Acoustic wave device, multiplexer, high-frequency front-end circuit, and communication apparatus

ABSTRACT

An acoustic wave device includes a silicon oxide film, a piezoelectric body made of lithium tantalate, and interdigital transducer electrodes stacked on a supporting substrate made of silicon, in which the values of the wave length-normalized film thickness and the Euler angle of the piezoelectric body made of lithium tantalate, the wave length-normalized film thickness of the silicon oxide film, the wave length-normalized film thickness of the interdigital transducer electrodes in terms of aluminum thickness, the propagation direction of the supporting substrate, and the wave length-normalized film thickness of the supporting substrate are set such that represented by Formula (1) for at least one of responses of first, second, and third higher-order modes is more than about −2.4, and T Si &gt;20.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of priority to Japanese Patent Application No. 2017-044689 filed on Mar. 9, 2017 and is a Continuation Application of PCT Application No. PCT/JP2018/008913 filed on Mar. 8, 2018. The entire contents of each application are hereby incorporated herein by reference.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to an acoustic wave device, a multiplexer, a high-frequency front-end circuit, and a communication apparatus including a piezoelectric body made of lithium tantalate that is stacked on or above a supporting substrate made of silicon.

2. Description of the Related Art

Multiplexers have been widely used in high-frequency front-end circuits of cellular phones and smartphones. For example, a multiplexer defining and functioning as a splitter described in Japanese Unexamined Patent Application Publication No. 2014-68123 includes two or more band pass filters for different frequencies. Each of the band pass filters is formed of a surface acoustic wave filter chip. The surface acoustic wave filter chip includes multiple surface acoustic wave resonators.

Japanese Unexamined Patent Application Publication No. 2010-187373 discloses an acoustic wave device in which an insulating film made of silicon dioxide and a piezoelectric substrate made of lithium tantalate are stacked on a supporting substrate made of silicon. The heat resistance is increased by bonding the support substrate and the insulating film on a silicon (111) surface.

In the multiplexer as described in Japanese Unexamined Patent Application Publication No. 2014-68123, multiple acoustic wave filters for different frequencies are commonly connected on an antenna terminal side.

The inventors of preferred embodiments of the present invention have discovered that in the case where a structure in which a piezoelectric body made of lithium tantalate is stacked directly or indirectly on a supporting substrate made of silicon is included, multiple higher-order modes appear at higher frequencies than a main mode used. In the case where such an acoustic wave resonator is used for an acoustic wave filter associated with a lower frequency in a multiplexer, ripples due to the higher-order modes of the acoustic wave filter may appear in the pass band of another acoustic wave filter associated with a higher frequency in the multiplexer. That is, when a higher-order mode of the acoustic wave filter associated with a lower frequency in the multiplexer is located in the pass band of another acoustic wave filter associated with a higher frequency in the multiplexer, ripples occur in the pass band. This deteriorates the filter characteristics of another acoustic wave filter.

SUMMARY OF THE INVENTION

Preferred embodiments of the present invention provide acoustic wave devices, multiplexers, high-frequency front-end circuits including multiplexers, and communication apparatus in which ripples due to a higher-order mode are less likely to occur in another acoustic wave filter.

The inventors of preferred embodiments of the present invention have discovered that, as described below, in an acoustic wave device including a piezoelectric body made of lithium tantalate stacked directly or indirectly on a supporting substrate made of silicon, first to third higher-order modes described below appear at higher frequencies than the main mode.

The acoustic wave devices according to preferred embodiments of the present invention reduce or prevent at least one higher-order mode among the first, second, and third higher-order modes.

An acoustic wave device according to a preferred embodiment of the present invention includes a supporting substrate made of silicon, a silicon oxide film stacked on the supporting substrate, a piezoelectric body stacked on the silicon oxide film, the piezoelectric body being made of lithium tantalate, and interdigital transducer electrodes disposed on a main surface of the piezoelectric body, in which a wave length determined by the pitch of electrode fingers of the interdigital transducer electrodes is denoted by λ, the wave length-normalized film thickness of the piezoelectric body is denoted by T_(LT), the Euler angle θ of the piezoelectric body is denoted by θ_(LT), the wave length-normalized film thickness of the silicon oxide film is denoted by T_(S), the wave length-normalized film thickness of the interdigital transducer electrodes of the interdigital transducer electrodes in terms of aluminum thickness is denoted by T_(E), a propagation direction in the supporting substrate is denoted by ψ_(Si), and the wave length-normalized film thickness of the supporting substrate is denoted by T_(Si), T_(LT), θ_(LT), T_(S), T_(E), and ψ_(Si) are set such that I_(h) represented by Formula (1) for at least one of responses of a first higher-order mode, a second higher-order mode, and a third higher-order mode is more than about −2.4, and T_(Si)>about 20.

$\begin{matrix} {I_{h} = {{a_{T_{LT}}^{(2)}\left( {\left( {T_{LT} - c_{T_{LT}}} \right)^{2} - b_{T_{LT}}^{(2)}} \right)} + {a_{T_{LT}}^{(1)}\left( {T_{LT} - c_{T_{LT}}} \right)} + {a_{T_{S}}^{(2)}\left( {\left( {T_{S} - c_{T_{S}}} \right)^{2} - b_{T_{LT}}^{(2)}} \right)} + {a_{T_{S}}^{(1)}\left( {T_{S} - c_{T_{S}}} \right)} + {a_{T_{E}}^{(4)}\left( {\left( {T_{E} - c_{T_{E}}} \right)^{4} - b_{T_{E}}^{(4)}} \right)} + {a_{T_{E}}^{(3)}\left( {\left( {T_{E} - c_{T_{E}}} \right)^{3} - b_{T_{E}}^{(3)}} \right)} + {a_{T_{E}}^{(2)}\left( {\left( {T_{E} - c_{T_{E}}} \right)^{2} - b_{T_{E}}^{(2)}} \right)} + {a_{T_{E}}^{(1)}\left( {T_{E} - c_{T_{E}}} \right)} + {a_{\psi_{Si}}^{(6)}\left( {\left( {\psi_{Si} - c_{\psi_{Si}}} \right)^{6} - b_{\psi_{Si}}^{(6)}} \right)} + {a_{\psi_{Si}}^{(5)}\left( {\left( {\psi_{Si} - c_{\psi_{Si}}} \right)^{2} - b_{\psi_{Si}}^{(5)}} \right)} + {a_{\psi_{Si}}^{(4)}\left( {\left( {\psi_{Si} - c_{\psi_{Si}}} \right)^{2} - b_{\psi_{Si}}^{(4)}} \right)} + {a_{\psi_{Si}}^{(3)}\left( {\left( {\psi_{Si} - c_{\psi_{Si}}} \right)^{2} - b_{\psi_{Si}}^{(3)}} \right)} + {a_{\psi_{Si}}^{(2)}\left( {\left( {\psi_{Si} - c_{\psi_{Si}}} \right)^{2} - b_{\psi_{Si}}^{(2)}} \right)} - {a_{\psi_{Si}}^{(1)}\left( {\psi_{Si} - c_{\psi_{Si}}} \right)} + {a_{\theta_{LT}}^{(2)}\left( {\left( {\theta_{LT} - c_{\theta_{LT}}} \right)^{2} - b_{\theta_{LT}}^{(2)}} \right)} + {a_{\theta_{LT}}^{(1)}\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {{d_{T_{LT}T_{S}}\left( {T_{LT} - c_{T_{LT}}} \right)}\left( {T_{S} - c_{T_{S}}} \right)} + {{d_{T_{LT}T_{E}}\left( {T_{LT} - c_{T_{LT}}} \right)}\left( {T_{E} - c_{T_{E}}} \right)} + {{d_{T_{LT}\psi_{Si}}\left( {T_{LT} - c_{T_{LT}}} \right)}\left( {\psi_{Si} - c_{\psi_{Si}}} \right)} + {{d_{T_{LT}\theta_{LT}}\left( {T_{LT} - c_{T_{LT}}} \right)}\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {{d_{T_{S}T_{E}}\left( {T_{S} - c_{T_{S}}} \right)}\left( {T_{E} - c_{T_{E}}} \right)} + {{d_{T_{S}\psi_{Si}}\left( {T_{S} - c_{T_{S}}} \right)}\left( {\psi_{Si} - c_{\psi_{Si}}} \right)} + {{d_{T_{S}\theta_{LT}}\left( {T_{S} - c_{T_{S}}} \right)}\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {{d_{T_{E}\psi_{Si}}\left( {T_{E} - c_{T_{E}}} \right)}\left( {\psi_{Si} - c_{\psi_{Si}}} \right)} + {{d_{T_{E}\theta_{LT}}\left( {T_{E} - c_{T_{E}}} \right)}\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {{d_{\psi_{Si}\theta_{LT}}\left( {\psi_{Si} - c_{\psi_{Si}}} \right)}\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + e}} & {{Formula}\mspace{14mu} (1)} \end{matrix}$

Coefficients a, b, c, d, and e in Formula (1) are values presented in Tables 1 to 36 below in accordance with ranges of orientation of the supporting substrate either of (100), (110), or (111), the type of higher-order mode, the wave length-normalized film thickness of the silicon oxide film, the wave length-normalized film thickness of the piezoelectric body, and the propagation direction in the supporting substrate. In the case where the orientation of the supporting substrate is (100), ψ_(Si) is the angle between the propagation direction of an acoustic wave when viewed from the main surface side of the piezoelectric body on which the interdigital transducer electrodes are disposed and the Miller indices of silicon represented by a crystal direction of [100] when viewed from the above-written main surface side. In the case where the orientation of the supporting substrate is (110), ψ_(Si) is the angle between the propagation direction of an acoustic wave when viewed from the main surface side of the piezoelectric body on which the interdigital transducer electrodes are disposed and Miller indices of the silicon represented by crystal direction of [1-10] when viewed from the above-written main surface side. In the case where the orientation of the supporting substrate is (111), ψ_(Si) is the angle between the propagation direction of an acoustic wave when viewed from the main surface side of the piezoelectric body on which the interdigital transducer electrodes are disposed and Miller indices of the silicon represented by crystal direction of [1-10] when viewed from the above-written main surface side.

TABLE 1 Si(100) First higher-order mode 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ 0 0 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0 0 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −5.857231176 −5.857231176 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.148 0.148 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ −19.75255913 −19.75255913 a_(TE) ⁽¹⁾ −2.877583447 −2.877583447 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0.022736 0.022736 c_(TE) 0.242 0.242 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ 0.004788767 0.004788767 a_(ψSi) ⁽¹⁾ 0.024306207 0.024306207 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 81.81 81.81 c_(ψSi) 8.7 8.7 a_(θLT) ⁽²⁾ −0.008235936 −0.008235936 a_(θLT) ⁽¹⁾ −0.021048278 −0.021048278 b_(θLT) ⁽²⁾ 65.16 65.16 c_(θLT) −52.2 −52.2 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) 0 0 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) −0.786852571 −0.786852571 d_(TEψSi) 0 0 d_(TEθLT) −0.237034335 −0.237034335 d_(ψSiθLT) 0 0 e −1.499248378 −1.499248378

TABLE 2 Si(100) First higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 125.5342427 a_(TLT) ⁽¹⁾ −13.43961051 −7.643409732 b_(TLT) ⁽²⁾ 0 0.006076558 c_(TLT) 0.329807692 0.321186441 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −11.80744788 −10.05306878 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.158653846 0.153389831 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 0 0 a_(TE) ⁽¹⁾ 0 −7.595099843 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0 0 c_(TE) 0 0.366101695 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ 0.003335792 0 a_(ψSi) ⁽¹⁾ 0.039268266 −0.013700762 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 191.7159763 0 c_(ψSi) 13.26923077 16.01694915 a_(θLT) ⁽²⁾ −0.007476194 0 a_(θLT) ⁽¹⁾ −0.010867175 −0.053997369 b_(θLT) ⁽²⁾ 69.19378698 0 c_(θLT) −50.19230769 −50.59322034 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) −0.629167148 −0.724576033 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) 0 0.521919406 d_(TSθLT) 0 0 d_(TEψSi) 0 −0.523966449 d_(TEθLT) 0 0 d_(ψSiθLT) 0 0 e −2.071831837 −3.228508418

TABLE 3 Si(100) First higher-order mode 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −15.6141248 −15.6141248 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.163309353 0.163309353 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −22.02440893 −22.02440893 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.325179856 0.325179856 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ −248.4374004 −248.4374004 a_(TE) ⁽²⁾ −36.57127964 −36.57127964 a_(TE) ⁽¹⁾ 13.88180854 13.88180854 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0.000480119 0.000480119 b_(TE) ⁽²⁾ 0.020416128 0.020416128 c_(TE) 0.240647482 0.240647482 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ 0.002456326 0.002456326 a_(ψSi) ⁽¹⁾ 0.043553126 0.048553126 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 279.6050929 279.6050929 c_(ψSi) 22.3381295 22.3381295 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.005427275 0.005427275 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −50.35971223 −50.35971223 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) 0 0 d_(TLTθLT) 0 0 d_(TSTE) 41.63149071 41.63149071 d_(TSψSi) −0.577179204 −0.577179204 d_(TSθLT) 0.603866778 0.603866778 d_(TEψSi) 0.134944598 0.134944598 d_(TEθLT) 0 0 d_(ψSiθLT) 0 0 e −2.703317679 −2.703317679

TABLE 4 Si(100) First higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 133.7896555 a_(TLT) ⁽¹⁾ −7.761727985 −9.701155851 b_(TLT) ⁽²⁾ 0 0.006281971 c_(TLT) 0.315508021 0.306914894 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −20.35135077 −6.186650236 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.297860963 0.298404255 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 110.8304316 0 a_(TE) ⁽¹⁾ 4.036561723 −8.229960495 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0.006431411 0 c_(TE) 0.140374332 0.363297872 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ 0.002534654 0.001652947 a_(ψSi) ⁽¹⁾ 0.024168138 −0.003241344 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 269.2484772 266.6845858 c_(ψSi) 21.4171123 20.26595745 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0 −0.066116428 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −90 −50.4787234 d_(TLTTS) 96.23533718 0 d_(TLTTE) −66.46866878 0 d_(TLTψSi) −0.404808481 −0.688053172 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) −0.733337318 0 d_(TSθLT) 0 0 d_(TEψSi) 0.584322518 −0.372994212 d_(TEθLT) 0 0 d_(ψSiθLT) 0 0 e −3.679364607 −4.30794513

TABLE 5 Si(100) Second higher-order mode 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −5.687707928 −5.687707928 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.139506173 0.139506173 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ 5.653643283 5.653643283 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.148148148 0.148148148 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 0 0 a_(TE) ⁽¹⁾ −1.004369706 −1.004369706 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0 0 c_(TE) 0.255555556 0.255555556 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ −0.000197083 −0.000197083 a_(ψSi) ⁽²⁾ −0.003376583 −0.003376583 a_(ψSi) ⁽¹⁾ 0.118081927 0.118081927 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ −379.4708632 −379.4708632 b_(ψSi) ⁽²⁾ 278.0521262 278.0521262 c_(ψSi) 23.14814815 23.14814815 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.128631041 0.128631041 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −49.32098765 −49.32098765 d_(TLTTS) 0 0 d_(TLTTE) 72.43278274 72.43278274 d_(TLTψSi) 0.604747502 0.604747502 d_(TLTθLT) −1.743618251 −1.743618251 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) 0.994157261 0.994157261 d_(TEψSi) 0 0 d_(TEθLT) 0.280889881 0.280889881 d_(ψSiθLT) 0.003095822 0.003095822 e −5.638096455 −5.638096455

TABLE 6 Si(100) Second higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ 7.809960834 4.249755245 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.30962963 0.302857143 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ 0 −0.800874586 b_(TS) ⁽²⁾ 0 0 c_(TS) 0 0.150714286 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 0 0 a_(TE) ⁽¹⁾ −3.563479635 9.07053135 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0 0 c_(TE) 0.148518519 0.353571429 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ −0.000160979 0 a_(ψSi) ⁽²⁾ −0.000757552 0.001332545 a_(ψSi) ⁽¹⁾ 0.095765615 0.003836714 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 384.7407407 0 b_(ψSi) ⁽²⁾ 278.2222222 285.0956633 c_(ψSi) 21.33333333 20.89285714 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.043185248 0.033521037 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −50 −50.92857143 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) −0.383208698 −0.220029295 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) 0 0.974673109 d_(TEψSi) 0 0 d_(TEθLT) 1.01389349 −1.078939399 d_(ψSiθLT) 0 0.002899732 e −5.569590226 −5.29442278

TABLE 7 Si(100) Second higher-order mode 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −11.51287 −11.51287 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.136328125 0.136328125 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ 6.022608826 6.022608826 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.305859375 0.305859375 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ −180.607873 −180.607873 a_(TE) ⁽²⁾ −1.347493816 −1.347493816 a_(TE) ⁽¹⁾ 4.841204365 4.841204365 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ −0.000227051 −0.000227051 b_(TE) ⁽²⁾ 0.019179688 0.019179688 c_(TE) 0.25625 0.25625 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ −0.001342794 −0.001342794 a_(ψSi) ⁽¹⁾ 0.25625 0.25625 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 275.7568359 275.7568359 c_(ψSi) 0.25625 0.25625 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.153688205 0.153688205 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −49.140625 −49.140625 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) 0 0 d_(TLTθLT) −1.180623763 −1.180623763 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) 0 0 d_(TEψSi) 0 0 d_(TEθLT) 0.41394071 0.41394071 d_(ψSiθLT) 0.003203013 0.003203013 e −4.433641408 −4.433641408

TABLE 8 Si(100) Second higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 119.666412 118.2359738 a_(TLT) ⁽¹⁾ 4.447768142 2.271979446 b_(TLT) ⁽²⁾ 0.006371047 0.00699901 c_(TLT) 0.31147541 0.30631068 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ 0 −3.805216895 b_(TS) ⁽²⁾ 0 0 c_(TS) 0 0.298543689 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 117.8354557 121.7109482 a_(TE) ⁽¹⁾ 2.107193686 −0.578851453 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0.006775956 0.006610661 c_(TE) 0.15 035631068 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ −0.001658706 0 a_(ψSi) ⁽¹⁾ 0.005677734 0.003834195 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 272.5477022 0 c_(ψSi) 20.90163934 20.02427184 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.051921544 0.050011808 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −48.36065574 −48.93203883 d_(TLTTS) 0 0 d_(TLTTE) 61.26575286 0 d_(TLTψSi) 0 0 d_(TLTθLT) 0 0 d_(TSTE) 0 −82.22932804 d_(TSψSi) 0 0 d_(TSθLT) 0 −0.470524678 d_(TEψSi) 0 0 d_(TEθLT) 0.904198722 −0.776132158 d_(ψSiθLT) 0.003410501 0.003906326 e −5.339814906 −5.463687811

TABLE 9 Si(100) Third higher-order mode 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −16.39135605 −16.39135605 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.196774194 0.196774194 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −4.824831305 −4.824831305 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.170967742 0.170967742 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ −45.57608817 −45.57608817 a_(TE) ⁽¹⁾ −10.80005563 −10.80005563 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0.018296046 0.018296046 c_(TE) 0.303225806 0.303225806 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0.000172048 0.000172048 a_(ψSi) ⁽²⁾ −0.00384923 −0.00384923 a_(ψSi) ⁽¹⁾ −0.009826773 −0.009826773 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 143.0843208 143.0843208 b_(ψSi) ⁽²⁾ 215.8688866 215.8688866 c_(ψSi) 22.25806452 22.25806452 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.066799879 0.066799879 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −50.16129032 −50.16129032 d_(TLTTS) 0 0 d_(TLTTE) −112.847682 −112.847682 d_(TLTψSi) 0 0 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) −1.750763196 −1.750763196 d_(TSθLT) 0 0 d_(TEψSi) 0 0 d_(TEθLT) 0.466692151 0.466692151 d_(ψSiθLT) 0 0 e −2.904746788 −2.904746788

TABLE 10 Si(100) Third higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −8.135537689 −8.135537689 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.311659193 0.311659193 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −20.38200282 −20.38200282 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.149327354 0.149327354 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 0 0 a_(TE) ⁽¹⁾ −3.460675692 −3.460675692 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0 0 c_(TE) 0.267488789 0.267488789 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ −0.003759233 −0.003759233 a_(ψSi) ⁽¹⁾ 0.015931998 0.015931998 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 239.0395946 239.0395946 c_(ψSi) 18.90134529 18.90134529 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.017576249 0.017576249 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −49.9103139 −49.9103139 d_(TLTTS) −152.1817236 −152.1817236 d_(TLTTE) 0 0 d_(TLTψSi) −0.359387178 −0.359387178 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) 0.911415415 0.911415415 d_(TEψSi) 0 0 d_(TEθLT) 0.275815872 0.275815872 d_(ψSiθLT) 0 0 e −3.952626598 −3.952626598

TABLE 11 Si(100) Third higher-order mode 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −26.36951471 −26.36951471 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.161538462 0.161538462 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −10.09828536 −10.09828536 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.321025641 0.321025641 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ −21.38297597 −21.38297597 a_(TE) ⁽¹⁾ −2.383287449 −2.383287449 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0.01947666 0.01947666 c_(TE) 0.270512821 0.270512821 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0.000176024 0.000176024 a_(ψSi) ⁽²⁾ −0.001397911 −0.001397911 a_(ψSi) ⁽¹⁾ −0.107515297 −0.107515297 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ −282.3623122 −282.3623122 b_(ψSi) ⁽²⁾ 255.2071006 255.2071006 c_(ψSi) 23.84615385 23.84615385 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.085112984 0.085112984 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −48.97435897 −48.97435897 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) −0.816828716 −0.816828716 d_(TLTθLT) 0.865519967 0.865519967 d_(TSTE) 0 0 d_(TSψSi) −0.538336559 −0.538336559 d_(TSθLT) 0 0 d_(TEψSi) 0 0 d_(TEθLT) 0 0 d_(ψSiθLT) 0.002971652 0.002971652 e −3.504362202 −3.504362202

TABLE 12 Si(100) Third higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −6.371850196 −6.371850196 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.292192192 0.292192192 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −0.609606885 −0.609606885 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.2996997 0.2996997 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 0 0 a_(TE) ⁽¹⁾ 0 0 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0 0 c_(TE) 0 0 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0.000224133 0.000224133 a_(ψSi) ⁽²⁾ −0.004048532 −0.004048532 a_(ψSi) ⁽¹⁾ −0.126847922 −0.126847922 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 1375.85979 1375.85979 b_(ψSi) ⁽²⁾ 281.2555799 281.2555799 c_(ψSi) 19.77477477 19.77477477 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.056146223 0.056146223 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −49.48948949 −49.48948949 d_(TLTTS) 94.47145497 94.47145497 d_(TLTTE) 0 0 d_(TLTψSi) 0 0 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) −0.568942451 −0.568942451 d_(TEψSi) 0 0 d_(TEθLT) 0 0 d_(ψSiθLT) 0.005654813 0.005654813 e −4.940340284 −4.940340284

TABLE 13 Si(110) First higher-order mode 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −16.69742899 −16.69742899 −33.56520202 0 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.1675 0.1675 0.192857143 0 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 15.90196012 15.90196012 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.1525 0.1525 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 26.3030303 0 a_(TE) ⁽¹⁾ 0 0 −6.181053391 0 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0.006326531 0 c_(TE) 0 0 0.378571429 0 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ −0.000183963 −0.000183963 0 −0.000177142 a_(ψSi) ⁽²⁾ −0.003236307 −0.003236307 0 0.002186084 a_(ψSi) ⁽¹⁾ 0.071460688 0.071460688 0.085067773 0.13561432 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ −5768.71875 −5768.71875 0 2642.857143 b_(ψSi) ⁽²⁾ 399.9375 399.9375 0 500 c_(ψSi) 65.25 65.25 34.28571429 55 a_(θLT) ⁽²⁾ 0 0 0 −0.005336622 a_(θLT) ⁽¹⁾ 0 0 0.070255628 0.032718563 b_(θLT) ⁽²⁾ 0 0 0 65.75963719 c_(θLT) −90 −90 −51.42857143 −50.95238095 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 1.873870705 1.873870705 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0.716151515 0 d_(ψSiθLT) 0 0 −0.00729303 0.002110378 e −0.957101918 −0.957101918 −1.634922542 −1.290881853

TABLE 14 Si(110) First higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −23.96596978 −4.695531045 −7.344438725 −5.603099398 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.34 0.3296875 0.338983051 0.306666667 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −23.18485905 0 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.175555556 0 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 −43.48595551 −70.50554427 −41.95412638 a_(TE) ⁽¹⁾ 0 −2.467954545 −5.460437635 −2.19025056 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0.006875 0.006716461 0.006819556 c_(TE) 0 0.15 0.365254237 0.360666667 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0.000119479 −0.000172812 a_(ψSi) ⁽²⁾ 0.018474062 0 0.003987724 0.002213009 a_(ψSi) ⁽¹⁾ 0.059131688 0 −0.047908658 0.073831446 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 −2384.203107 1647.952 b_(ψSi) ⁽²⁾ 81.55555556 0 216.791152 242.24 c_(ψSi) 35.33333333 0 30.76271186 62.6 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.009475371 0 0.026725166 0 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.33333333 −90 −49.83050847 −90 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 42.3018696 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0.617240199 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 2.612107038 0 0 0 d_(TSθLT) 2.129359248 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0.871101002 0 0 0 e −2.851861362 −2.210765625 −2.573237288 −2.440604203

TABLE 15 Si(110) First higher-order mode 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −10.87353735 −17.74612134 −16.74814911 −16.74814911 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.167045455 0.158227848 0.168032787 0.168032787 a_(TS) ⁽²⁾ 92.14417413 275.6432031 0 0 a_(TS) ⁽¹⁾ −6.141913324 −0.713377524 −9.071522271 −9.071522271 b_(TS) ⁽²⁾ 0.004213585 0.004749239 0 0 c_(TS) 0.339772727 0.317721519 0.314754098 0.314754098 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ −37.82699975 0 0 0 a_(TE) ⁽¹⁾ 4.315324766 3.259148162 −5.270739047 −5.270739047 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.007147469 0 0 0 c_(TE) 0.153409091 0.138607595 0.356557377 0.356557377 a_(ψSi) ⁽⁶⁾ 0 0 −3.73552E−09 −3.73552E−09 a_(ψSi) ⁽⁵⁾ 0 0 −4.69013E−08 −4.69013E−08 a_(ψSi) ⁽⁴⁾ 0 0 1.07773E−05 1.07773E−05 a_(ψSi) ⁽³⁾ 0.000254041 −0.000266841 5.64997E−05 5.64997E−05 a_(ψSi) ⁽²⁾ 0.00704637 0.003350583 −0.007526984 −0.007526984 a_(ψSi) ⁽¹⁾ −0.123432463 0.05687546 −0.035719404 −0.035719404 b_(ψSi) ⁽⁶⁾ 0 0 1801696668 1801696668 b_(ψSi) ⁽⁵⁾ 0 0 6726299.443 6726299.443 b_(ψSi) ⁽⁴⁾ 0 0 1035415.498 1035415.498 b_(ψSi) ⁽³⁾ −1197.310014 2539.305207 3573.665857 3573.665857 b_(ψSi) ⁽²⁾ 188.2457386 286.0358917 720.1088417 720.1088417 c_(ψSi) 28.125 63.60759494 48.19672131 48.19672131 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.046748629 0.00460971 0 0 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −51.59090909 −50.75949367 −90 −90 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 105.3055279 0 0 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 58.63016883 0 0 0 d_(TSψSi) 0.443510572 0.274149566 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0.293912516 −0.280924747 0 0 d_(TEθLT) 0 0.457718571 0 0 d_(ψSiθLT) 0 −0.005165328 0 0 e −1.722804167 −2.484892701 −2.976959016 −2.976959016

TABLE 16 Si(110) First higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 39.48011293 a_(TLT) ⁽¹⁾ −5.239160454 −5.820942031 −4.867344296 −2.496300587 b_(TLT) ⁽²⁾ 0 0 0 0.00654321 c_(TLT) 0.309375 0.302702703 0.286363636 0.288888889 a_(TS) ⁽²⁾ 24.40391167 40.38499201 0 40.45660337 a_(TS) ⁽¹⁾ −2.128595361 −6.73354721 −3.626479228 −6.290401812 b_(TS) ⁽²⁾ 0.006013184 0.005624543 0 0.005617284 c_(TS) 0.3265625 0.275675676 0.31 0.272222222 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 −51.46488975 0 0 a_(TE) ⁽¹⁾ −1.921891837 −0.509929613 −1.508039016 −0.870147512 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0.006479182 0 0 c_(TE) 0.153125 0.147297297 0.341818182 0.351388889 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 −0.000165117 0 −9.55404E−05 a_(ψSi) ⁽²⁾ 0.000936051 0.00475603 0 0.002198207 a_(ψSi) ⁽¹⁾ −0.02141106 0.040196571 −0.017752634 0.036260775 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 2115.829763 0 1531.394676 b_(ψSi) ⁽²⁾ 246.9177246 196.5668371 0 199.8263889 c_(ψSi) 24.140625 57.97297297 21.13636364 60.41666667 a_(θLT) ⁽²⁾ 0 0 0 −0.003220943 a_(θLT) ⁽¹⁾ 0.023743346 0.023741003 0.038368027 0.005042496 b_(θLT) ⁽²⁾ 0 0 0 72.22222222 c_(θLT) −50.078125 −48.51351351 −50.81818182 −50 d_(TLTTS) 0 0 0 −43.45862557 d_(TLTTE) −35.16960363 −48.00382984 23.6423037 52.46703277 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0.234382842 0 0 −0.273892853 d_(ψSiθLT) 0 −0.00130658 −0.001221935 0 e −2.175330984 −2.239116787 −2.271294054 −2.496300587

TABLE 17 Si(110) Second higher-order mode 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −7.587457615 −7.587457615 −7.587457615 −7.587457615 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.174380165 0.174380165 0.174380165 0.174380165 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −3.979714537 −3.979714537 −3.979714537 −3.979714537 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.150413223 0.150413223 0.150413223 0.150413223 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ −0.865040993 −0.865040993 −0.865040993 −0.865040993 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.245867769 0.245867769 0.245867769 0.245867769 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 5.87537E−07 5.87537E−07 5.87537E−07 5.87537E−07 a_(ψSi) ⁽³⁾ −8.59015E−07 −8.59015E−07 −8.59015E−07 −8.59015E−07 a_(ψSi) ⁽²⁾ −0.001948222 −0.001948222 −0.001948222 −0.001948222 a_(ψSi) ⁽¹⁾ −0.027558032 −0.027558032 −0.027558032 −0.027558032 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 1129197.497 1129197.497 1129197.497 1129197.497 b_(ψSi) ⁽³⁾ −1524.372996 −1524.372996 −1524.372996 −1524.372996 b_(ψSi) ⁽²⁾ 776.3813947 776.3843947 776.3813947 776.3813947 c_(ψSi) 41.52892562 41.52892562 41.52892562 41.52892562 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.018744549 0.018744549 0.018744549 0.018744549 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.25619835 −49.25619835 −49.25619835 −49.25619835 d_(TLTTS) 140.6234074 140.6234074 140.6234074 140.6234074 d_(TLTTE) −25.20654793 −25.20654793 −25.20654793 −25.20654793 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0 0 0 e −1.789519626 −1.789519626 −1.789519626 −1.789519626

TABLE 18 Si(110) Second higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 39.68139696 39.68139696 a_(TLT) ⁽¹⁾ −3.912934705 −3.912934705 −3.801935963 −3.801935963 b_(TLT) ⁽²⁾ 0 0 0.00692398 0.00692398 c_(TLT) 0.306451613 0.306451613 0.297857143 0.297857143 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0 0 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0 0 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ 1.912614784 1.912614784 −6.089810932 −6.089810932 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.148924731 0.148924731 0.347857143 0.347857143 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 8.78847E−06 8.78847E−06 a_(ψSi) ⁽²⁾ −0.0004718 −0.0004718 −0.000160567 −0.000160567 a_(ψSi) ⁽¹⁾ 0.003265633 0.003265633 −0.023574651 −0.023574651 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 2351.597668 2351.597668 b_(ψSi) ⁽²⁾ 847.4765869 847.4765869 880.2091837 880.2091837 c_(ψSi) 35.32258065 35.32258065 43.07142857 43.07142857 a_(θLT) ⁽²⁾ 0.005014741 0.005014741 0 0 a_(θLT) ⁽¹⁾ 0.023115164 0.023115164 0.030121011 0.030121011 b_(θLT) ⁽²⁾ 67.0626662 67.0626662 0 0 c_(θLT) −49.62365591 −49.62365591 −51.28571429 −51.28571429 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0 0 0.125572529 0.125572529 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0.563162206 0.563162206 −0.417002414 −0.417002414 d_(ψSiθLT) 0 0 0 0 e −2.002512986 −2.002512986 −2.550158637 −2.550158637

TABLE 19 Si(110) Second higher-order mode 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ 2.992014692 2.992014692 −1.461725087 −1.461725087 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.156390977 0.156390977 0.155345912 0.155345912 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −9.089925228 −9.089925228 −1.247751383 −1.247751383 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.305263158 0.305263158 0.327672956 0.327672956 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 −130.6388144 −130.6388144 a_(TE) ⁽¹⁾ 5.773590917 5.773590917 −0.010504162 −0.010504162 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0.006662711 0.006662711 c_(TE) 0.166541353 0.166541353 0.341823899 0.341823899 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 1.03604E−05 1.03604E−05 a_(ψSi) ⁽²⁾ −0.000377109 −0.000377109 −0.000138558 −0.000138558 a_(ψSi) ⁽¹⁾ −0.013702515 −0.013702515 −0.028102653 −0.028102653 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 3096.349671 3096.349671 b_(ψSi) ⁽²⁾ 792.2381141 792.2381141 957.6361695 957.6361695 c_(ψSi) 41.39097744 41.39097744 43.20754717 43.20754717 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.015804666 0.015804666 0.028892246 0.028892246 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.32330827 −49.32330827 −49.62264151 −49.62264151 d_(TLTTS) 0 0 −44.5976835 −44.5976835 d_(TLTTE) 80.90186655 80.90186655 −150.2428298 −150.2428298 d_(TLTψSi) 0 0 0.225109644 0.225109644 d_(TLTθLT) 0 0 0 0 d_(TSTE) 29.68261053 29.68261053 47.35851038 47.35851038 d_(TSψSi) 0.136750854 0.136750854 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) −0.146211814 −0.146211814 0 0 d_(TEθLT) 0.41229257 0.41229257 0 0 d_(ψSiθLT) 0 0 0 0 e −2.596813807 −2.596813807 −2.049341112 −2.049341112

TABLE 20 Si(110) Second higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −2.80791074 −2.80791074 0 0 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.3069869 0.3069869 0 0 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −5.618098986 −5.618098986 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.286462882 0.286462882 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 −73.23839461 −73.23839461 a_(TE) ⁽¹⁾ 8.962154821 8.962154821 −5.710295136 −5.710295136 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0.007310763 0.007310763 c_(TE) 0.167467249 0.167467249 0.330930233 0.330930233 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0 a_(ψSi) ⁽¹⁾ 0.003677309 0.003677309 0 0 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 0 c_(ψSi) 40.93886463 40.93886463 0 0 a_(θLT) ⁽²⁾ 0.00527863 0.00527863 0 0 a_(θLT) ⁽¹⁾ 0.008431458 0.008431458 0 0 b_(θLT) ⁽²⁾ 66.00179249 66.00179249 0 0 c_(θLT) −50.61135371 −50.61135371 −90 −90 d_(TLTTS) 63.6265441 63.6265441 0 0 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 57.20229582 57.20229582 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) −0.098212695 −0.098212695 0 0 d_(TEθLT) 0.32576925 0.32576925 0 0 d_(ψSiθLT) 0 0 0 0 e −2.431352404 −2.431352404 −2.39032093 −2.39032093

TABLE 21 Si(110) Third higher-order mode 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −11.04825287 −11.04825287 −11.04825287 −11.04825287 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.164705882 0.164705882 0.164705882 0.164705882 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0 0 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0 0 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ −12.86806521 −12.86806521 −12.86806521 −12.86806521 a_(TE) ⁽¹⁾ 39.88235294 39.88235294 39.88235294 39.88235294 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.019258131 0.019258131 0.019258131 0.019258131 c_(TE) 0.286470588 0.286470588 0.286470588 0.286470588 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ −0.000762445 −0.000762445 −0.000762445 −0.000762445 a_(ψSi) ⁽¹⁾ −0.031584918 −0.031584918 −0.031584918 −0.031584918 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 749.7716263 749.7716263 749.7716263 749.7716263 c_(ψSi) 52.58823529 52.58823529 52.58823529 52.58823529 a_(θLT) ⁽²⁾ −0.004115091 −0.004115091 −0.004115091 −0.004115091 a_(θLT) ⁽¹⁾ 0.023260981 0.023260981 0.023260981 0.023260981 b_(θLT) ⁽²⁾ 81.16252976 81.16262976 81.16262976 81.16262976 c_(θLT) −50.11764706 −50.11764706 −50.11764706 −50.11764706 d_(TLTTS) 0 0 0 0 d_(TLTTE) −32.35244505 −32.35244505 −32.35244505 −32.35244505 d_(TLTψSi) 0.348515389 0.348515389 0.348515389 0.348515389 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0.000823202 0.000823202 0.000823202 0.000823202 e −1.678155024 −1.678155024 −1.678155024 −1.678155024

TABLE 22 Si(110) Third higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 34.01092867 34.01092867 a_(TLT) ⁽¹⁾ −3.294448859 −3.294448859 −2.996122319 −2.996122319 b_(TLT) ⁽²⁾ 0 0 0.005572031 0.005572031 c_(TLT) 0.328378378 0.328378378 0.31344086 0.31344086 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 2.752851676 2.752851676 −1.564359965 −1.564359965 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.162837838 0.162837838 0.160752688 0.160752688 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ −4.548790211 −4.548790211 −1.370514553 −1.370514553 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.165540541 0.165540541 0.355913978 0.355913978 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ −7.03888E−08 −7.03888E−08 −3.78178E−08 −3.78178E−08 a_(ψSi) ⁽⁴⁾   1.4265E−06   1.4265E−06 9.79065E−07 9.79065E−07 a_(ψSi) ⁽³⁾ 0.000180358 0.000180358 9.73597E−05 9.73597E−05 a_(ψSi) ⁽²⁾ −0.002681874 −0.002681874 −0.00192926 −0.00192926 a_(ψSi) ⁽¹⁾ −0.092266284 −0.092266284 −0.04329175 −0.04329175 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 11701030.08 11701030.08 24265475.25 24265475.25 b_(ψSi) ⁽⁴⁾ 1439156.296 1439156.296 1705613.393 1705613.393 b_(ψSi) ⁽³⁾ 1798.436559 1798.436559 6938.899332 6938.899332 b_(ψSi) ⁽²⁾ 930.5183985 930.5183985 1060.880593 1060.880593 c_(ψSi) 40.23648649 40.23648649 40.08064516 40.08064516 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.046000242 0.046000242 0.001380272 0.001380272 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.52702703 −49.52702703 −50.05376344 −50.05376344 d_(TLTTS) −136.9978702 −136.9978702 −73.06084164 −73.06084164 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0 0 0.096651605 0.096651605 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 −56.78924979 −56.78924979 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0.081014811 0.081014811 0 0 d_(TEθLT) 0 0 −0.194432704 −0.194432704 d_(ψSiθLT) 0 0 0.000875955 0.000875955 e −2.543790382 −2.543790382 −2.964933907 −2.964933907

TABLE 23 Si(110) Third higher-order mode 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −13.1565646 −13.1565646 −13.1565646 −13.1565646 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.179661017 0.179661017 0.179661017 0.179661017 a_(TS) ⁽²⁾ −54.97015257 −54.97015257 −54.97015257 −54.97015257 a_(TS) ⁽¹⁾ 1.195559996 1.195559996 1.195559996 1.195559996 b_(TS) ⁽²⁾ 0.006496856 0.006496856 0.006496856 0.006496856 c_(TS) 0.299435028 0.299435028 0.299435028 0.299435028 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ −12.83875925 −12.83875925 −12.83875925 −12.83875925 a_(TE) ⁽¹⁾ −2.591177902 −2.591177902 −2.591177902 −2.591177902 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.02062115 0.02062115 0.02062115 0.02062115 c_(TE) 0.282768362 0.282768362 0.282768362 0.282768362 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ −0.00094978 −0.00094978 −0.00094978 −0.00094978 a_(ψSi) ⁽¹⁾ −0.016861509 −0.016861509 −0.016861509 −0.016861509 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ −0.00094978 −0.00094978 −0.00094978 −0.00094978 c_(ψSi) 44.83050847 44.83050847 44.83050847 44.83050847 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.020120147 0.020120147 0.020120147 0.020120147 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −50.50847458 −50.50847458 −50.50847458 −50.50847458 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0.250474306 0.250474306 0.250474306 0.250474306 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0.031071552 0.031071552 0.031071552 0.031071552 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0 0 0 e −1.687640015 −1.687640015 −1.687640015 −1.687640015

TABLE 24 Si(110) Third higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −8.387315737 −8.387315737 −11.34973266 −6.017883428 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.313377926 0.313377926 0.291082803 0.294578313 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0.140898252 0.140898252 3.107378473 2.287606243 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.299331104 0.299331104 0.277707006 0.296385542 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ −1.209727849 −1.209727849 −4.259242642 −1.280235687 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.152006689 0.152006689 0.343630573 0.351204819 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ −2.33027E−08 −2.33027E−08 0 0 a_(ψSi) ⁽⁴⁾ 7.78115E−07 7.78115E−07 0 0 a_(ψSi) ⁽³⁾ 5.59108E−05 5.59108E−05 −0.000194818 0 a_(ψSi) ⁽²⁾ −0.002410767 −0.002410767 0.000247924 0 a_(ψSi) ⁽¹⁾ −0.027662563 −0.027662563 0.12904143 −0.026766472 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 2083705.649 2083705.649 0 0 b_(ψSi) ⁽⁴⁾ 1386257.115 1386257.115 0 0 b_(ψSi) ⁽³⁾ −1267.413434 −1267.413434 1811.750092 0 b_(ψSi) ⁽²⁾ 895.5856198 895.5856198 293.105197 0 c_(ψSi) 42.14046823 42.14046823 19.39490446 67.95180723 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.020067585 0.020067585 −0.011988832 0.032566601 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.73244147 −49.73244147 −49.61783439 −50.96385542 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 41.29194486 d_(TLTψSi) 0 0 −0.203585177 0.376861254 d_(TLTθLT) 0 0 −0.273779971 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 −0.20937463 d_(TSθLT) −0.349110894 −0.349110894 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) −0.216865482 −0.216865482 0 0 d_(ψSiθLT) 0 0 0.00120304 0 e −2.390757235 −2.390757235 −2.548464154 −2.523994879

TABLE 25 Si(111) First higher-order mode 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ 16.07631847 20.22733656 30.72650306 27.83979251 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.145833333 0.1625 0.159574468 0.158695652 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 17.08812597 27.84866827 31.28009383 12.67453621 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.154166667 0.172916667 0.161702128 0.163043478 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ −96.15629371 0 138.3065683 0 a_(TE) ⁽¹⁾ −1.263589744 2.883915191 −9.345807167 −7.807789594 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.006649306 0 0.006229063 0 c_(TE) 0.170833333 0.14375 0.369148936 0.345652174 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 −0.006862727 a_(ψSi) ⁽¹⁾ −0.101535567 −0.012511908 −0.101466433 0.176438509 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 114.9456522 c_(ψSi) 24.375 44.375 22.0212766 37.5 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0 0 0 0 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −90 −90 −90 −90 d_(TLTTS) −477.9162005 −760.9473336 −1054.386561 −1044.340968 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0 1.332405924 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 −250.1524613 102.33575 105.8611165 d_(TSψSi) 0 0 0 −2.093429604 d_(TSθLT) 0 0 0 0 d_(TEψSi) −0.613440559 0 1.201832187 −0.525734733 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0 0 0 e −0.55329028 −1.074792989 −1.290770348 −1.165057152

TABLE 26 Si(111) First higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ −262.3995984 −262.3995984 0 0 a_(TLT) ⁽¹⁾ −59.70400634 −59.70400634 −18.45032018 −20.44479246 b_(TLT) ⁽²⁾ 0.004691358 0.004691358 0 0 c_(TLT) 0.355555556 0.355555556 0.332352941 0.331914894 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −73.33869606 −73.33869606 −9.963926388 −24.5747574 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.185185185 0.185185185 0.166176471 0.165957447 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ −19.84024877 −19.84024877 −8.905455835 −17.17093947 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.157407407 0.157407407 0.369117647 0.373404255 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ −4.69771E−05 −4.69771E−05 0 0 a_(ψSi) ⁽³⁾ −0.000362538 −0.000362538 0 0 a_(ψSi) ⁽²⁾ 0.055133453 0.055133453 −0.004320224 0.021125116 a_(ψSi) ⁽¹⁾ 0.020862911 0.020862911 −0.110606012 −0.064218508 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 138552.1512 138552.1512 0 0 b_(ψSi) ⁽³⁾ −78.36076818 −78.36076818 0 0 b_(ψSi) ⁽²⁾ 203.1635802 203.1635802 145.9775087 66.20642825 c_(ψSi) 33.05555556 33.05555556 19.41176471 34.46808511 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ −0.079155699 −0.079155699 0 0.057672719 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.81481481 −49.81481481 −90 −49.14893617 d_(TLTTS) 0 0 0 0 d_(TLTTE) −254.5809235 −254.5809235 80.69948416 99.56817027 d_(TLTψSi) 2.260189055 2.260189055 0 0 d_(TLTθLT) −0.785540829 −0.785540829 0 0 d_(TSTE) −292.5762951 −292.5762951 0 0 d_(TSψSi) −5.914103654 −5.914103654 −1.139436429 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 1.75463008 1.75463008 0.660099875 −3.844659844 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0 0 0.006965097 e −1.304804416 −1.304804416 −2.734683251 −3.115044468

TABLE 27 Si(111) First higher-order mode 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0.003649147 0 0 0 a_(TLT) ⁽¹⁾ −17.27824731 −24.3903101 −38.65647339 −21.91795924 b_(TLT) ⁽²⁾ 67.18624026 0 0 0 c_(TLT) 0.154098361 0.15631068 0.17 0.1575 a_(TS) ⁽²⁾ 84.63185118 0 148.7691928 140.0125491 a_(TS) ⁽¹⁾ −6.307527081 −32.68184816 −15.38083251 −11.91949736 b_(TS) ⁽²⁾ 0.004461166 0 0.005012245 0.004623438 c_(TS) 0.352459016 0.345631068 0.331428571 0.33875 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ 2.909874306 8.840975559 −16.54803788 −0.024546617 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.135245902 0.148058252 0.372857143 0.33125 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0.006216698 0 0 a_(ψSi) ⁽¹⁾ −0.068574135 −0.018885558 −0.187578295 0.122573316 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 147.1439344 0 0 c_(ψSi) 22.62295082 43.10679612 22.71428571 39.1875 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.023219728 0.047846607 0.097088558 0.096327065 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −50.16393443 −50.38834951 −50.42857143 −51.25 d_(TLTTS) 0 −144.763071 0 0 d_(TLTTE) 0 0 −161.2345526 0 d_(TLTψSi) −0.827435588 0 0 1.107475984 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 103.0553675 −65.68497311 0 d_(TSψSi) 0 −1.329400713 0.82928215 −0.646921162 d_(TSθLT) 0 0 0 0 d_(TEψSi) −0.681669875 0.653050787 0.676734069 0.936807034 d_(TEθLT) 0 0 0.481989709 0.52746173 d_(ψSiθLT) 0 0 0 0 e −1.560056382 −2.656750279 −2.259351603 −1.805786084

TABLE 28 Si(111) First higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 77.3065693 243.6937004 0 a_(TLT) ⁽¹⁾ −13.49335267 −9.878165228 −6.309863061 −12.90130633 b_(TLT) ⁽²⁾ 0 0.00674795 0.006522811 0 c_(TLT) 0.300961538 0.297350993 0.29858156 0.306818182 a_(TS) ⁽²⁾ 133.2691939 160.4037443 82.71737336 100.5491122 a_(TS) ⁽¹⁾ −9.215218873 −21.20902158 −9.283157312 −7.984268054 b_(TS) ⁽²⁾ 0.006618898 0.005353274 0.006382979 0.005704201 c_(TS) 0.314423077 0.303311258 0.3 0.311363636 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 90.39669198 0 0 a_(TE) ⁽¹⁾ 0.170720276 3.925569914 −15.08313602 −9.451928755 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0.006615499 0 0 c_(TE) 0.15 0.147350993 0.363475177 0.346212121 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ −0.00740803 0 0 0 a_(ψSi) ⁽¹⁾ −0.220502432 0.083594751 −0.104344279 0.088096624 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 135.4659763 0 0 0 c_(ψSi) 20.76923077 43.70860927 17.87234043 41.47727273 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ −0.017420386 −0.012240534 0 0 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −50.28846154 −50.26490066 −90 −90 d_(TLTTS) 149.298265 220.9283416 135.5319056 135.1493422 d_(TLTTE) 0 0 0 −65.38520659 d_(TLTψSi) 0 0 0 −0.663828772 d_(TLTθLT) −0.703824061 −0.739197646 0 0 d_(TSTE) 122.4270642 0 −94.62792088 0 d_(TSψSi) 0.714493384 −1.189155195 0 −1.017237669 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0.558597609 0 0 d_(TEθLT) 0.734424122 0.628956462 0 0 d_(ψSiθLT) −0.003900657 0.003268439 0 0 e −2.246432623 −2.691572945 −3.425676672 −3.236112132

TABLE 29 Si(111) Second higher-order mode 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −26.67263869 −6.49243933 −20.61574251 −21.06290014 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.15443038 0.175438596 0.160759494 0.156896552 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −7.971316395 7.232224634 −16.40433051 −3.920556446 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.14556962 0.133333333 0.144303797 0.144827586 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 −110.7824708 −133.1826499 0 a_(TE) ⁽¹⁾ 12.77975858 −10.04988717 5.027045348 −5.686378626 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0.006463527 0.006582278 0 c_(TE) 0.151265823 0.144736842 0.35 0.35862069 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 −0.007219474 0 a_(ψSi) ⁽¹⁾ 0.028716852 0.04192074 −0.016815807 0.008780601 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 125.0280404 0 c_(ψSi) 9.683544304 50 11.58227848 48.10344828 a_(θLT) ⁽²⁾ 0.01035547 0 0 0.014789077 a_(θLT) ⁽¹⁾ 0.162093889 0.106646805 0.164306798 0.04587348 b_(θLT) ⁽²⁾ 61.8811088 0 0 55.43995244 c_(θLT) −49.62025316 −50.35087719 −51.01265823 −51.20689655 d_(TLTTS) −609.1883956 −724.6623011 −297.9828576 −203.214973 d_(TLTTE) −215.420422 0 159.6303697 0 d_(TLTψSi) 0 −3.771938969 2.003207828 −2.014745526 d_(TLTθLT) 1.80686724 0 2.218853872 0 d_(TSTE) 0 −307.4269587 0 0 d_(TSψSi) 0 0 −1.097992723 0 d_(TSθLT) 1.985202008 0 2.104127874 0 d_(TEψSi) 0 0 −1.451355926 0 d_(TEθLT) −203.386471 1.145649707 0 0 d_(ψSiθLT) 2.42647485 0.004357557 0 0 e −5.019952207 −2.13826109 −3.235663805 −3.326865691

TABLE 30 Si(111) Second higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 45.51074293 −94.44342524 0 a_(TLT) ⁽¹⁾ 0.788515154 −3.454988617 −9.832405019 −3.192556866 b_(TLT) ⁽²⁾ 0 0.006485261 0.006459172 0 c_(TLT) 0.298058252 0.295238095 0.298461538 0.298913043 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −8.97795964 1.31344944 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.142718447 0.147619048 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ 9.791468713 0.170587985 −0.71523762 −10.72534988 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.15776699 0.124603175 0.356153846 0.347826087 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0.003924448 0.001661439 0 0.00657999 a_(ψSi) ⁽¹⁾ 0.15776699 −0.024952541 0.02404454 −0.067389114 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 148.4588557 132.0861678 0 152.6937618 c_(ψSi) 15.29126214 46.9047619 14.19230769 43.04347826 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.06700163 0.042141715 0.055240362 0.061747926 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −48.73786408 −50.15873016 −49.76923077 −49.45652174 d_(TLTTS) 116.7290786 −78.78450728 0 0 d_(TLTTE) 0 85.46351406 −49.85282875 0 d_(TLTψSi) −0.70199108 0.445481139 0 0.604657146 d_(TLTθLT) −0.726496636 0 0 0 d_(TSTE) 0 −116.360096 0 0 d_(TSψSi) 0 −0.622709588 0 0 d_(TSθLT) 2.041329502 −0.339115637 0 0 d_(TEψSi) 0 0.20688896 0 0 d_(TEθLT) 0.774150432 0.489880407 −0.6608739 −1.068569294 d_(ψSiθLT) −0.005400114 0.002667922 −0.004937546 0.006290209 e −4.209434885 −1.791078273 −3.48174155 −3.934527612

TABLE 31 Si(111) Second higher-order mode 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −4.673850215 0 −8.8586067 −1.957300157 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.141509434 0 0.153125 0.16 a_(TS) ⁽²⁾ 82.42811022 0 87.42203531 0 a_(TS) ⁽¹⁾ −7.905282467 −4.948155925 −0.569845134 0.521030757 b_(TS) ⁽²⁾ 0.006949092 0 0.006037326 0 c_(TS) 0.294339623 0.314583333 0.297916667 0.285 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 53.51232744 −79.38404758 0 0 a_(TE) ⁽¹⁾ 10.58973083 10.26534018 8.135327356 −7.251553825 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.006016376 0.005677083 0 0 c_(TE) 0.183962264 0.1375 0.336458333 0.37 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0.001429494 a_(ψSi) ⁽¹⁾ 0.010122468 0.039888924 −0.016592245 −0.004853684 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 145.6875 c_(ψSi) 11.88679245 48.4375 14.0625 45.75 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ −0.005093912 0.011098836 0.047530531 0.04750516 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −50 −50.41666667 −50.72916667 −49.75 d_(TLTTS) 0 0 91.19418307 251.5375225 d_(TLTTE) 0 0 −156.3654518 0 d_(TLTψSi) 0.322255595 0 0 −0.289820964 d_(TLTθLT) −0.768436344 0 −0.735737765 0 d_(TSTE) 0 75.51836907 0 0 d_(TSψSi) −0.512402643 0.300543357 −0.724013025 0.245746891 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 −0.50556971 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0.002842264 0 0 e −2.770026639 −2.638591885 −1.980941925 −2.412296494

TABLE 32 Si(111) Second higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ 4.449764983 0 −13.78321665 −10.59163435 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.321052632 0 0.309146341 0.303164557 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0 −3.433673203 −1.746861763 3.363230821 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0 0.283443709 0.287804878 0.293037975 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 86.18383552 0 a_(TE) ⁽¹⁾ 3.853394073 8.768511808 −1.867550529 −15.68616064 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0.007157942 0 c_(TE) 0.181578947 0.135430464 0.356097561 0.363291139 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0 a_(ψSi) ⁽¹⁾ 0.014178515 0.049910217 −0.008697771 0.012742666 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 0 c_(ψSi) 12.63157895 45.99337748 15.09146341 45 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0 0.061867934 0.051566965 0.028929641 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −90 −50.59602649 −50.30487805 −50.56962025 d_(TLTTS) 0 0 0 −103.0440888 d_(TLTTE) 0 0 0 0 d_(TLTψSi) −0.181721459 0 0 0 d_(TLTθLT) 0 0 0 −0.608943868 d_(TSTE) 0 113.1914268 −75.04640382 −82.04954672 d_(TSψSi) 0 0 −0.554356722 0.673316097 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 −0.512800103 0 d_(TEθLT) 0 0 −0.656702553 d_(ψSiθLT) 0 0 0 0 e −2.401219798 −3.18651044 −3.93030224 −4.143483981

TABLE 33 Si(111) Third higher-order mode 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −3.047618237 −3.047618237 −3.047618237 −3.047618237 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.160869565 0.160869565 0.160869565 0.160869565 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0 0 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0 0 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 11.21750437 11.21750437 11.21750437 11.21750437 a_(TE) ⁽²⁾ −3.666215654 −3.666215654 −3.666215654 −3.666215654 a_(TE) ⁽¹⁾ −0.035248162 −0.035248162 −0.035248162 −0.035248162 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0.000381688 0.000381688 0.000381688 0.000381688 b_(TE) ⁽²⁾ 0.012589792 0.012589792 0.012589792 0.012589792 c_(TE) 0.245652174 0.245652174 0.245652174 0.245652174 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0 a_(ψSi) ⁽¹⁾ −0.003582211 −0.003582211 −0.003582211 −0.003582211 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 0 c_(ψSi) 35.86956522 35.86956522 35.86956522 35.86956522 a_(θLT) ⁽²⁾ −0.000596775 −0.000596775 −0.000596775 −0.000596775 a_(θLT) ⁽¹⁾ 0.003385783 0.003385783 0.003385783 0.003385783 b_(θLT) ⁽²⁾ 77.88279773 77.88279773 77.88279773 77.88279773 c_(θLT) −47.82608696 −47.82608696 −47.82608696 −47.82608696 d_(TLTTS) 0 0 0 0 d_(TLTTE) −2.939323227 −2.939323227 −2.939323227 −2.939323227 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) −0.000442922 −0.000442922 −0.000442922 −0.000442922 e −0.277577227 −0.277577227 −0.277577227 −0.277577227

TABLE 34 Si(111) Third higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ 0 0 0 0 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0 0 0 0 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 6.03484153 6.03484153 6.03484153 6.03484153 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.183333333 0.183333333 0.183333333 0.183333333 a_(TE) ⁽⁴⁾ −215.3850281 −215.3850281 −215.3850281 −215.3850281 a_(TE) ⁽³⁾ 54.12265846 54.12265846 54.12265846 54.12265846 a_(TE) ⁽²⁾ 0.942905209 0.942905209 0.942905209 0.942905209 a_(TE) ⁽¹⁾ −1.08045121 −1.08045121 −1.08045121 −1.08045121 b_(TE) ⁽⁴⁾ 0.000339332 0.000339332 0.000339332 0.000339332 b_(TE) ⁽³⁾ 0.000317558 0.000317558 0.000317558 0.000317558 b_(TE) ⁽²⁾ 0.011265432 0.011265432 0.011265432 0.011265432 c_(TE) 0.211111111 0.211111111 0.211111111 0.211111111 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0 a_(ψSi) ⁽¹⁾ −0.004526908 −0.004526908 −0.004526908 −0.004526908 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 0 c_(ψSi) 27.5 27.5 27.5 27.5 a_(θLT) ⁽²⁾ −0.00046365 −0.00046365 −0.00046365 −0.00046365 a_(θLT) ⁽¹⁾ 0.005349146 0.005349146 0.005349146 0.005349146 b_(θLT) ⁽²⁾ 57.09876543 57.09876543 57.09876543 57.09876543 c_(θLT) −46.11111111 −46.11111111 −46.11111111 −46.11111111 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 45.80413521 45.80413521 45.80413521 45.80413521 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) −0.071786246 −0.071786246 −0.071786246 −0.071786246 d_(ψSiθLT) −0.000425881 −0.000425881 −0.000425881 −0.000425881 e −0.446604617 −0.446604617 −0.446604617 −0.446604617

TABLE 35 Si(111) Third higher-order mode 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −2.477108842 −2.477108842 −2.477108842 −2.477108842 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.137349398 0.137349398 0.137349398 0.137349398 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −0.488747927 −0.488747927 −0.488747927 −0.488747927 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.336144578 0.336144578 0.336144578 0.336144578 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ −1.973253274 −1.973253274 −1.973253274 −1.973253274 a_(TE) ⁽¹⁾ −0.124870592 −0.124870592 −0.124870592 −0.124870592 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.017915517 0.017915517 0.017915517 0.017915517 c_(TE) 0.256024096 0.256024096 0.256024096 0.256024096 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾  7.6083E−07  7.6083E−07  7.6083E−07  7.6083E−07 a_(ψSi) ⁽³⁾ 7.21121E−06 7.21121E−06 7.21121E−06 7.21121E−06 a_(ψSi) ⁽²⁾ −0.000857107 −0.000857107 −0.000857107 −0.000857107 a_(ψSi) ⁽¹⁾ −0.00490823 −0.00490823 −0.00490823 −0.00490823 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 105622.9088 105622.9088 105622.9088 105622.9088 b_(ψSi) ⁽³⁾ −217.2019476 −217.2019476 −217.2019476 −217.2019476 b_(ψSi) ⁽²⁾ 208.4409929 208.4409929 208.4409929 208.4409929 c_(ψSi) 30.54216867 30.54216867 30.54216867 30.54216867 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0 0 0 0 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −90 −90 −90 −90 d_(TLTTS) 4.821777856 4.821777856 4.821777856 4.821777856 d_(TLTTE) −4.14067246 −4.14067246 −4.14067246 −4.14067246 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0.024454063 0.024454063 0.024454063 0.024454063 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0 0 0 e −0.240178915 −0.240178915 −0.240178915 −0.240178915

TABLE 36 Si(111) Third higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ 0 0 0 0 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0 0 0 0 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0.380779889 0.380779889 0.380779889 0.380779889 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.285294118 0.285294118 0.285294118 0.285294118 a_(TE) ⁽⁴⁾ −165.3225345 −165.3225345 −165.3225345 −165.3225345 a_(TE) ⁽³⁾ 23.65923214 23.65923214 23.65923214 23.65923214 a_(TE) ⁽²⁾ 2.256295059 2.256295059 2.256295059 2.256295059 a_(TE) ⁽¹⁾ −0.292409126 −0.292409126 −0.292409126 −0.292409126 b_(TE) ⁽⁴⁾ 0.00051583 0.00051583 0.00051583 0.00051583 b_(TE) ⁽³⁾ 0.00070344 0.00070344 0.00070344 0.00070344 b_(TE) ⁽²⁾ 0.015017301 0.015017301 0.015017301 0.015017301 c_(TE) 0.220588235 0.220588235 0.220588235 0.220588235 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0 a_(ψSi) ⁽¹⁾ −0.004846255 −0.004846255 −0.004846255 −0.004846255 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 0 c_(ψSi) 29.55882353 29.55882353 29.55882353 29.55882353 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.00165846 0.00165846 0.00165846 0.00165846 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −48.52941176 −48.52941176 −48.52941176 −48.52941116 d_(TLTTS) −0.04933649 −0.04933649 −0.04933649 −0.04933649 d_(TLTTE) −0.021023839 −0.021023839 −0.021023839 −0.021023839 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) −7.074776252 −7.074776252 −7.074776252 −7.074776252 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) −0.00049898 −0.00049898 −0.00049898 −0.00049898 e −0.3405485 −0.3405485 −0.3405485 −0.3405485

In an acoustic wave device according to a preferred embodiment of the present invention, I_(h) for each of the first and second higher-order modes is more than about −2.4.

In an acoustic wave device according to a preferred embodiment of the present invention, I_(h) for each of the first and third higher-order modes is more than about −2.4.

In an acoustic wave device according to a preferred embodiment of the present invention, I_(h) for each of the second and third higher-order modes is more than about −2.4.

In an acoustic wave device according to a preferred embodiment of the present invention, preferably, I_(h) for each of the first, second, and third higher-order modes is more than about −2.4. In this case, all of the responses of the first higher-order mode, the second higher-order mode, and the third higher-order mode are able to be effectively reduced or prevented.

In an acoustic wave device according to a preferred embodiment of the present invention, the piezoelectric body has a thickness of about 3.5λ or less.

In an acoustic wave device according to a preferred embodiment of the present invention, the piezoelectric body has a thickness of about 2.5λ or less.

In an acoustic wave device according to a preferred embodiment of the present invention, the piezoelectric body has a thickness of about 1.5λ or less.

In an acoustic wave device according to a preferred embodiment of the present invention, the piezoelectric body has a thickness of about 0.5λ or less.

In an acoustic wave device according to a preferred embodiment of the present invention, an acoustic wave resonator is provided as the acoustic wave device.

An acoustic wave filter according to a preferred embodiment of the present invention includes multiple resonators, in which at least one of the multiple resonators is defined by an acoustic wave device according to a preferred embodiment of the present invention. Thus, the acoustic wave filter in which at least one of the responses of the first, second, and third higher-order modes is reduced or prevented is provided.

A multiplexer according to a preferred embodiment of the present invention includes N acoustic wave filters (where N is 2 or more) having different pass bands, one terminal of each of the N acoustic wave filters being commonly connected on an antenna terminal side, in which at least one acoustic wave filter among the N acoustic wave filters excluding an acoustic wave filter having a highest-frequency pass band includes multiple acoustic wave resonators, and at least one acoustic wave resonator among the multiple acoustic wave resonators is defined by an acoustic wave device according to a preferred embodiment of the present invention.

Preferably, the multiplexers according to preferred embodiments of the present invention are each used as a composite filter device for carrier aggregation.

A high-frequency front-end circuit according to a preferred embodiment of the present invention includes an acoustic wave filter including an acoustic wave device according to a preferred embodiment of the present invention and a power amplifier connected to the acoustic wave filter.

A communication apparatus according to a preferred embodiment of the present invention includes a high-frequency front-end circuit including an acoustic wave filter that includes an acoustic wave device according to a preferred embodiment of the present invention and a power amplifier connected to the acoustic wave filter, and an RF signal processing circuit.

In the acoustic wave devices, the multiplexers, the high-frequency front-end circuits, and the communication apparatuses according to preferred embodiments of the present invention, at least one of the response of the first higher-order mode, the response of the second higher-order mode, and the response of the third higher-order mode located at higher frequencies than the main mode is able to be effectively reduced or prevented. Thus, in the multiplexers, the high-frequency front-end circuits, and the communication apparatuses including the acoustic wave devices according to preferred embodiments of the present invention, ripples due to the higher-order mode are less likely to occur in another band pass filter having a pass band with a higher frequency than the acoustic wave device.

The above and other elements, features, steps, characteristics and advantages of the present invention will become more apparent from the following detailed description of the preferred embodiments with reference to the attached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a schematic elevational cross-sectional view of an acoustic wave device according to a first preferred embodiment of the present invention, and FIG. 1B is a schematic plan view illustrating the electrode structure of the acoustic wave device according to the first preferred embodiment of the present invention.

FIG. 2 illustrates admittance characteristics of an acoustic wave resonator.

FIG. 3 illustrates the relationship between the propagation direction ψ_(Si) in a single-crystal Si layer and the strength S11 of the response of a first higher-order mode.

FIG. 4 illustrates the relationship between the wave length-normalized film thickness T_(LT) of a piezoelectric body made of lithium tantalate and the strength S11 of the response of the first higher-order mode.

FIG. 5 illustrates the relationship between the cut angle (90°+θ_(LT)) of a piezoelectric body made of lithium tantalate and the strength S11 of the response of the first higher-order mode.

FIG. 6 illustrates the relationship between the wave length-normalized film thickness T_(S) of a SiO₂ film and the strength S11 of the response of the first higher-order mode.

FIG. 7 illustrates the relationship between the wave length-normalized film thickness T_(E) of interdigital transducer electrodes and the strength S11 of the response of the first higher-order mode.

FIG. 8 is a circuit diagram of a multiplexer including an acoustic wave device according to the first preferred embodiment of the present invention.

FIG. 9 is a circuit diagram of an acoustic wave filter that includes the acoustic wave device according to the first preferred embodiment of the present invention and is used in a multiplexer.

FIG. 10A illustrates the filter characteristics of a multiplexer including an acoustic wave device of a comparative example, and FIG. 10B illustrates the filter characteristics of a multiplexer according to the first preferred embodiment of the present invention.

FIG. 11 illustrates the relationship between the wave length-normalized film thickness of a single-crystal Si layer and the maximum phases of responses of the first, second, and third higher-order modes.

FIG. 12 illustrates the relationship between the propagation direction ψ_(Si) in a single-crystal Si layer and the strength S11 of the response of the second higher-order mode.

FIG. 13 illustrates the relationship between the wave length-normalized film thickness T_(LT) of a piezoelectric body made of lithium tantalate and the strength S11 of the response of the second higher-order mode.

FIG. 14 illustrates the relationship between the cut angle (90°+θ_(LT)) of a piezoelectric body made of lithium tantalate and the strength S11 of the response of the second higher-order mode.

FIG. 15 illustrates the relationship between the wave length-normalized film thickness T_(S) of a SiO₂ film and the strength S11 of the response of the second higher-order mode.

FIG. 16 illustrates the relationship between the wave length-normalized film thickness T_(E) of interdigital transducer electrodes and the strength S11 of the response of the second higher-order mode.

FIG. 17 illustrates the relationship between the propagation direction ψ_(Si) in a single-crystal Si layer and the strength S11 of the response of the third higher-order mode.

FIG. 18 illustrates the relationship between the wave length-normalized film thickness T_(LT) of a piezoelectric body made of lithium tantalate and the strength S11 of the response of the third higher-order mode.

FIG. 19 illustrates the relationship between the cut angle (90°+θ_(LT)) of a piezoelectric body made of lithium tantalate and the strength S11 of the response of the third higher-order mode.

FIG. 20 illustrates the relationship between the wave length-normalized film thickness T_(S) of a SiO₂ film and the strength S11 of the response of the third higher-order mode.

FIG. 21 illustrates the relationship between the wave length-normalized film thickness T_(E) of interdigital transducer electrodes and the strength S11 of the response of the third higher-order mode.

FIG. 22 illustrates the relationship between the film thickness of a LiTaO₃ film in an acoustic wave device and the quality factor.

FIG. 23 illustrates the relationship between the film thickness of a LiTaO₃ film in an acoustic wave device and the temperature coefficient of frequency TCF.

FIG. 24 illustrates the relationship between the film thickness of a LiTaO₃ film in an acoustic wave device and the acoustic velocity.

FIG. 25 illustrates the relationship between the film thickness of a LiTaO₃ film and the band width ratio.

FIG. 26 illustrates the relationships among the film thickness of a SiO₂ film, materials of high-acoustic-velocity films, and the acoustic velocity.

FIG. 27 illustrates the relationships among the film thickness of a SiO₂ film, the electromechanical coupling coefficient, and materials of high-acoustic-velocity films.

FIG. 28 is a block diagram of a communication apparatus including a high-frequency front-end circuit according to a preferred embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Preferred embodiments according to the present invention will be described in detail below with reference to the attached drawings so as to clarify the present invention.

Preferred embodiments described in this specification are illustrative. It should be noted that partial replacement and combination of configurations in different preferred embodiments may be made.

FIG. 1A is a schematic elevational cross-sectional view of an acoustic wave device according to a first preferred embodiment of the present invention, and FIG. 1B is a schematic plan view illustrating the electrode structure thereof.

An acoustic wave device 1 is preferably a one-port acoustic wave resonator, for example. The acoustic wave device 1 includes a single-crystal Si layer 2 defining and functioning as a supporting substrate made of silicon. The term “supporting substrate made of silicon” includes a supporting substrate including only of silicon; and a supporting substrate made of a material including silicon as a main component and impurities. A SiO₂ film 3 defining and functioning as a silicon oxide film and a piezoelectric body 4 made of lithium tantalate (LiTaO₃) are stacked on the single-crystal Si layer 2. The piezoelectric body 4 includes first and second main surfaces 4 a and 4 b opposed to each other. Interdigital transducer electrodes 5 are disposed on the first main surface 4 a. Reflectors 6 and 7 are disposed on both sides of the interdigital transducer electrodes 5 in the propagation direction of an acoustic wave. The SiO₂ film 3 defining and functioning as a silicon oxide film may include not only SiO₂ but also, for example, silicon oxide in which SiO₂ is doped with fluorine or the like. In FIG. 1A, the SiO₂ film 3 is directly on the single-crystal Si layer 2, the piezoelectric body 4 is directly on the SiO₂ film 3, and the Interdigital transducer electrodes 5 are disposed directly on the piezoelectric body 4. However, the SiO₂ film 3 may be indirectly on (or above) the single-crystal Si layer 2, the piezoelectric body 4 may be indirectly on (or above) the SiO₂ film 3, and the Interdigital transducer electrodes 5 may be disposed indirectly on (or above) the piezoelectric body 4.

The inventors of preferred embodiments of the present invention have discovered that in an acoustic wave resonator having such a structure in which a piezoelectric body made of lithium tantalate is stacked directly or indirectly on the single-crystal Si layer 2, responses due to first, second, and third higher-order modes are generated.

FIG. 2 illustrates admittance characteristics of an acoustic wave resonator in order to explain first to third higher-order modes. The admittance characteristics illustrated in FIG. 2 are admittance characteristics of an acoustic wave resonator that has design parameters described below and that is not a preferred embodiment of the present invention.

The single-crystal Si layer has Euler angles ( _(Si), θ_(Si), ψ_(Si))=(0°, 0°, 45°). The SiO₂ film has a film thickness of about 0.30λ. The piezoelectric body made of lithium tantalate has a film thickness of about 0.30λ. The piezoelectric body made of lithium tantalate has Euler angles (φ_(LT), θ_(LT), ψ_(LT))=(0°, −40°, 0°) The wave length λ determined by the pitch of electrode fingers of the interdigital transducer electrodes is about 1 μm. Each of the interdigital transducer electrodes is defined by a stacked metal film in which an Al film and a Ti film are stacked, and each interdigital transducer electrode has a thickness of about 0.05λ in terms of aluminum.

As is apparent from FIG. 2, in the acoustic wave resonator described above, each of the responses of the first higher-order mode, the second higher-order mode, and the third higher-order mode appears at higher frequencies than the response of the main mode. Regarding the frequency positions, a position of response of first higher-order mode is lower than a position of response of second higher-order mode and a position of response of third higher-order mode, and the position of response of the second higher-order mode is lower than the position of response of the third higher-order mode. The response of the first higher-order mode is closest to the response of the main mode. However, FIG. 2 is an example, and the positional relationship of the frequencies of the modes may be switched, depending on conditions, such as the electrode thickness.

A feature of the acoustic wave device 1 according to the present preferred embodiment is the fact that at least one of the response of the first higher-order mode, the response of the second higher-order mode, and the response of the third higher-order mode is reduced or prevented.

The wave length determined by the pitch of the electrode fingers of the interdigital transducer electrodes 5 is denoted by λ. The wave length-normalized film thickness of the piezoelectric body 4 made of lithium tantalate is denoted by T_(LT). The Euler angle θ of the piezoelectric body made of lithium tantalate is denoted by θ_(LT). The wave length-normalized film thickness of the SiO₂ film 3 is denoted by T_(S). The wave length-normalized film thickness of the interdigital transducer electrodes 5 in terms of aluminum thickness is denoted by T_(E). The propagation direction in the single-crystal Si layer 2 is denoted by ψ_(Si). The wave length-normalized film thickness of the single-crystal Si layer 2 is denoted by T_(Si). T_(LT), θ_(LT), T_(S), T_(E), and ψ_(Si) are set such that I_(h) represented by Formula (1) for at least one of the responses of the first higher-order mode, the second higher-order mode, and the third higher-order mode is preferably more than about −2.4, and T_(Si)>about 20, for example. Thus, the at least one of the responses of the first, second, and third higher-order modes is effectively reduced or prevented. This will be described in detail below.

In this specification, the wave length-normalized film thickness is a value obtained by normalizing the thickness of the film to the wave length λ determined by the pitch of the electrode fingers of the interdigital transducer electrodes. Thus, a value obtained by dividing actual thickness of the film by λ is the wave length-normalized film thickness. The wave length λ determined by the pitch of the electrode fingers of the interdigital transducer electrodes may be determined by the average pitch of the electrode fingers.

$\begin{matrix} {I_{h} = {{a_{T_{LT}}^{(2)}\left( {\left( {T_{LT} - c_{T_{LT}}} \right)^{2} - b_{T_{LT}}^{(2)}} \right)} + {a_{T_{LT}}^{(1)}\left( {T_{LT} - c_{T_{LT}}} \right)} + {a_{T_{S}}^{(2)}\left( {\left( {T_{S} - c_{T_{S}}} \right)^{2} - b_{T_{LT}}^{(2)}} \right)} + {a_{T_{S}}^{(1)}\left( {T_{S} - c_{T_{S}}} \right)} + {a_{T_{E}}^{(4)}\left( {\left( {T_{E} - c_{T_{E}}} \right)^{4} - b_{T_{E}}^{(4)}} \right)} + {a_{T_{E}}^{(3)}\left( {\left( {T_{E} - c_{T_{E}}} \right)^{3} - b_{T_{E}}^{(3)}} \right)} + {a_{T_{E}}^{(2)}\left( {\left( {T_{E} - c_{T_{E}}} \right)^{2} - b_{T_{E}}^{(2)}} \right)} + {a_{T_{E}}^{(1)}\left( {T_{E} - c_{T_{E}}} \right)} + {a_{\psi_{Si}}^{(6)}\left( {\left( {\psi_{Si} - c_{\psi_{Si}}} \right)^{6} - b_{\psi_{Si}}^{(6)}} \right)} + {a_{\psi_{Si}}^{(5)}\left( {\left( {\psi_{Si} - c_{\psi_{Si}}} \right)^{2} - b_{\psi_{Si}}^{(5)}} \right)} + {a_{\psi_{Si}}^{(4)}\left( {\left( {\psi_{Si} - c_{\psi_{Si}}} \right)^{2} - b_{\psi_{Si}}^{(4)}} \right)} + {a_{\psi_{Si}}^{(3)}\left( {\left( {\psi_{Si} - c_{\psi_{Si}}} \right)^{2} - b_{\psi_{Si}}^{(3)}} \right)} + {a_{\psi_{Si}}^{(2)}\left( {\left( {\psi_{Si} - c_{\psi_{Si}}} \right)^{2} - b_{\psi_{Si}}^{(2)}} \right)} - {a_{\psi_{Si}}^{(1)}\left( {\psi_{Si} - c_{\psi_{Si}}} \right)} + {a_{\theta_{LT}}^{(2)}\left( {\left( {\theta_{LT} - c_{\theta_{LT}}} \right)^{2} - b_{\theta_{LT}}^{(2)}} \right)} + {a_{\theta_{LT}}^{(1)}\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {{d_{T_{LT}T_{S}}\left( {T_{LT} - c_{T_{LT}}} \right)}\left( {T_{S} - c_{T_{S}}} \right)} + {{d_{T_{LT}T_{E}}\left( {T_{LT} - c_{T_{LT}}} \right)}\left( {T_{E} - c_{T_{E}}} \right)} + {{d_{T_{LT}\psi_{Si}}\left( {T_{LT} - c_{T_{LT}}} \right)}\left( {\psi_{Si} - c_{\psi_{Si}}} \right)} + {{d_{T_{LT}\theta_{LT}}\left( {T_{LT} - c_{T_{LT}}} \right)}\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {{d_{T_{S}T_{E}}\left( {T_{S} - c_{T_{S}}} \right)}\left( {T_{E} - c_{T_{E}}} \right)} + {{d_{T_{S}\psi_{Si}}\left( {T_{S} - c_{T_{S}}} \right)}\left( {\psi_{Si} - c_{\psi_{Si}}} \right)} + {{d_{T_{S}\theta_{LT}}\left( {T_{S} - c_{T_{S}}} \right)}\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {{d_{T_{E}\psi_{Si}}\left( {T_{E} - c_{T_{E}}} \right)}\left( {\psi_{Si} - c_{\psi_{Si}}} \right)} + {{d_{T_{E}\theta_{LT}}\left( {T_{E} - c_{T_{E}}} \right)}\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {{d_{\psi_{Si}\theta_{LT}}\left( {\psi_{Si} - c_{\psi_{Si}}} \right)}\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + e}} & {{Formula}\mspace{14mu} (1)} \end{matrix}$

In Formula (1), coefficients a, b, c, d, and e are values presented in Tables 37 to 72 below in accordance with ranges of, for example, the type of higher-order mode, the orientation of the single-crystal Si layer 2 either of (100), (110), or (111), the wave length-normalized film thickness of the SiO₂ film 3, the wave length-normalized film thickness of the piezoelectric body made of lithium tantalate, and the propagation direction in the single-crystal Si layer 2.

TABLE 37 Si(100) First higher-order mode 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ 0 0 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0 0 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −5.857231176 −5.857231176 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.148 0.148 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ −19.75255913 −19.75255913 a_(TE) ⁽¹⁾ −2.877583447 −2.877583447 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0.022736 0.022736 c_(TE) 0.242 0.242 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ 0.004788767 0.004788767 a_(ψSi) ⁽¹⁾ 0.024306207 0.024306207 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 81.81 81.81 c_(ψSi) 8.7 8.7 a_(θLT) ⁽²⁾ −0.008235936 −0.008235936 a_(θLT) ⁽¹⁾ −0.021048278 −0.021048278 b_(θLT) ⁽²⁾ 65.16 65.16 c_(θLT) −52.2 −52.2 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) 0 0 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) −0.786852571 −0.786852571 d_(TEψSi) 0 0 d_(TEθLT) −0.237034335 −0.237034335 d_(ψSiθLT) 0 0 e −1.499248378 −1.499248378

TABLE 38 Si(100) First higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 125.5342427 a_(TLT) ⁽¹⁾ −13.43961051 −7.643409732 b_(TLT) ⁽²⁾ 0 0.006076558 c_(TLT) 0.329807692 0.321186441 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −11.80744788 −10.05306878 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.158653846 0.153389831 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 0 0 a_(TE) ⁽¹⁾ 0 −7.595099843 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0 0 c_(TE) 0 0.366101695 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ 0.003335792 0 a_(ψSi) ⁽¹⁾ 0.039268266 −0.013700762 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 191.7159763 0 c_(ψSi) 13.26923077 16.01694915 a_(θLT) ⁽²⁾ −0.007476194 0 a_(θLT) ⁽¹⁾ −0.010867175 −0.053997369 b_(θLT) ⁽²⁾ 69.19378698 0 c_(θLT) −50.19230769 −50.59322034 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) −0.629167148 −0.724576033 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) 0 0.521919406 d_(TSθLT) 0 0 d_(TEψSi) 0 −0.523966449 d_(TEθLT) 0 0 d_(ψSiθLT) 0 0 e −2.071831837 −3.228508418

TABLE 39 Si(100) First higher-order mode 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −15.6141248 −15.6141248 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.163309353 0.163309353 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −22.02440893 −22.02440893 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.325179856 0.325179856 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ −248.4374004 −248.4374004 a_(TE) ⁽²⁾ −36.57127964 −36.57127964 a_(TE) ⁽¹⁾ 13.88180854 13.88180854 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0.000480119 0.000480119 b_(TE) ⁽²⁾ 0.020416128 0.020416128 c_(TE) 0.240647482 0.240647482 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ 0.002456326 0.002456326 a_(ψSi) ⁽¹⁾ 0.048553126 0.048553126 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 279.6050929 279.6050929 c_(ψSi) 22.3381295 22.3381295 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.005427275 0.005427275 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −50.35971223 −50.35971223 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) 0 0 d_(TLTθLT) 0 0 d_(TSTE) 41.63149071 41.63149071 d_(TSψSi) −0.577179204 −0.577179204 d_(TSθLT) 0.603866778 0.603866778 d_(TEψSi) 0.134944598 0.134944598 d_(TEθLT) 0 0 d_(ψSiθLT) 0 0 e −2.703317679 −2.703317679

TABLE 40 Si(100) First higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 133.7896555 a_(TLT) ⁽¹⁾ −7.761727985 −9.701155851 b_(TLT) ⁽²⁾ 0 0.006281971 c_(TLT) 0.315508021 0.306914894 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −20.35135077 −6.186650236 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.297860963 0.298404255 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 110.8304316 0 a_(TE) ⁽¹⁾ 4.036561723 −8.229960495 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0.006431411 0 c_(TE) 0.140374332 0.363297872 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ 0.002534654 0.001652947 a_(ψSi) ⁽¹⁾ 0.024168138 −0.003241344 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 269.2484772 266.6845858 c_(ψSi) 21.4171123 20.26595745 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0 −0.066116428 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −90 −50.4787234 d_(TLTTS) 96.23533718 0 d_(TLTTE) −66.46866878 0 d_(TLTψSi) −0.404808481 −0.688053172 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) −0.733337318 0 d_(TSθLT) 0 0 d_(TEψSi) 0.584322518 −0.372994212 d_(TEθLT) 0 0 d_(ψSiθLT) 0 0 e −3.679364607 −4.30794513

TABLE 41 Si(100) Second higher-order mode 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −5.687707928 −5.687707928 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.139506173 0.139506173 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ 5.653643283 5.653643283 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.148148148 0.148148148 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 0 0 a_(TE) ⁽¹⁾ −1.004369706 −1.004369706 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0 0 c_(TE) 0.255555556 0.255555556 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ −0.000197083 −0.000197083 a_(ψSi) ⁽²⁾ −0.003376583 −0.003376583 a_(ψSi) ⁽¹⁾ 0.118081927 0.118081927 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ −379.4708632 −379.4708632 b_(ψSi) ⁽²⁾ 278.0521262 278.0521262 c_(ψSi) 23.14814815 23.14814815 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.128631041 0.128631041 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −49.32098765 −49.32098765 d_(TLTTS) 0 0 d_(TLTTE) 72.43278274 72.43278274 d_(TLTψSi) 0.604747502 0.604747502 d_(TLTθLT) −1.743618251 −1.743618251 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) 0.994157261 0.994157261 d_(TEψSi) 0 0 d_(TEθLT) 0.280889881 0.280889881 d_(ψSiθLT) 0.003095822 0.003095822 e −5.638096455 −5.638096455

TABLE 42 Si(100) Second higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ 7.809960834 4.249755245 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.30962963 0.302857143 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ 0 −0.800874586 b_(TS) ⁽²⁾ 0 0 c_(TS) 0 0.150714286 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 0 0 a_(TE) ⁽¹⁾ −3.563479635 9.07053135 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0 0 c_(TE) 0.148518519 0.353571429 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ −0.000160979 0 a_(ψSi) ⁽²⁾ −0.000757552 0.001332545 a_(ψSi) ⁽¹⁾ 0.095765615 0.003836714 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 384.7407407 0 b_(ψSi) ⁽²⁾ 278.2222222 285.0956633 c_(ψSi) 21.33333333 20.89285714 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.043185248 0.033521037 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −50 −50.92857143 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) −0.383208698 −0.220029295 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) 0 0.974573109 d_(TEψSi) 0 0 d_(TEθLT) 1.01389349 −1.078939399 d_(ψSiθLT) 0 0.002899732 e −5.569590226 −5.29442278

TABLE 43 Si(100) Second higher-order mode 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −11.51287 −11.51287 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.136328125 0.136328125 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ 6.022608826 6.022608826 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.305859375 0.305859375 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ −180.607873 −180.607873 a_(TE) ⁽²⁾ −1.347493816 −1.347493816 a_(TE) ⁽¹⁾ 4.841204365 4.841204365 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ −0.000227051 −0.000227051 b_(TE) ⁽²⁾ 0.019179688 0.019179688 c_(TE) 0.25625 0.25625 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ −0.001342794 −0.001342794 a_(ψSi) ⁽¹⁾ 0.25625 0.25625 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 275.7568359 275.7568359 c_(ψSi) 0.25625 0.25625 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.153688205 0.153688205 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −49.140625 −49.140625 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) 0 0 d_(TLTθLT) −1.180623763 −1.180623763 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) 0 0 d_(TEψSi) 0 0 d_(TEθLT) 0.41394071 0.41394071 d_(ψSiθLT) 0.003203013 0.003203013 e −4.433641408 −4.433641408

TABLE 44 Si(100) Second higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 119.666412 118.2359738 a_(TLT) ⁽¹⁾ 4.447768142 2.271979446 b_(TLT) ⁽²⁾ 0.006371047 0.00699901 c_(TLT) 0.31147541 0.30631068 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ 0 −3.805216895 b_(TS) ⁽²⁾ 0 0 c_(TS) 0 0.298543689 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 117.8354557 121.7109482 a_(TE) ⁽¹⁾ 2.107193686 −0.578851453 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0.006775956 0.006610661 c_(TE) 0.15 0.35631068 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ −0.001658706 0 a_(ψSi) ⁽¹⁾ 0.005677734 0.003834195 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 272.5477022 0 c_(ψSi) 20.90163934 20.02427184 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.051921544 0.050011808 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −48.36065574 −48.93203883 d_(TLTTS) 0 0 d_(TLTTE) 61.26575286 0 d_(TLTψSi) 0 0 d_(TLTθLT) 0 0 d_(TSTE) 0 −82.22932804 d_(TSψSi) 0 0 d_(TSθLT) 0 −0.470524678 d_(TEψSi) 0 0 d_(TEθLT) 0.904198722 −0.776132158 d_(ψSiθLT) 0.003410501 0.003906326 e −5.339814906 −5.463687811

TABLE 45 Si(100) Third higher-order mode 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −16.39135605 −16.39135605 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.196774194 0.196774194 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −4.824831305 −4.824831305 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.170967742 0.170967742 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ −45.57608817 −45.57608817 a_(TE) ⁽¹⁾ −10.80005563 −10.80005563 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0.018296046 0.018296046 c_(TE) 0.303225806 0.303225806 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0.000172048 0.000172048 a_(ψSi) ⁽²⁾ −0.00384923 −0.00384923 a_(ψSi) ⁽¹⁾ −0.009826773 −0.009826773 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 143.0843208 143.0843208 b_(ψSi) ⁽²⁾ 215.8688866 215.8688866 c_(ψSi) 22.25806452 22.25806452 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.066799879 0.066799879 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −50.16129032 −50.16129032 d_(TLTTS) 0 0 d_(TLTTE) −112.847682 −112.847682 d_(TLTψSi) 0 0 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) −1.750763196 −1.750763196 d_(TSθLT) 0 0 d_(TEψSi) 0 0 d_(TEθLT) 0.466692151 0.466692151 d_(ψSiθLT) 0 0 e −2.904746788 −2.904746788

TABLE 46 Si(100) Third higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −8.135537689 −8.135537689 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.311659193 0.311659193 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −20.38200282 −20.38200282 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.149327354 0.149327354 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 0 0 a_(TE) ⁽¹⁾ −3.460675692 −3.460675692 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0 0 c_(TE) 0.267488789 0.267488789 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ −0.003759233 −0.003759233 a_(ψSi) ⁽¹⁾ 0.015931998 0.015931998 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 239.0395946 239.0395946 c_(ψSi) 18.90134529 18.90134529 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.017576249 0.017576249 b_(θLT) ⁽²⁾ 0 c_(θLT) −49.9103139 −49.9103139 d_(TLTTS) −152.1817236 −152.1817236 d_(TLTTE) 0 0 d_(TLTψSi) −0.359387178 −0.359387178 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) 0.911415415 0.911415415 d_(TEψSi) 0 0 d_(TEθLT) 0.275815872 0.275815872 d_(ψSiθLT) 0 0 e −3.952626598 −3.952626598

TABLE 47 Si(100) Third higher-order mode 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −26.36951471 −26.36951471 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.161538462 0.161538462 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −10.09828536 −10.09828536 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.321025641 0.321025641 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ −21.38297597 −21.38297597 a_(TE) ⁽¹⁾ −2.383287449 −2.383287449 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0.01947666 0.01947666 c_(TE) 0.270512821 0.270512821 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0.000176024 0.000176024 a_(ψSi) ⁽²⁾ −0.001397911 −0.001397911 a_(ψSi) ⁽¹⁾ −0.107515297 −0.107515297 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ −282.3623122 −282.3623122 b_(ψSi) ⁽²⁾ 255.2071006 255.2071006 c_(ψSi) 23.84615385 23.84615385 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.085112984 0.085112984 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −48.97435897 −48.97435897 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) −0.816828716 −0.816828716 d_(TLTθLT) 0.865519967 0.865519967 d_(TSTE) 0 0 d_(TSψSi) −0.538336559 −0.538336559 d_(TSθLT) 0 0 d_(TEψSi) 0 0 d_(TEθLT) 0 0 d_(ψSiθLT) 0.002971652 0.002971652 e −3.504362202 −3.504362202

TABLE 48 Si(100) Third higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −6.371850196 −6.371850196 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.292192192 0.292192192 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −0.609606885 −0.609606885 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.2996997 0.2996997 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 0 0 a_(TE) ⁽¹⁾ 0 0 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0 0 c_(TE) 0 0 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0.000224133 0.000224133 a_(ψSi) ⁽²⁾ −0.004048532 −0.004048532 a_(ψSi) ⁽¹⁾ −0.126847922 −0.126847922 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 1375.85979 1375.85979 b_(ψSi) ⁽²⁾ 281.2555799 281.2555799 c_(ψSi) 19.77477477 19.77477477 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.056146223 0.056146223 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −49.48948949 −49.48948949 d_(TLTTS) 94.47145497 94.47145497 d_(TLTTE) 0 0 d_(TLTψSi) 0 0 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) −0.568942451 −0.568942451 d_(TEψSi) 0 0 d_(TEθLT) 0 0 d_(ψSiθLT) 0.005654813 0.005654813 e −4.940340284 −4.940340284

TABLE 49 Si(110) First higher-order mode 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −16.69742899 −16.69742899 −33.56520202 0 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.1675 0.1675 0.192857143 0 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 15.90196012 15.90196012 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.1525 0.1525 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 26.3030303 0 a_(TE) ⁽¹⁾ 0 0 −6.481053391 0 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0.006326531 0 c_(TE) 0 0 0.378571429 0 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ −0.000183963 −0.000183963 0 −0.000177142 a_(ψSi) ⁽²⁾ −0.003236307 −0.003236307 0 0.002186084 a_(ψSi) ⁽¹⁾ 0.071460688 0.071460688 0.085067773 0.13561432 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ −5768.71875 −5768.71875 0 2642.857143 b_(ψSi) ⁽²⁾ 399.9375 399.9375 0 500 c_(ψSi) 65.25 65.25 34.28571429 55 a_(θLT) ⁽²⁾ 0 0 0 −0.005336622 a_(θLT) ⁽¹⁾ 0 0 0.070255628 0.032718563 b_(θLT) ⁽²⁾ 0 0 0 65.75963719 c_(θLT) −90 −90 −51.42857143 −50.95238095 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 1.873870705 1.878870705 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0.716151515 0 d_(ψSiθLT) 0 0 −0.00729303 0.002110378 e −0.957101918 −0.957101918 −1.634922542 −1.290881853

TABLE 50 Si(110) First higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −23.96596978 −4.695531045 −7.344438725 −5.603099398 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.34 0.3296875 0.338983051 0.306666667 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −23.18485905 0 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.175555556 0 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 −43.48595551 −70.50554427 −41.95412638 a_(TE) ⁽¹⁾ 0 −2.467954545 −5.460437635 −2.19025056 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0.006875 0.006716461 0.006819556 c_(TE) 0 0.15 0.365254237 0.360666667 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0.000119479 −0.000172812 a_(ψSi) ⁽²⁾ 0.018474062 0 0.003987724 0.002213009 a_(ψSi) ⁽¹⁾ 0.059131688 0 −0.047908658 0.073831446 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 −2384.203107 1647.952 b_(ψSi) ⁽²⁾ 81.55555556 0 216.791152 242.24 c_(ψSi) 35.33333333 0 30.76271186 62.6 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.009475371 0 0.026725166 0 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.33333333 −90 −49.83050847 −90 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 42.3018696 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0.617240199 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 2.612107038 0 0 0 d_(TSθLT) 2.129359248 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0.871101002 0 0 0 e −2.851861362 −2.210765625 −2.573237288 −2.440604203

TABLE 51 Si(110) First higher-order mode 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −10.87353735 −17.74612134 −16.74814911 −16.74814911 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.167045455 0.158227848 0.168032787 0.168032787 a_(TS) ⁽²⁾ 92.14417413 275.6432031 0 0 a_(TS) ⁽¹⁾ −6.141913324 −0.713377524 −9.071522271 −9.071522271 b_(TS) ⁽²⁾ 0.004213585 0.004749239 0 0 c_(TS) 0.339772727 0.317721519 0.314754098 0.314754098 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ −37.82699975 0 0 0 a_(TE) ⁽¹⁾ 4.315324766 3.259148162 −5.270739047 −5.270739047 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.007147469 0 0 0 c_(TE) 0.153409091 0.138607595 0.356557377 0.356557377 a_(ψSi) ⁽⁶⁾ 0 0 −3.73552E−09 −3.73552E−09 a_(ψSi) ⁽⁵⁾ 0 0 −4.69013E−08 −4.69013E−08 a_(ψSi) ⁽⁴⁾ 0 0 1.07773E−05 1.07773E−05 a_(ψSi) ⁽³⁾ 0.000254041 −0.000266841 5.64997E−05 5.64997E−05 a_(ψSi) ⁽²⁾ 0.00704637 0.003350583 −0.007526984 −0.007526984 a_(ψSi) ⁽¹⁾ −0.123432463 0.05687546 −0.035719404 −0.035719404 b_(ψSi) ⁽⁶⁾ 0 0 1801696668 1801696668 b_(ψSi) ⁽⁵⁾ 0 0 6726299.443 6726299.443 b_(ψSi) ⁽⁴⁾ 0 0 1035415.498 1035415.498 b_(ψSi) ⁽³⁾ −1197.310014 2539.305207 3573.665857 3573.665857 b_(ψSi) ⁽²⁾ 188.2457386 286.0358917 720.1088417 720.1088417 c_(ψSi) 28.125 63.60759494 48.19672131 48.19672131 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.046748629 0.00460971 0 0 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −51.59090909 −50.75949367 −90 −90 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 105.3055279 0 0 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 58.63016883 0 0 0 d_(TSψSi) 0.443510572 0.274149566 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0.293912516 −0.280924747 0 0 d_(TEθLT) 0 0.457718571 0 0 d_(ψSiθLT) 0 −0.005165328 0 0 e −1.722804167 −2.484892701 −2.976959016 −2.976959016

TABLE 52 Si(110) First higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 39.48011293 a_(TLT) ⁽¹⁾ −5.239160454 −5.820942031 −4.867344296 −2.496300587 b_(TLT) ⁽²⁾ 0 0 0 0.00654321 c_(TLT) 0.309375 0.302702703 0.286363636 0.288888889 a_(TS) ⁽²⁾ 24.40391167 40.38499201 0 40.45660337 a_(TS) ⁽¹⁾ −2.128595361 −6.73354721 −3.626479228 −6.290401812 b_(TS) ⁽²⁾ 0.006013184 0.005624543 0 0.005617284 c_(TS) 0.3265625 0.275675676 0.31 0.272222222 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 −51.46488975 0 0 a_(TE) ⁽¹⁾ −1.921891837 −0.509929613 −1.508039016 −0.870147512 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0.006479182 0 0 c_(TE) 0.153125 0.147297297 0.341818182 0.351388889 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 −0.000165117 0 −9.55404E−05 a_(ψSi) ⁽²⁾ 0.000936051 0.00475603 0 0.002198207 a_(ψSi) ⁽¹⁾ −0.02141106 0.040196571 −0.017752634 0.036260775 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 2115.829763 0 1531.394676 b_(ψSi) ⁽²⁾ 246.9177246 196.5668371 0 199.8263889 c_(ψSi) 24.140625 57.97297297 21.13636364 60.41666667 a_(θLT) ⁽²⁾ 0 0 0 −0.003220943 a_(θLT) ⁽¹⁾ 0.023743346 0.023741003 0.038368027 0.005042496 b_(θLT) ⁽²⁾ 0 0 0 72.22222222 c_(θLT) −50.078125 −48.51351351 −50.81818182 −50 d_(TLTTS) 0 0 0 −43.45862557 d_(TLTTE) −35.16960363 −48.00382984 23.6423037 52.46703277 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0.234382842 0 0 −0.273892853 d_(ψSiθLT) 0 −0.00130658 −0.001221935 0 e −2.175330984 −2.239116787 −2.271294054 −2.496300587

TABLE 53 Si(110) First higher-order mode 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −7.587457615 −7.587457615 −7.587457615 −7.587457615 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.174380165 0.174380165 0.174380165 0.174380165 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −3.979714537 −3.979714537 −3.979714537 −3.979714537 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.150413223 0.150413223 0.150413223 0.150413223 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ −0.865040993 −0.865040993 −0.865040993 −0.865040993 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.245867769 0.245867769 0.245867769 0.245867769 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 5.87537E−07 5.87537E−07 5.87537E−07 5.87537E−07 a_(ψSi) ⁽³⁾ −8.59015E−07 −8.59015E−07 −8.59015E−07 −8.59015E−07 a_(ψSi) ⁽²⁾ −0.001948222 −0.001948222 −0.001948222 −0.001948222 a_(ψSi) ⁽¹⁾ −0.027558032 −0.027558032 −0.027558032 −0.027558032 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 1129197.497 1129197.497 1129197.497 1129197.497 b_(ψSi) ⁽³⁾ −1524.372996 −1524.372996 −1524.372996 −1524.372996 b_(ψSi) ⁽²⁾ 776.3813947 776.3813947 776.3813947 776.3813947 c_(ψSi) 41.52892562 41.52892562 41.52892562 41.52892562 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.018744549 0.018744549 0.018744549 0.018744549 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.25619835 −49.25619835 −49.25619835 −49.25619835 d_(TLTTS) 140.6234074 140.6234074 140.6234074 140.6234074 d_(TLTTE) −25.20654793 −25.20654793 −25.20654793 −25.20654793 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0 0 0 e −1.78.9519626 −1.789519626 −1.789519626 −1.789519626

TABLE 54 Si(110) Second higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 39.68139696 39.68139696 a_(TLT) ⁽¹⁾ −3.912934705 −3.912934705 −3.801935963 −3.801935963 b_(TLT) ⁽²⁾ 0 0 0.00692398 0.00692398 c_(TLT) 0.306451613 0.306451613 0.297857143 0.297857143 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0 0 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0 0 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ 1.912614784 1.912614784 −6.089810932 −6.089810932 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.148924731 0.148924731 0.347857143 0.347857143 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 8.78847E−06 8.78847E−06 a_(ψSi) ⁽²⁾ −0.0004718 −0.0004718 −0.000160567 −0.000160567 a_(ψSi) ⁽¹⁾ 0.003265633 0.003265633 −0.023574651 −0.023574651 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 2351.597668 2351.597668 b_(ψSi) ⁽²⁾ 847.4765869 847.4765869 880.2091837 880.2091837 c_(ψSi) 35.32258065 35.32258065 43.07142857 43.07142857 a_(θLT) ⁽²⁾ 0.005014741 0.005014741 0 0 a_(θLT) ⁽¹⁾ 0.023115164 0.023115164 0.030121011 0.03012011 b_(θLT) ⁽²⁾ 67.0626662 67.0626662 0 0 c_(θLT) −49.62365591 −49.62365591 −51.28571429 −51.28571429 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0 0 0.125572529 0.125572529 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0.563162206 0.563162206 −0.417002414 −0.417002414 d_(ψSiθLT) 0 0 0 0 e −2.002512986 −2.002512986 −2.550158637 −2.550158637

TABLE 55 Si(110) Second higher-order mode 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ 2.992014692 2.992014692 −1.461725087 −1.461725087 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.156390977 0.156390977 0.155345912 0.155345912 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −9.089925228 −9.089925228 −1.247751383 −1.247751383 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.305263158 0.305263158 0.327672956 0.327672956 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 −130.6388144 −130.6388144 a_(TE) ⁽¹⁾ 5.773590917 5.773590917 −0.010504162 −0.010504162 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0.006662711 0.006662711 c_(TE) 0.166541353 0.166541353 0.341823899 0.341823899 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 1.03604E−05 1.03604E−05 a_(ψSi) ⁽²⁾ −0.000377109 −0.000377109 −0.000138558 −0.000138558 a_(ψSi) ⁽¹⁾ −0.013702515 −0.013702515 −0.028102653 −0.028102653 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 3096.349671 3096.349671 b_(ψSi) ⁽²⁾ 792.2381141 792.2381141 957.6361695 957.6361695 c_(ψSi) 41.39097744 41.39097744 43.20754717 43.20754717 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.015804666 0.015804666 0.028892246 0.028892246 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.32330827 −49.32330827 −49.62264151 −49.62264151 d_(TLTTS) 0 0 −44.5976835 −44.5976835 d_(TLTTE) 80.90186655 80.90186655 −150.2428298 −150.2428298 d_(TLTψSi) 0 0 0.225109644 0.225109644 d_(TLTθLT) 0 0 0 0 d_(TSTE) 29.68261053 29.68261053 47.35851038 47.35851038 d_(TSψSi) 0.136750854 0.136750854 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) −0.146211814 −0.146211814 0 0 d_(TEθLT) 0.41229257 0.41229257 0 0 d_(ψSiθLT) 0 0 0 0 e −2.596813807 −2.596813807 −2.049341112 −2.049341112

TABLE 56 Si(110) Second higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −2.80791074 −2.80791074 0 0 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.3069869 0.3069869 0 0 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −5.618098986 −5.618098986 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.286462882 0.286462882 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 −73.23839461 −73.23839461 a_(TE) ⁽¹⁾ 8.962154821 8.962154821 −5.710295136 −5.710295136 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0.007310763 0.007310763 c_(TE) 0.167467249 0.167467249 0.330930233 0.330930233 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0 a_(ψSi) ⁽¹⁾ 0.003677309 0.003677309 0 0 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 0 c_(ψSi) 40.93886463 40.93886463 0 0 a_(θLT) ⁽²⁾ 0.00527863 0.00527863 0 0 a_(θLT) ⁽¹⁾ 0.008431458 0.008431458 0 0 b_(θLT) ⁽²⁾ 66.00179249 66.00179249 0 0 c_(θLT) −50.61135371 −50.61135371 −90 −90 d_(TLTTS) 63.6265441 63.6265441 0 0 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 57.20229582 57.20229582 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) −0.098212695 −0.098212695 0 0 d_(TEθLT) 0.32576925 0.32576925 0 0 d_(ψSiθLT) 0 0 0 0 e −2.431352404 −2.431352404 −2.39032093 −2.39032093

TABLE 57 Si(110) Third higher-order mode 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −11.04825287 −11.04825287 −11.04825287 −11.04825287 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.164705882 0.164705882 0.164705882 0.164705882 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0 0 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0 0 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ −12.86806521 −12.86806521 −12.86806521 −12.86806521 a_(TE) ⁽¹⁾ 39.88235294 39.88235294 39.88235294 39.88235294 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.019258131 0.019258131 0.019258131 0.019258131 c_(TE) 0.286470588 0.286470588 0.286470588 0.286470588 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ −0.000762445 −0.000762445 −0.000762445 −.0.000762445 a_(ψSi) ⁽¹⁾ −0.031584918 −0.031584918 −0.031584918 −0.031584918 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 749.7716263 749.7716263 749.7716263 749.7716263 c_(ψSi) 52.58823529 52.58823529 52.58823529 52.58823529 a_(θLT) ⁽²⁾ −0.004115091 −0.004115091 −0.004115091 −0.004115091 a_(θLT) ⁽¹⁾ 0.023260981 0.023260981 0.023260981 0.023260981 b_(θLT) ⁽²⁾ 81.16262976 81.16262976 81.16262976 81.16262976 c_(θLT) −50.11764706 −50.11764706 −50.11764706 −50.11764706 d_(TLTTS) 0 0 0 0 d_(TLTTE) −32.35244505 −32.35244505 −32.35244505 −32.35244505 d_(TLTψSi) 0.348515389 0.348515389 0.348515389 0.348515389 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0.000823202 0.000823202 0.000823202 0.000823202 e −1.678155024 −1.678155024 −1.678155024 −1.678155024

TABLE 58 Si(110) Third higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 34.01092867 34.01092867 a_(TLT) ⁽¹⁾ −3.294448859 −3.294448859 −2.996122319 −2.996122319 b_(TLT) ⁽²⁾ 0 0 0.005572031 0.005572031 c_(TLT) 0.328378378 0.328378378 0.31344086 0.31344086 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 2.752851676 2.752851676 −1.564359965 −1.564359965 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.162837838 0.162837838 0.160752688 0.160752688 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ −4.548790211 −4.548790211 −1.370514553 −1.370514553 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.165540541 0.165540541 0.355913978 0.355913978 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ −7.03888E−08 −7.03888E−08 −3.78178E−08 −3.78178E−08 a_(ψSi) ⁽⁴⁾  1.4265E−06  1.4265E−06 9.79065E−07 9.79065E−07 a_(ψSi) ⁽³⁾ 0.000180358 0.000180358 9.73597E−05 9.73597E−05 a_(ψSi) ⁽²⁾ −0.002681874 −0.002681874 −0.00192926 −0.00192926 a_(ψSi) ⁽¹⁾ −0.092266284 −0.092266284 −0.04329175 −0.04329175 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 11701030.08 11701030.08 24265475.25 24265475.25 b_(ψSi) ⁽⁴⁾ 1439156.296 1439156.296 1705613.393 1705613.393 b_(ψSi) ⁽³⁾ 1798.436559 1798.436559 6938.899332 6938.899332 b_(ψSi) ⁽²⁾ 930.5183985 930.5183985 1060.880593 1060.880593 c_(ψSi) 40.23648649 40.23648649 40.08064516 40.08064516 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.046000242 0.046000242 0.001380272 0.001380272 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.52702703 −49.52702703 −50.05376344 −50.05376344 d_(TLTTS) −136.9978702 −136.9978702 −73.06084164 −73.06084164 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0 0 0.096651605 0.096651605 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 −56.78924979 −56.78924979 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0.081014811 0.081014811 0 0 d_(TEθLT) 0 0 −0.194432704 −0.194432704 d_(ψSiθLT) 0 0 0.000875955 0000875955 e −2.543790382 −2.543790382 −2.964933907 −2.964933907

TABLE 59 Si(110) Third higher-order mode 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −13.1565646 −13.1565646 −13.1565646 −13.1565646 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.179661017 0.179661017 0.179661017 0.179661017 a_(TS) ⁽²⁾ −54.97015257 −54.97015257 −54.97015257 −54.97015257 a_(TS) ⁽¹⁾ 1.195559996 1.195559996 1.195559996 1.195559996 b_(TS) ⁽²⁾ 0.006496856 0.006496856 0.006496856 0.006496856 c_(TS) 0.299435028 0.299435028 0.299435028 0.299435028 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ −12.83875925 −12.83875925 −12.83875925 −12.83875925 a_(TE) ⁽¹⁾ −2.591177902 −2.591177902 −2.591177902 −2.591177902 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.02062115 0.02062115 0.02062115 0.02062115 c_(TE) 0.282768362 0.282768362 0.282768362 0.282768362 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ −0.00094978 −0.00094978 −0.00094978 −0.00094978 a_(ψSi) ⁽¹⁾ −0.016861509 −0.016861509 −0.016861509 −0.016861509 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ −0.00094978 −0.00094978 −0.00094978 −0.00094978 c_(ψSi) 44.83050847 44.83050847 44.83050847 44.83050847 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.020120147 0.020120147 0.020120147 0.020120147 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −50.50847458 −50.50847458 −50.50847458 −50.50847458 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0.250474306 0.250474306 0.250474306 0.250474306 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0.031071552 0.031071552 0.031071552 0.031071552 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0 0 0 e −1.687640015 −1.687640015 −1.687640015 −1.687640015

TABLE 60 Si(110) Third higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −8.387315737 −8.387315737 −11.34973266 −6.017883428 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.313377926 0.313377926 0.291082803 0.294578313 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0.14098252 0.140898252 3.107378473 2.287606243 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.299331104 0.299331104 0.277707006 0.296385542 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ −1.209727849 −1.209727849 −4.259242642 −1.280235687 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.152006689 0.152006689 0.343630573 0.351204819 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ −2.33027E−08 −2.33027E−08 0 0 a_(ψSi) ⁽⁴⁾ 7.78115E−07 7.78115E−07 0 0 a_(ψSi) ⁽³⁾ 5.59108E−05 5.59108E−05 −0.000194818 0 a_(ψSi) ⁽²⁾ −0.002410767 −0.002410767 0.000247924 0 a_(ψSi) ⁽¹⁾ −0.027662563 −0.027662563 0.12904143 −0.026766472 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 2083705.649 2083705.649 0 0 b_(ψSi) ⁽⁴⁾ 1386257.115 1386257.115 0 0 b_(ψSi) ⁽³⁾ −1267.413434 −1267.413434 1811.750092 0 b_(ψSi) ⁽²⁾ 895.5856198 895.5856198 293.105197 0 c_(ψSi) 42.14046823 42.14046823 19.39490446 67.95180723 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.020067585 0.020067585 −0.011988832 0.032566601 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.73244147 −49.73244147 −49.61783439 −50.96385542 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 41.29194486 d_(TLTψSi) 0 0 −0.203585177 0.376861254 d_(TLTθLT) 0 0 −0.273779971 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 −0.20937463 d_(TSθLT) −0.349110894 −0.349110894 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) −0.216865482 −0.216865482 0 0 d_(ψSiθLT) 0 0 0.00120304 0 e −2.390757235 −2.390757235 −2.548464154 −2.523994879

TABLE 61 Si(111) First higher-order mode 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ 16.07631847 20.22733656 30.72650306 27.83979251 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.145833333 0.1625 0.159574468 0.158695652 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 17.08812597 27.84866827 31.28009383 12.67453621 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.154166667 0.172916667 0.161702128 0.163043478 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ −96.15629371 0 138.3065683 0 a_(TE) ⁽¹⁾ −1.263589744 2.883915191 −9.345807167 −7.807789594 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.006649306 0 0.006229063 0 c_(TE) 0.170833333 0.14375 0.369148936 0.345652174 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 −0.006862727 a_(ψSi) ⁽¹⁾ −0.101535567 −0.012511908 −0.101466433 0.176438509 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 114.9456522 c_(ψSi) 24.375 44.375 22.0212766 37.5 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0 0 0 0 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −90 −90 −90 −90 d_(TLTTS) −477.9162005 −760.9473336 −1054.386561 −1044.340968 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0 1.332405924 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 −250.1524613 102.33575 105.8611165 d_(TSψSi) 0 0 0 −2.093429604 d_(TSθLT) 0 0 0 0 d_(TEψSi) −0.613440559 0 1.201832187 −0.525734733 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0 0 0 e −0.553295028 −1.074792989 −1.290770348 −1.165057152

TABLE 62 Si(111) First higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ −262.3995984 −262.3995984 0 0 a_(TLT) ⁽¹⁾ −59.70400634 −59.70400634 −18.45032018 −20.44479246 b_(TLT) ⁽²⁾ 0.004691358 0.004691358 0 0 c_(TLT) 0.355555556 0.355555556 0.332352941 0.331914894 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −73.33869606 −73.33869606 −9.963926388 −24.5747574 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.185185185 0.185185185 0.166176471 0.165957447 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ −19.84024877 −19.84024877 −8.905455835 −17.17093947 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.157407407 0.157407407 0.369117647 0.373404255 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ −4.69771E−05 −4.69771E−05 0 0 a_(ψSi) ⁽³⁾ −0.000362538 −0.000362538 0 0 a_(ψSi) ⁽²⁾ 0.055133453 0.055133453 −0.004320224 0.02112516 a_(ψSi) ⁽¹⁾ 0.020862911 0.020862911 −0.110606012 −0.064218508 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 138552.1512 138552.1512 0 0 b_(ψSi) ⁽³⁾ −78.36076818 −78.36076818 0 0 b_(ψSi) ⁽²⁾ 203.1635802 203.1635802 145.9775087 66.20642825 c_(ψSi) 33.05555556 33.05555556 19.41176471 34.46808511 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ −0.079155699 −0.079155699 0 0.057672719 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.81481481 −49.81481481 −90 −49.14893617 d_(TLTTS) 0 0 0 0 d_(TLTTE) −254.5809235 −254.5809235 80.69948416 99.56817027 d_(TLTψSi) 2.260189055 2.260189055 0 0 d_(TLTθLT) −0.785540829 −0.785540829 0 0 d_(TSTE) −292.5762951 −292.5762951 0 0 d_(TSψSi) −5.914103654 −5.914103654 −1.139436429 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 1.75463008 1.75463008 0.660099875 −3.844659844 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0 0 0.006965097 e −1.304804416 −1.304804416 −2.734683251 −3.115044468

TABLE 63 Si(111) First higher-order mode 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0.003649147 0 0 0 a_(TLT) ⁽¹⁾ −17.27824731 −24.3903101 −38.65647339 −21.91795924 b_(TLT) ⁽²⁾ 67.18624026 0 0 0 c_(TLT) 0.154098361 0.15631068 0.17 0.1575 a_(TS) ⁽²⁾ 84.63185118 0 148.7691928 140.0125491 a_(TS) ⁽¹⁾ −6.307527081 −32.68184816 −15.38083251 −11.91949736 b_(TS) ⁽²⁾ 0.004461166 0 0.005012245 0.004623438 c_(TS) 0.352459016 0.345631068 0.331428571 0.33875 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ 2.909874306 8.840975559 −16.54803788 −0.024546617 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.135245902 0.148058252 0.372857143 0.33195 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0.006216698 0 0 a_(ψSi) ⁽¹⁾ −0.068574135 −0.018885558 −0.187578295 0.122573316 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 147.1439344 0 0 c_(ψSi) 22.62295082 43.10679612 22.71428571 39.1875 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.023219728 0.047846607 0.097088558 0.096327065 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −50.16393443 −50.38834951 −50.42857143 −51.25 d_(TLTTS) 0 −144.763071 0 0 d_(TLTTE) 0 0 −161.2345526 0 d_(TLTψSi) −0.827435588 0 0 1.107475984 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 103.0553675 −65.68497311 0 d_(TSψSi) 0 −1.329400713 0.82928215 −0.646921162 d_(TSθLT) 0 0 0 0 d_(TEψSi) −0.681669875 0.653050787 0.676734069 0.936807034 d_(TEθLT) 0 0 0.481989709 0.52746173 d_(ψSiθLT) 0 0 0 0 e −1.560056382 −2.656750279 −2.259351603 −1.805786084

TABLE 64 Si(111) First higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 77.3065693 243.6937004 0 a_(TLT) ⁽¹⁾ −13.49335267 −9.878165228 −6.309863061 −12.90130633 b_(TLT) ⁽²⁾ 0 0.00674795 0.006522811 0 c_(TLT) 0.300961538 0.297350993 0.29858156 0.306818182 a_(TS) ⁽²⁾ 133.2691939 160.4037443 82.71737336 100.5491122 a_(TS) ⁽¹⁾ −9.215218873 −21.20902158 −9.283157312 −7.984268054 b_(TS) ⁽²⁾ 0.006618898 0.005353274 0.006382979 0.005704201 c_(TS) 0.314423077 0.303311258 0.3 0.311363636 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 90.39669198 0 0 a_(TE) ⁽¹⁾ 0.170720276 3.925569914 −15.08313602 −9.451928755 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0.006615499 0 0 c_(TE) 0.15 0.147350993 0.363475177 0.346212121 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ −0.00740803 0 0 0 a_(ψSi) ⁽¹⁾ −0.220502432 0.083594751 −0.104344279 0.088096624 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 135.4659763 0 0 0 c_(ψSi) 20.76923077 43.70860927 17.87234043 41.47727273 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ −0.017420386 −0.012240534 0 0 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −50.28846154 −50.26490066 −90 −90 d_(TLTTS) 149.298265 220.9283416 135.5319056 135.1493422 d_(TLTTE) 0 0 0 −65.38520659 d_(TLTψSi) 0 0 0 −0.663828772 d_(TLTθLT) −0.703824061 −0.739197646 0 0 d_(TSTE) 122.4270642 0 −94.62792088 0 d_(TSψSi) 0.714493384 −1.189155195 0 −1.017237669 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0.558597609 0 0 d_(TEθLT) 0.734424122 0.628956462 0 0 d_(ψSiθLT) −0.003900657 0.003268439 0 0 e −2.246432623 −2.691572945 −3.425676672 −3.236112132

TABLE 65 Si(111) Second higher-order mode 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −26.67263869 −6.49243933 −20.61574251 −21.06290014 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.15443038 0.175438596 0.160759494 0.156896552 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −7.971316395 7.232224634 −16.40433051 −3.920556446 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.14556962 0.133333333 0.144303797 0.144827586 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 −110.7824708 −133.1826499 0 a_(TE) ⁽¹⁾ 12.77975858 −10.04988717 5.027045348 −5.686378626 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0.006463527 0.006582278 0 c_(TE) 0.151265823 0.144736842 0.35 0.35862069 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 −0.007219474 0 a_(ψSi) ⁽¹⁾ 0.028716852 0.04192074 −0.016815807 0.008780601 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 125.0280404 0 c_(ψSi) 9.683544304 50 11.58227848 48.10344828 a_(θLT) ⁽²⁾ 0.01035547 0 0 0.014789077 a_(θLT) ⁽¹⁾ 0.162093889 0.106646805 0.164306798 0.04587348 b_(θLT) ⁽²⁾ 61.8811088 0 0 55.43995244 c_(θLT) −49.62025316 −50.35087719 −51.01265823 −51.20689655 d_(TLTTS) −609.1883956 −724.6623011 −297.9828576 −203.214973 d_(TLTTE) −215.420422 0 159.6303697 0 d_(TLTψSi) 0 −3.771938969 2.003207828 −2.014745526 d_(TLTθLT) 1.80686724 0 2.218853872 0 d_(TSTE) 0 −307.4269587 0 0 d_(TSψSi) 0 0 −1.097992723 0 d_(TSθLT) 1.985202008 0 2.104127874 0 d_(TEψSi) 0 0 −1.451355926 0 d_(TEθLT) −203.386471 1.145649707 0 0 d_(ψSiθLT) 2.42647485 0.004357557 0 0 e −5.019952207 −2.13826109 −3.235663805 −3.326865691

TABLE 66 Si(111) Second higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 45.51074293 −94.44342524 0 a_(TLT) ⁽¹⁾ 0.788515154 −3.454988617 −9.832405019 −3.192556866 b_(TLT) ⁽²⁾ 0 0.006485261 0.006459172 0 c_(TLT) 0.298058252 0.295238095 0.298461538 0.298913043 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −8.97795964 1.31344944 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.142718447 0.147619048 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ 9.791468713 0.170587985 −0.71523762 −10.72534988 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.15776699 0.124603175 0.356153846 0.347826087 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0.003924448 0.001661439 0 0.00657999 a_(ψSi) ⁽¹⁾ 0.15776699 −0.024952541 0.02404454 −0.067389114 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 148.4588557 132.0861678 0 152.6937618 c_(ψSi) 15.29126214 46.9047619 14.19230769 43.04347826 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.06700163 0.042141715 0.055240362 0.061747926 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −48.73786408 −50.15873016 −49.76923077 −49.45652174 d_(TLTTS) 116.7290786 −78.78450728 0 0 d_(TLTTE) 0 85.46351406 −49.85282875 0 d_(TLTψSi) −0.70199108 0.445481139 0 0.604657146 d_(TLTθLT) −0.726496636 0 0 0 d_(TSTE) 0 −116.360096 0 0 d_(TSψSi) 0 −0.622709588 0 0 d_(TSθLT) 2.041329502 −0.339115637 0 0 d_(TEψSi) 0 0.20688896 0 0 d_(TEθLT) 0.774150432 0.439880407 −0.6608739 −1.068569294 d_(ψSiθLT) −0.005400114 0.002667922 −0.004937546 0.006290209 e −4.209434885 −1.791078273 −3.48174155 −3.934527612

TABLE 67 Si(111) Second higher-order mode 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −4.673850215 0 −8.8586067 −1.957300157 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.141509434 0 0.153125 0.16 a_(TS) ⁽²⁾ 82.42811022 0 87.42203531 0 a_(TS) ⁽¹⁾ −7.905282467 −4.948155925 −0.569845134 0.521030757 b_(TS) ⁽²⁾ 0.006949092 0 0.006037326 0 c_(TS) 0.294339623 0.314583333 0.297916667 0.285 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 53.51232744 −79.38404758 0 0 a_(TE) ⁽¹⁾ 10.58973083 10.26534018 8.135327356 −7.251553825 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.006016376 0.005677083 0 0 c_(TE) 0.183962264 0.1375 0.336458333 0.37 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0.001429494 a_(ψSi) ⁽¹⁾ 0.010122468 0.039888924 −0.016592245 −0.004853684 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 145.6875 c_(ψSi) 11.88679245 48.4375 14.0625 45.75 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ −0.005093912 0.011098836 0.047530531 0.04750516 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −50 −50.41666667 −50.72916667 −49.75 d_(TLTTS) 0 0 91.19418307 251.5375225 d_(TLTTE) 0 0 −156.3654518 0 d_(TLTψSi) 0.322255595 0 0 −0.289820964 d_(TLTθLT) −0.768436344 0 −0.735737765 0 d_(TSTE) 0 75.51836907 0 0 d_(TSψSi) −0.512402643 0.300543357 −0.724013025 0.245746891 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 −0.50556971 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0.002842264 0 0 e −2.770026639 −2.638591885 −1.980941925 −2.412296494

TABLE 68 Si(111) Second higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ 4.449764983 0 −13.78321665 −10.59163435 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.321052632 0 0.309146341 0.303164557 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0 −3.433673203 −1.746861763 3.363230821 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0 0.283443709 0.287804878 0.293037975 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 86.18383552 0 a_(TE) ⁽¹⁾ 3.853394073 8.768511808 −1.867550529 −15.68616064 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0.007157942 0 c_(TE) 0.181578947 0.135430464 0.356097561 0.363291139 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0 a_(ψSi) ⁽¹⁾ 0.014178515 0.049910217 −0.008697771 0.012742666 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 0 c_(ψSi) 12.63157895 45.99337748 15.09146341 45 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0 0.061867934 0.051566965 0.028929641 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −90 −50.59602649 −50.30487805 −50.56962025 d_(TLTTS) 0 0 0 −103.0440888 d_(TLTTE) 0 0 0 0 d_(TLTψSi) −0.181721459 0 0 0 d_(TLTθLT) 0 0 0 −0.608943868 d_(TSTE) 0 113.1914268 −75.04640382 −82.04954672 d_(TSψSi) 0 0 −0.554356722 0.673316097 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 −0.512800103 0 d_(TEθLT) 0 0 −0.656702553 0 d_(ψSiθLT) 0 0 0 0 e −2.401219798 −3.18651044 −3.93030224 −4.143483981

TABLE 69 Si(111) Third higher-order mode 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −3.047618237 −3.047618237 −3.047618237 −3.047618237 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.160869565 0.160869565 0.160869565 0.160869565 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0 0 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0 0 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 11.21750437 11.21750437 11.21750437 11.21750437 a_(TE) ⁽²⁾ −3.666215654 −3.666215654 −3.666215654 −3.666215654 a_(TE) ⁽¹⁾ −0.035248162 −0.035248162 −0.035248162 −0.035248162 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0.000381688 0.000381688 0.000381688 0.000381688 b_(TE) ⁽²⁾ 0.012589792 0.012589792 0.012589792 0.012589792 c_(TE) 0.245652174 0.245652174 0.245652174 0.245652174 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0 a_(ψSi) ⁽¹⁾ −0.003582211 −0.003582211 −0.003582211 −0.003582211 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 0 c_(ψSi) 35.86956522 35.86956522 35.86956522 35.86956522 a_(θLT) ⁽²⁾ −0.000596775 −0.000596775 −0.000596775 −0.000596775 a_(θLT) ⁽¹⁾ 0.003385783 0.003385783 0.003385783 0.003385783 b_(θLT) ⁽²⁾ 77.88279773 77.88279773 77.88279773 77.88279773 c_(θLT) −47.82608696 −47.82608696 −47.82608696 −47.82608696 d_(TLTTS) 0 0 0 0 d_(TLTTE) −2.939323227 −2.939323227 −2.939323227 −2.939323227 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) −0.000442922 −0.000442922 −0.000442922 −0.000442922 e −0.277577227 −0.277577227 −0.277577227 −0.277577227

TABLE 70 Si(111) Third higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ 0 0 0 0 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0 0 0 0 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 6.03484153 6.03484153 6.03484153 6.03484153 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.183333333 0.183333333 0.183333333 0.183333333 a_(TE) ⁽⁴⁾ −215.3850281 −215.3850281 −215.3850281 −215.3850281 a_(TE) ⁽³⁾ 54.12265846 54.12265846 54.12265846 54.12265846 a_(TE) ⁽²⁾ 0.942905209 0.942905209 0.942905209 0.942905209 a_(TE) ⁽¹⁾ −1.08045121 −1.08045121 −1.08045121 −1.08045121 b_(TE) ⁽⁴⁾ 0.000339332 0.000339332 0.000339332 0.000339332 b_(TE) ⁽³⁾ 0.000317558 0.000317558 0.000317558 0.000317558 b_(TE) ⁽²⁾ 0.011265432 0.011265432 0.011265432 0.011265432 c_(TE) 0.211111111 0.211111111 0.211111111 0.211111111 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0 a_(ψSi) ⁽¹⁾ −0.004526908 −0.004526908 −0.004526908 −0.004526908 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 0 c_(ψSi) 27.5 27.5 27.5 27.5 a_(θLT) ⁽²⁾ −0.00046365 −0.00046365 −0.00046365 −0.00046365 a_(θLT) ⁽¹⁾ 0.005349146 0.005349146 0.005349146 0.005349146 b_(θLT) ⁽²⁾ 57.09876543 57.09876543 57.09876543 57.09876543 c_(θLT) −46.11111111 −46.11111111 −46.11111111 −46.11111111 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 45.80413521 45.80413521 45.80413521 45.80413524 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) −0.071786246 −0.071786246 −0.071786246 −0.071786246 d_(ψSiθLT) −0.000425881 −0.000425881 −0.000425881 −0.000425881 e −0.446604617 −0.446604617 −0.446604617 −0.446604617

TABLE 71 Si(111) Third higher-order mode 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −2.477108842 −2.477108842 −2.477108842 −2.477108842 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.137349398 0.137349398 0.137349398 0.137349398 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −0.488747927 −0.488747927 −0.488747927 −0.488747927 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.336144578 0.336144578 0.336144578 0.336144578 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ −1.973253274 −1.973253274 −1.973253274 −1.973253274 a_(TE) ⁽¹⁾ −0.124870592 −0.124870592 −0.124870592 −0.124870592 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.017915517 0.017915517 0.017915517 0.017915517 c_(TE) 0.256024096 0.256024096 0.256024096 0.256024096 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾  7.6083E−07  7.6083E−07  7.6083E−07  7.6083E−07 a_(ψSi) ⁽³⁾ 7.21121E−06 7.21121E−06 7.21121E−06 7.21121E−06 a_(ψSi) ⁽²⁾ −0.000857107 −0.000857107 −0.000857107 −0.000857107 a_(ψSi) ⁽¹⁾ −0.00490823 −0.00490823 −0.00490823 −0.00490823 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 105622.9088 105622.9088 105622.9088 105622.9088 b_(ψSi) ⁽³⁾ −217.2019476 −217.2019476 −217.2019476 −217.2019476 b_(ψSi) ⁽²⁾ 208.4409929 208.4409929 208.4409929 208.4409929 c_(ψSi) 30.54216867 30.54216867 30.54216867 30.54216867 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0 0 0 0 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −90 −90 −90 −90 d_(TLTTS) 4.821777856 4.821777856 4.821777856 4.821777856 d_(TLTTE) −4.14067246 −4.14067246 −4.14067246 −4.14067246 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0.024454063 0.024454063 0.024454063 0.024454063 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0 0 0 e −0.240178915 −0.240178915 −0.240178915 −0.240178915

TABLE 72 Si(111) Third higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ 0 0 0 0 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0 0 0 0 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0.380779889 0.380779889 0.380779889 0.380779889 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.285294118 0.285294118 0.285294118 0.285294118 a_(TE) ⁽⁴⁾ −165.3225345 −165.3225345 −165.3225345 −165.3225345 a_(TE) ⁽³⁾ 23.65923214 23.65923214 23.65923214 23.65923214 a_(TE) ⁽²⁾ 2.256295059 2.256295059 2.256295059 2.256295059 a_(TE) ⁽¹⁾ −0.292409126 −0.292409126 −0.292409126 −0.292409126 b_(TE) ⁽⁴⁾ 0.00051583 0.00051583 0.00051583 0.00051583 b_(TE) ⁽³⁾ 0.00070344 0.00070344 0.00070344 0.00070344 b_(TE) ⁽²⁾ 0.015017301 0.015017301 0.015017301 0.015017301 c_(TE) 0.220588235 0.220588235 0.220588235 0.220588235 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0 a_(ψSi) ⁽¹⁾ −0.004846255 −0.004846255 −0.004846255 −0.004846255 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 0 c_(ψSi) 29.55882353 29.55882353 29.55882353 29.55882353 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.00165846 0.00165846 0.00165846 0.00165846 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −48.52941176 −48.52941176 −48.52941176 −48.52941176 d_(TLTTS) −0.04933649 −0.04933649 −0.04933649 −0.04933649 d_(TLTTE) −0.021023839 −0.021023839 −0.021023839 −0.021023839 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) −7.074776252 −7.074776252 −7.074776252 −7.074776252 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) −0.00049898 −0.00049898 −0.00049898 −0.00049898 e −0.3405485 −0.3405485 −0.3405485 −0.3405485

The inventors of preferred embodiments of the present invention have examined how the strength of the responses of the first higher-order mode, the second higher-order mode, and the third higher-order mode change by variously changing the design parameters of T_(LT), θ_(LT), T_(S), T_(E), ψ_(Si), and T_(Si).

As the strength of response of the higher-order mode when the parameters are changed, the absolute value of S11 was determined. A smaller decibel value of the absolute value of S11 indicates a higher strength of the response of the higher-order mode. In the case of calculating S11, the intersecting width of the electrode fingers was 20λ, the number of pairs of the electrode fingers was 94, and S11 was determined by a two-dimensional finite element method using an electrode single-pair model.

The interdigital transducer electrodes had a structure in which metal films were stacked in order of Ti/Pt/Ti/Al from the piezoelectric body side. The thickness of the interdigital transducer electrodes was changed by changing the thickness of the Pt film. As the wave length-normalized film thickness T_(E) of the interdigital transducer electrodes, a wave length-normalized film thickness in terms of aluminum thickness was determined using the total mass of the interdigital transducer electrodes estimated from the density of each of the metal films.

First Higher-Order Mode

An acoustic wave resonator having the admittance characteristics illustrated in FIG. 2 is used as a reference structure. FIGS. 3 to 7 each illustrate a change in the strength S11 of the response of the first higher-order mode when the parameters are changed with respect to the reference structure. FIG. 3 indicates that the strength S11 of the response of the first higher-order mode changes when the propagation direction ψ_(Si) in the single-crystal Si layer changes from about 0° to about 45° with respect to the reference structure.

Similarly, FIG. 4 indicates that the strength S11 of the response of the first higher-order mode changes also when the wave length-normalized film thickness T_(LT) of the piezoelectric body made of lithium tantalate changes.

As illustrated in FIG. 5, the strength S11 of the response of the first higher-order mode changes also when the cut angle (90°+θ_(LT)) of the piezoelectric body made of lithium tantalate changes.

As illustrated in FIG. 6, the strength S11 of the response of the first higher-order mode changes also when the wave length-normalized film thickness T_(S) of the SiO₂ film changes.

As illustrated in FIG. 7, the strength S11 of the response of the first higher-order mode changes also when the wave length-normalized film thickness T_(E) of the interdigital transducer electrodes in terms of Al thickness changes.

FIGS. 3 to 7 indicate that the strength of the response of the first higher-order mode is able to be adjusted by changing these parameters. That is, the strength of the response of the first higher-order mode is able to be reduced by selecting the values of the parameters while the response of the main mode is maintained.

From the calculation results of FIGS. 3 to 7 and the like, the inventors of preferred embodiments of the present invention have derived the fact that I_(h) corresponding to the strength of the response of the higher-order mode is determined from the Formula (1) described above and the coefficients a, b, c, d, and e in Tables 37 to 72.

The inventors of preferred embodiments of the present invention have discovered that the coefficients in Formula (1) are values presented in Table 37 to 40, Tables 49 to 52, or Tables 61 to 64 in accordance with the ranges of the crystal orientation of the single-crystal Si layer, the wave length-normalized film thickness T_(LT) of the piezoelectric body made of lithium tantalate, the wave length-normalized film thickness T_(S) of the SiO₂ film, the wave length-normalized film thickness T_(E) of the interdigital transducer electrodes, and the propagation direction ψ_(Si) in the single-crystal Si layer. Thus, the conditions of T_(LT), θ_(LT), T_(S), T_(E), and ψ_(Si) when I_(h1) corresponding to the strength of the response of the first higher-order mode is more than about −2.4 are determined.

In a multiplexer in which multiple acoustic wave filters are connected at one terminal of each filter, the response of a higher-order mode in any one of the multiple acoustic wave filters is required to have a strength S11 of more than about −2.4 dB. This is because the influence on transmission characteristics of acoustic wave filters other than the one of the multiple acoustic wave filters is negligible. In cellular phones and the like, for example, usually, ripples appearing in a pass band of a filter are required to be about −0.8 dB or more from the viewpoint of ensuring the receiver sensitivity. It has been discovered that in the case where a higher-order mode of one acoustic wave filter is in the pass band of another acoustic wave filter, ripples having a strength of about ⅓ of the strength of the response of the higher-order mode occur in the pass band of another filter. Thus, in order to achieve ripples having a magnitude of about −0.8 dB or more in the pass band of another filter, the strength S11 of the response of the higher-order mode of one filter may be more than about −2.4 dB.

Additionally, in the acoustic wave device 1 according to the first preferred embodiment, T_(Si)>20.

Regarding the first higher-order mode, I_(h) is larger than about −2.4 (I_(h)>−2.4), and T_(Si) is larger than about 20 (T_(Si)>20). It is thus possible to effectively reduce or prevent the influence of the response of the first higher-order mode on the pass band of another acoustic wave filter. This will be described with reference to FIGS. 8 to 11.

FIG. 8 is a circuit diagram of a multiplexer. In a multiplexer 10, first to fourth acoustic wave filters 11 to 14 are commonly connected on the antenna terminal 15 side. FIG. 9 is a circuit diagram of a first acoustic wave filter 11. The first acoustic wave filter 11 includes multiple series-arm resonators S1 to S3 and multiple parallel-arm resonators P1 and P2. That is, the first acoustic wave filter 11 is a ladder filter. The series-arm resonators S1 to S3 and the parallel-arm resonators P1 and P2 are defined by the acoustic wave devices 1.

In preferred embodiments of the present invention, the circuit configuration of the acoustic wave filter including the acoustic wave device is not limited thereto. For example, an acoustic wave filter including a longitudinally coupled resonator acoustic wave filter may be used. In this case, the longitudinally coupled resonator acoustic wave filter may be the acoustic wave device. An acoustic wave resonator coupled to the longitudinally coupled resonator acoustic wave filter may be defined by the acoustic wave device according to preferred embodiments of the present invention.

Pass bands of the first to fourth acoustic wave filters 11 to 14 are referred to as a first pass band to a fourth pass band. Regarding the frequency positions, preferably, first pass band<second pass band<third pass band<fourth pass band.

For comparison, a multiplexer including a first acoustic wave filter according to a comparative example was provided as in the foregoing preferred embodiment, except that the acoustic wave resonator having the reference structure described above was used. That is, in the multiplexer of the comparative example, the acoustic wave resonator having the reference structure and having the admittance characteristics illustrated in FIG. 2 was used in place of the acoustic wave device 1 of the present preferred embodiment described above. FIG. 10A illustrates filter characteristics of the first acoustic wave filter and a second acoustic wave filter in the multiplexer of the comparative example. A solid line indicates the filter characteristics of the first acoustic wave filter. A broken line indicates the filter characteristics of the second acoustic wave filter. Band A indicates the pass band of the first acoustic wave filter. Band B indicates the pass band of the second acoustic wave filter. A large ripple appears in the second pass band. This is because the response of the first higher-order mode of the acoustic wave resonator used in the first acoustic wave filter largely appears.

FIG. 10B illustrates filter characteristics of a multiplexer according to a preferred embodiment of the present invention. A solid line indicates the filter characteristics of the first acoustic wave filter. A broken line indicates the filter characteristics of the second acoustic wave filter. Here, the first acoustic wave filter is defined by the acoustic wave device according to the foregoing preferred embodiment. Thus, a large ripple does not appear in the second pass band. That is, in the pass band of the second acoustic wave filter, which is another filter, a large ripple does not appear. Thus, the filter characteristics of the second acoustic wave filter are not easily degraded.

As described above, in the multiplexer according to a preferred embodiment of the present invention, the response of the first higher-order mode is reduced or prevented in the acoustic wave filter including the acoustic wave device according to a preferred embodiment of the present invention. It is thus possible to effectively reduce or prevent the deterioration of the filter characteristics of another acoustic wave filter having a higher-frequency pass band than the acoustic wave filter.

FIG. 11 illustrates the relationship between the wave length-normalized film thickness of the single-crystal Si layer 2 and the maximum phases of responses of the first, second, and third higher-order modes. FIG. 11 indicates that when T_(Si)>20, it is possible to effectively reduce or prevent the strength of the response of each of the first higher-order mode, the second higher-order mode, and the third higher-order mode.

Second Higher-Order Mode

FIG. 12 illustrates the relationship between the propagation direction ψ_(Si) in the single-crystal Si layer and the strength S11 of the response of the second higher-order mode. As is apparent from FIG. 12, the strength S11 of the response of the second higher-order mode changes when ψ_(Si) changes. Similarly, as illustrated in FIG. 13, the strength S11 of the response of the second higher-order mode changes when the wave length-normalized film thickness T_(LT) of the piezoelectric body made of lithium tantalate changes. As illustrated in FIG. 14, the strength S11 of the response of the second higher-order mode changes also when the cut angle (90°+θ_(LT)) of the piezoelectric body made of lithium tantalate changes. As illustrated in FIG. 15, the strength S11 of the response of the second higher-order mode changes also when the wave length-normalized film thickness T_(S) of the SiO₂ film changes. As illustrated in FIG. 16, the strength S11 of the response of the second higher-order mode changes also when the wave length-normalized film thickness T_(E) of the interdigital transducer electrodes in terms of Al changes.

From the calculation results of FIGS. 12 to 16 and the like, similarly to the case of the first higher-order mode, the coefficients in Formula (1) for expressing I_(h2) corresponding to the strength of the response of the second higher-order mode were determined. When the coefficients of Formula (1) are set as described in Tables 41 to 44, Tables 53 to 56, or Tables 65 to 68 in accordance with ranges of the orientation of the single-crystal Si layer of (100), (110), or (111), the wave length-normalized film thickness T_(LT) of the piezoelectric body made of lithium tantalate, the wave length-normalized film thickness T_(S) of the SiO₂ film, the wave length-normalized film thickness T_(E) of the interdigital transducer electrodes, and the propagation direction ψ_(Si), I_(h2) corresponding to the strength of the response of the second higher-order mode are able to be expressed. In particular, in the case where the conditions of T_(LT), θ_(LT), T_(S), T_(E), and ψ_(Si) when I_(h2) is about −2.4 or more are determined and where T_(Si) is larger than about 20 (T_(Si)>20), the response of the second higher-order mode is also able to be sufficiently reduced.

Third Higher-Order Mode

FIG. 17 illustrates the relationship between the propagation direction ψ_(Si) in the single-crystal Si layer and the strength S11 of the response of the third higher-order mode. As is apparent from FIG. 17, the strength S11 of the response of the third higher-order mode changes when ψ_(Si) changes. Similarly, as illustrated in FIG. 18, the strength S11 of the response of the third higher-order mode changes also when the wave length-normalized film thickness T_(LT) of the piezoelectric body made of lithium tantalate changes. As illustrated in FIG. 19, the strength S11 of the response of the third higher-order mode changes also when the cut angle (90°+θ_(LT)) of the piezoelectric body made of lithium tantalate changes. As illustrated in FIG. 20, the strength S11 of the response of the third higher-order mode changes also when the wave length-normalized film thickness T_(S) of the SiO₂ film changes. As illustrated in FIG. 21, the strength S11 of the response of the third higher-order mode changes also when the wave length-normalized film thickness T_(E) of the interdigital transducer electrodes in terms of Al changes.

From FIGS. 17 to 21 and the like, the coefficients in Formula (1) for expressing I_(h3) corresponding to the strength of the response of the third higher-order mode were determined. When the coefficients of Formula (1) are set as described in Tables 45 to 48, Tables 57 to 60, or Tables 69 to 72 in accordance with ranges of the orientation of the single-crystal Si layer of (100), (110), or (111), the wave length-normalized film thickness T_(LT) of the piezoelectric body made of lithium tantalate, the wave length-normalized film thickness T_(S) of the SiO₂ film, the wave length-normalized film thickness T_(E) of the interdigital transducer electrodes, and the propagation direction ψ_(Si), I_(h3) corresponding to the strength of the response of the third higher-order mode are able to be expressed. In particular, in the case where the conditions of T_(LT), θ_(LT), T_(S), T_(E), and ψ_(Si) when I_(h3) is about −2.4 or more are determined and where T_(Si) is larger than about 20 (T_(Si)>20), the response of the third higher-order mode is able to also be sufficiently reduced.

Regarding I_(h) for all of the first higher-order mode, the second higher-order mode, and the third higher-order mode, I_(h)>−about 2.4 is preferable. In this case, it is possible to effectively reduce or prevent the influence of the first to third higher-order modes on another acoustic wave filter. Regarding I_(h) for the first higher-order mode and the second higher-order mode, I_(h) for the first higher-order mode and the third higher-order mode, or I_(h) for the second higher-order mode and the third higher-order mode, I_(h)>about −2.4 may preferably be used. In this case, it is possible to reduce or prevent the influence of two higher-order modes selected from the first to third higher-order modes.

In the case of using the structure of preferred embodiments of the present invention, as described above, a higher-order mode tends to be confined in a portion where the SiO₂ film 3 and the piezoelectric body 4 are stacked. However, in the case where the piezoelectric body 4 has a thickness of about 3.5λ or less, the stacked portion of the SiO₂ film 3 and the piezoelectric body 4 has a small thickness. Thus, the higher-order mode is not easily confined therein.

More preferably, the piezoelectric body 4 made of lithium tantalate has a thickness of about 2.5λ or less, for example. In this case, the absolute value of the temperature coefficient of frequency TCF is able to be reduced. Even more preferably, the piezoelectric body 4 made of lithium tantalate has a thickness of about 1.5λ or less, for example. In this case, the electromechanical coupling coefficient is able to be easily adjusted. Still even more preferably, the piezoelectric body 4 made of lithium tantalate has a thickness of about 0.5λ or less, for example. In this case, the electromechanical coupling coefficient is able to be easily adjusted in a wide range.

In Formula (1),

a) In the case of using Si(100) (Euler angles (φ_(Si)=0±5°, θ_(Si)=0±5°, ψ_(Si))), the range of ψ_(Si) is preferably 0°≤ψ_(Si)≤45°, for example. However, from the symmetry of the crystal structure of Si(100), ψ_(Si) and ψ_(Si)±(n×90°) have the same meaning (where n=1, 2, 3 . . . ). Similarly, ψ_(Si) and −ψ_(Si) have the same meaning.

b) In the case of using Si(110) (Euler angles (φ_(Si)=−45±5°, θ_(Si)=−90±5°, ψ_(Si))), the range of ψ_(Si) is preferably 0°≤ψ_(Si)≤90°, for example. However, from the symmetry of the crystal structure of Si(110), ψ_(Si) and ψ_(Si)±(n×180°) have the same meaning (where n=1, 2, 3 . . . ). Similarly, ψ_(Si) and −ψ_(Si) have the same meaning.

c) In the case of using Si(111) (Euler angles (φ_(Si)=−45±5°, θ_(Si)=−54.73561±5°, ψ_(Si))), the range of ψ_(Si) is preferably 0°≤ψ_(Si)≤60° for example. However, from the symmetry of the crystal structure of Si(111), ψ_(Si) and ψ_(Si)±(n×120°) have the same meaning (where n=1, 2, 3 . . . ). Similarly, ψ_(Si) and −ψ_(Si) have the same meaning.

The range of θ_(LT) is −180°<θ_(LT)≤0°. θ_(LT) and θ_(LT)+180° may be treated as having the same meaning.

In this specification, for example, the range of “0°±5°” in the Euler angles (0°±5°, θ, 0°±15°) means within the range about −5° or more and about +5° or less. The range of 0°±15° means within the range of about −15° or more and about +15° or less.

FIG. 22 illustrates, in an acoustic wave device in which a low-acoustic-velocity film made of a SiO₂ film having a thickness of about 0.35λ and a piezoelectric film made of lithium tantalate with Euler angles of (0°, 140.0°, 0°) are stacked on a high-acoustic-velocity supporting substrate made of silicon, the relationship between the film thickness of the LiTaO₃ film and the quality factor. The vertical axis of FIG. 22 is the product of the quality characteristics and the band width ratio (Δf) of the resonator. FIG. 23 illustrates the relationship between the film thickness of the LiTaO₃ film and the temperature coefficient of frequency TCF. FIG. 24 illustrates the film thickness of the LiTaO₃ film and the acoustic velocity. From FIG. 22, the film thickness of the LiTaO₃ film is preferably about 3.5λ or less, for example. In this case, the quality factor is high, compared with the case of a film thickness of more than about 3.5λ. More preferably, the film thickness of the LiTaO₃ film is about 2.5λ or less, for example, in order to further increase the quality factor.

From FIG. 23, in the case where the LiTaO₃ film has a thickness of about 2.5λ or less, the absolute value of the temperature coefficient of frequency TCF is able to be reduced, compared with the case of a film thickness of more than about 2.5λ. More preferably, the film thickness of the LiTaO₃ film is about 2λ or less, for example. In this case, the absolute value of the temperature coefficient of frequency TCF is able to be about 10 ppm/° C. or less. To reduce the absolute value of the temperature coefficient of frequency TCF, the film thickness of the LiTaO₃ film is more preferably about 1.5λ or less, for example.

From FIG. 24, when the film thickness of the LiTaO₃ film is more than 1.5λ, a change in acoustic velocity is markedly small.

As illustrated in FIG. 25, however, when the film thickness of the LiTaO₃ film is in the range of about 0.05λ or more and about 0.5λ or less, the band width ratio changes greatly. Thus, the electromechanical coupling coefficient is able to be adjusted in a wider range. To extend the adjustment ranges of the electromechanical coupling coefficient and the band width ratio, the film thickness of the LiTaO₃ film is preferably in the range of about 0.05λ or more and about 0.5λ or less, for example.

FIG. 26 illustrates the relationship between the film thickness of SiO₂ (λ) and the acoustic velocity, and FIG. 27 illustrates the relationship between the film thickness of SiO₂ (λ) and the electromechanical coupling coefficient. The acoustic wave device according to preferred embodiments of the present invention may include a low-acoustic-velocity film and a high-acoustic-velocity film disposed between the single-crystal Si layer and the piezoelectric body. Here, for example, a silicon nitride film, an aluminum oxide film, or a diamond film was preferably used as a high-acoustic-velocity film disposed below the low-acoustic-velocity film made of SiO₂. The low-acoustic-velocity film refers to a film in which the acoustic velocity of a bulk wave that propagates through the low-acoustic-velocity film is lower than the acoustic velocity of an acoustic wave that propagates through the piezoelectric body. The high-acoustic-velocity film refers to a film in which the acoustic velocity of a bulk wave that propagates through the high-acoustic-velocity film is higher than the acoustic velocity of an acoustic wave that propagates through the piezoelectric body. The film thickness of the high-acoustic-velocity film was 1.5λ. The acoustic velocity of a bulk wave that propagates through silicon nitride is about 6,000 m/s. The acoustic velocity of a bulk wave that propagates through aluminum oxide is about 6,000 m/s. The acoustic velocity of a bulk wave that propagates through diamond is about 12,800 m/s. As illustrated in FIGS. 26 and 27, when the material of the high-acoustic-velocity film and the film thickness of the SiO₂ film are changed, the electromechanical coupling coefficient and the acoustic velocity are little changed. In particular, as illustrated in FIG. 27, when the film thickness of the SiO₂ film is about 0.1λ or more and about 0.5λ or less, the electromechanical coupling coefficient is little changed regardless of the material of the high-acoustic-velocity film. As illustrated in FIG. 26, when the film thickness of the SiO₂ film is about 0.3λ or more and about 2λ or less, the acoustic velocity is unchanged regardless of the material of the high-acoustic-velocity film. Thus, the film thickness of the low-acoustic-velocity film made of silicon oxide is preferably about 2λ or less, and more preferably about 0.5λ or less, for example.

The acoustic wave device of each preferred embodiment may be used as a component, such as a multiplexer, used in a high-frequency front-end circuit. An example of such a high-frequency front-end circuit will be described below.

FIG. 28 is a schematic block diagram of a communication apparatus including a high-frequency front-end circuit according to a preferred embodiment of the present invention. A communication apparatus 240 includes an antenna 202, a high-frequency front-end circuit 230, and an RF signal processing circuit 203. The high-frequency front-end circuit 230 is a circuit section connected to the antenna 202. The high-frequency front-end circuit 230 includes a multiplexer 210 and amplifiers 221 to 224 to define and function as power amplifiers. The multiplexer 210 includes first to fourth filters 211 to 214. As the multiplexer 210, a multiplexer according to a preferred embodiment of the present invention may preferably be used. The multiplexer 210 includes a common antenna terminal 225 connected to the antenna 202. One terminal of each of the first to third filters 211 to 213 defining and functioning as reception filters and one terminal of the fourth filter 214 defining and functioning as a transmission filter are connected in common to the common antenna terminal 225. Output terminals of the first to third filters 211 to 213 are connected to the amplifiers 221 to 223, respectively. The input terminal of the fourth filter 214 is connected to the amplifier 224.

The output terminals of the amplifiers 221 to 223 are connected to the RF signal processing circuit 203. The input terminal of the amplifier 224 is connected to the RF signal processing circuit 203.

The multiplexer according to the present preferred embodiment may be appropriately used as the multiplexer 210 in the communication apparatus 240.

Multiplexer according to preferred embodiments of the present invention may include multiple transmission filters and multiple reception filters. The multiplexer includes n band-pass filters where n is 2 or more. Thus, a duplexer is also included in a multiplexer in the present invention.

Filters, multiplexers that can be used for a multiband system, front-end circuits, and communication apparatuses according to preferred embodiments of the present invention can be widely used for communication equipment such as mobile phones, for example.

While preferred embodiments of the present invention have been described above, it is to be understood that variations and modifications will be apparent to those skilled in the art without departing from the scope and spirit of the present invention. The scope of the present invention, therefore, is to be determined solely by the following claims. 

What is claimed is:
 1. An acoustic wave device, comprising: a supporting substrate made of silicon; a silicon oxide film stacked on or above the supporting substrate; a piezoelectric body stacked on or above the silicon oxide film, the piezoelectric body being made of lithium tantalate; and interdigital transducer electrodes disposed on or above a main surface of the piezoelectric body; wherein where a wave length determined by a pitch of electrode fingers of the interdigital transducer electrodes is denoted by λ, a wave length-normalized film thickness of the piezoelectric body is denoted by T_(LT), an Euler angle θ of the piezoelectric body is denoted by θ_(LT), a wave length-normalized film thickness of the silicon oxide film is denoted by T_(S), a wave length-normalized film thickness of the interdigital transducer electrodes in terms of aluminum thickness is denoted by T_(E), a propagation direction in the supporting substrate is denoted by ψ_(Si), and a wave length-normalized film thickness of the supporting substrate is denoted by T_(Si), T_(LT), θ_(LT), T_(S), T_(E), and ψ_(Si) are set such that I_(h) represented by Formula (1) below for at least one of responses of a first higher-order mode, a second higher-order mode, and a third higher-order mode is more than about −2.4, and T_(Si)>20; $\begin{matrix} {{I_{h} = {{a_{T_{LT}}^{(2)}\left( {\left( {T_{LT} - c_{T_{LT}}} \right)^{2} - b_{T_{LT}}^{(2)}} \right)} + {a_{T_{LT}}^{(1)}\left( {T_{LT} - c_{T_{LT}}} \right)} + {a_{T_{S}}^{(2)}\left( {\left( {T_{S} - c_{T_{S}}} \right)^{2} - b_{T_{LT}}^{(2)}} \right)} + {a_{T_{S}}^{(1)}\left( {T_{S} - c_{T_{S}}} \right)} + {a_{T_{E}}^{(4)}\left( {\left( {T_{E} - c_{T_{E}}} \right)^{4} - b_{T_{E}}^{(4)}} \right)} + {a_{T_{E}}^{(3)}\left( {\left( {T_{E} - c_{T_{E}}} \right)^{3} - b_{T_{E}}^{(3)}} \right)} + {a_{T_{E}}^{(2)}\left( {\left( {T_{E} - c_{T_{E}}} \right)^{2} - b_{T_{E}}^{(2)}} \right)} + {a_{T_{E}}^{(1)}\left( {T_{E} - c_{T_{E}}} \right)} + {a_{\psi_{Si}}^{(6)}\left( {\left( {\psi_{Si} - c_{\psi_{Si}}} \right)^{6} - b_{\psi_{Si}}^{(6)}} \right)} + {a_{\psi_{Si}}^{(5)}\left( {\left( {\psi_{Si} - c_{\psi_{Si}}} \right)^{2} - b_{\psi_{Si}}^{(5)}} \right)} + {a_{\psi_{Si}}^{(4)}\left( {\left( {\psi_{Si} - c_{\psi_{Si}}} \right)^{2} - b_{\psi_{Si}}^{(4)}} \right)} + {a_{\psi_{Si}}^{(3)}\left( {\left( {\psi_{Si} - c_{\psi_{Si}}} \right)^{2} - b_{\psi_{Si}}^{(3)}} \right)} + {a_{\psi_{Si}}^{(2)}\left( {\left( {\psi_{Si} - c_{\psi_{Si}}} \right)^{2} - b_{\psi_{Si}}^{(2)}} \right)} - {a_{\psi_{Si}}^{(1)}\left( {\psi_{Si} - c_{\psi_{Si}}} \right)} + {a_{\theta_{LT}}^{(2)}\left( {\left( {\theta_{LT} - c_{\theta_{LT}}} \right)^{2} - b_{\theta_{LT}}^{(2)}} \right)} + {a_{\theta_{LT}}^{(1)}\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {{d_{T_{LT}T_{S}}\left( {T_{LT} - c_{T_{LT}}} \right)}\left( {T_{S} - c_{T_{S}}} \right)} + {{d_{T_{LT}T_{E}}\left( {T_{LT} - c_{T_{LT}}} \right)}\left( {T_{E} - c_{T_{E}}} \right)} + {{d_{T_{LT}\psi_{Si}}\left( {T_{LT} - c_{T_{LT}}} \right)}\left( {\psi_{Si} - c_{\psi_{Si}}} \right)} + {{d_{T_{LT}\theta_{LT}}\left( {T_{LT} - c_{T_{LT}}} \right)}\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {{d_{T_{S}T_{E}}\left( {T_{S} - c_{T_{S}}} \right)}\left( {T_{E} - c_{T_{E}}} \right)} + {{d_{T_{S}\psi_{Si}}\left( {T_{S} - c_{T_{S}}} \right)}\left( {\psi_{Si} - c_{\psi_{Si}}} \right)} + {{d_{T_{S}\theta_{LT}}\left( {T_{S} - c_{T_{S}}} \right)}\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {{d_{T_{E}\psi_{Si}}\left( {T_{E} - c_{T_{E}}} \right)}\left( {\psi_{Si} - c_{\psi_{Si}}} \right)} + {{d_{T_{E}\theta_{LT}}\left( {T_{E} - c_{T_{E}}} \right)}\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {{d_{\psi_{Si}\theta_{LT}}\left( {\psi_{Si} - c_{\psi_{Si}}} \right)}\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + e}};} & {{Formula}\mspace{14mu} (1)} \end{matrix}$ where coefficients a, b, c, d, and e in Formula (1) are values presented in Tables 1 to 36 below in accordance with ranges of orientation of the supporting substrate either of (100), (110), or (111), a type of higher-order mode, the wave length-normalized film thickness of the silicon oxide film, the wave length-normalized film thickness of the piezoelectric body, and the propagation direction in the supporting substrate; TABLE 1 Si(100) First higher-order mode 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ 0 0 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0 0 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −5.857231176 −5.857231176 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.148 0.148 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ −19.75255913 −19.75255913 a_(TE) ⁽¹⁾ −2.877583447 −2.877583447 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0.022736 0.022736 c_(TE) 0.242 0.242 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ 0.004788767 0.004788767 a_(ψSi) ⁽¹⁾ 0.024306207 0.024306207 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 81.81 81.81 c_(ψSi) 8.7 8.7 a_(θLT) ⁽²⁾ −0.008235936 −0.008235936 a_(θLT) ⁽¹⁾ −0.021048278 −0.021048278 b_(θLT) ⁽²⁾ 65.16 65.16 c_(θLT) −52.2 −52.2 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) 0 0 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) −0.786852571 −0.786852571 d_(TEψSi) 0 0 d_(TEθLT) −0.237034335 −0.237034335 d_(ψSiθLT) 0 0 e −1.499248378 −1.499248378;

TABLE 2 Si(100) First higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 125.5342427 a_(TLT) ⁽¹⁾ −13.43961051 −7.643409732 b_(TLT) ⁽²⁾ 0 0.006076558 c_(TLT) 0.329807692 0.321186441 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −11.80744788 −10.05306878 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.158653846 0.153389831 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 0 0 a_(TE) ⁽¹⁾ 0 −7.595099843 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0 0 c_(TE) 0 0.366101695 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ 0.003335792 0 a_(ψSi) ⁽¹⁾ 0.039268266 −0.013700762 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 191.7159763 0 c_(ψSi) 13.26923077 16.01694915 a_(θLT) ⁽²⁾ −0.007476194 0 a_(θLT) ⁽¹⁾ −0.010867175 −0.053997369 b_(θLT) ⁽²⁾ 69.19378698 0 c_(θLT) −50.19230769 −50.59322034 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) −0.629167148 −0.724576033 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) 0 0.521919406 d_(TSθLT) 0 0 d_(TEψSi) 0 −0.523966449 d_(TEθLT) 0 0 d_(ψSiθLT) 0 0 e −2.071831837 −3.228508418;

TABLE 3 Si(100) First higher-order mode 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −15.6141248 −15.6141248 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.163309353 0.163309353 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −22.02440893 −22.02440893 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.325179856 0.325179856 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ −248.4374004 −248.4374004 a_(TE) ⁽²⁾ −36.57127964 −36.57127964 a_(TE) ⁽¹⁾ 13.88180854 13.88180854 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0.000480119 0.000480119 b_(TE) ⁽²⁾ 0.020416128 0.020416128 c_(TE) 0.240647482 0.240647482 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ 0.002456326 0.002456326 a_(ψSi) ⁽¹⁾ 0.048553126 0.048553126 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 279.6050929 279.6050929 c_(ψSi) 22.3381295 22.3381295 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.005427275 0.005427275 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −50.35971223 −50.35971223 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) 0 0 d_(TLTθLT) 0 0 d_(TSTE) 41.63149071 41.63149071 d_(TSψSi) −0.577179204 −0.577179204 d_(TSθLT) 0.603866778 0.603866778 d_(TEψSi) 0.134944598 0.134944598 d_(TEθLT) 0 0 d_(ψSiθLT) 0 0 e −2.703317679 −2.703317679;

TABLE 4 Si(100) First higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 133.7896555 a_(TLT) ⁽¹⁾ −7.761727985 −9.701155851 b_(TLT) ⁽²⁾ 0 0.006281971 c_(TLT) 0.315508021 0.306914894 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −20.35135077 −6.186650236 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.297860963 0.298404255 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 110.8304316 0 a_(TE) ⁽¹⁾ 4.036561723 −8.229960495 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0.006431411 0 c_(TE) 0.140374332 0.363297872 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ 0.002534654 0.001652947 a_(ψSi) ⁽¹⁾ 0.024168138 −0.003241344 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 269.2484772 266.6845858 c_(ψSi) 21.4171123 20.26595745 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0 −0.066116428 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −90 −50.4787234 d_(TLTTS) 96.23533718 0 d_(TLTTE) −66.46866878 0 d_(TLTψSi) −0.404808481 −0.688053172 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) −0.733337318 0 d_(TSθLT) 0 0 d_(TEψSi) 0.584322518 −0.372994212 d_(TEθLT) 0 0 d_(ψSiθLT) 0 0 e −3.679364607 −4.30794513;

TABLE 5 Si(100) Second higher-order mode 0 < T_(LT) < 0.2 0 ≤ T_(S) < 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −5.687707928 −5.687707928 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.139506173 0.139506173 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ 5.653643283 5.653643283 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.148148148 0.148148148 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 0 0 a_(TE) ⁽¹⁾ −1.004369706 −1.004369706 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0 0 c_(TE) 0.255555556 0.255555556 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ −0.000197083 −0.000197083 a_(ψSi) ⁽²⁾ −0.003376583 −0.003376583 a_(ψSi) ⁽¹⁾ 0.118081927 0.118081927 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ −379.4708632 −379.4708632 b_(ψSi) ⁽²⁾ 278.0521262 278.0521262 c_(ψSi) 23.14814815 23.14814815 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.128631041 0.128631041 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −49.32098765 −49.32098765 d_(TLTTS) 0 0 d_(TLTTE) 72.43278274 72.43278274 d_(TLTψSi) 0.604747502 0.604747502 d_(TLTθLT) −1.743618251 −1.743618251 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) 0.994157261 0.994157261 d_(TEψSi) 0 0 d_(TEθLT) 0.280889881 0.280889881 d_(ψSiθLT) 0.003095822 0.003095822 e −5.638096455 −5.638096455;

TABLE 6 Si(100) Second higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ 7.809960834 4.249755245 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.30962963 0.302857143 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ 0 −0.800874586 b_(TS) ⁽²⁾ 0 0 c_(TS) 0 0.150714286 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 0 0 a_(TE) ⁽¹⁾ −3.563479635 9.07053135 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0 0 c_(TE) 0.148518519 0.353571429 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ −0.000160979 0 a_(ψSi) ⁽²⁾ −0.000757552 0.001332545 a_(ψSi) ⁽¹⁾ 0.095765615 0.003836714 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 384.7407407 0 b_(ψSi) ⁽²⁾ 278.2222222 285.0956633 c_(ψSi) 21.33333333 20.89285714 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.043185248 0.033521037 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −50 −50.92857143 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) −0.383208698 −0.220029295 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) 0 0.974573109 d_(TEψSi) 0 0 d_(TEθLT) 1.01389349 −1.078939399 d_(ψSiθLT) 0 0.002899732 e −5.569590226 −5.29442278;

TABLE 7 Si(100) Second higher-order mode 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −11.51287 −11.51287 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.136328125 0.136328125 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ 6.022608826 6.022608826 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.305859375 0.305859375 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ −180.607873 −180.607873 a_(TE) ⁽²⁾ −1.347493816 −1.347493816 a_(TE) ⁽¹⁾ 4.841204365 4.841204365 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ −0.000227051 −0.000227051 b_(TE) ⁽²⁾ 0.019179688 0.019179688 c_(TE) 0.25625 0.25625 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ −0.001342794 −0.001342794 a_(ψSi) ⁽¹⁾ 0.25625 0.25625 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 275.7568359 275.7568359 c_(ψSi) 0.25625 0.25625 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.153688205 0.153688205 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −49.140625 −49.140625 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) 0 0 d_(TLTθLT) −1.180623763 −1.180623763 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) 0 0 d_(TEψSi) 0 0 d_(TEθLT) 0.41394071 0.41394071 d_(ψSiθLT) 0.003203013 0.003203013 e −4.433641408 −4.433641408;

TABLE 8 Si(100) Second higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 119.666412 118.2359738 a_(TLT) ⁽¹⁾ 4.447768142 2.271979446 b_(TLT) ⁽²⁾ 0.006371047 0.00699901 c_(TLT) 0.31147541 0.30631068 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ 0 −3.805216895 b_(TS) ⁽²⁾ 0 0 c_(TS) 0 0.298543689 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 117.8354557 121.7109482 a_(TE) ⁽¹⁾ 2.107193686 −0.578851453 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0.006775956 0.006610661 c_(TE) 0.15 0.35631068 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ −0.001658706 0 a_(ψSi) ⁽¹⁾ 0.005677734 0.003834195 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 272.5477022 0 c_(ψSi) 20.90163934 20.02427184 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.051921544 0.050011808 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −48.36065574 −48.93203883 d_(TLTTS) 0 0 d_(TLTTE) 61.26575286 0 d_(TLTψSi) 0 0 d_(TLTθLT) 0 0 d_(TSTE) 0 −82.22932804 d_(TSψSi) 0 0 d_(TSθLT) 0 −0.470524678 d_(TEψSi) 0 0 d_(TEθLT) 0.904198722 −0.776132158 d_(ψSiθLT) 0.003410501 0.003906326 e −5.339814906 −5.463687811;

TABLE 9 Si(100) Third higher-order mode 0 < T_(LT) < 0.2 0 ≤ T_(S) < 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −16.39135605 −16.39135605 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.196774194 0.196774194 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −4.824831305 −4.824831305 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.170967742 0.170967742 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ −45.57608817 −45.57608817 a_(TE) ⁽¹⁾ −10.80005563 −10.80005563 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0.018296046 0.018296046 c_(TE) 0.303225806 0.303225806 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0.000172048 0.000172048 a_(ψSi) ⁽²⁾ −0.00384923 −0.00384923 a_(ψSi) ⁽¹⁾ −0.009826773 −0.009826773 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 143.0843208 143.0843208 b_(ψSi) ⁽²⁾ 215.8688866 215.8688866 c_(ψSi) 22.25806452 22.25806452 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.066799879 0.066799879 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −50.16129032 −50.16129032 d_(TLTTS) 0 0 d_(TLTTE) −112.847682 −112.847682 d_(TLTψSi) 0 0 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) −1.750763196 −1.750763196 d_(TSθLT) 0 0 d_(TEψSi) 0 0 d_(TEθLT) 0.466692151 0.466692151 d_(ψSiθLT) 0 0 e −2.904746788 −2.904746788;

TABLE 10 Si(100) Third higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −8.135537689 −8.135537689 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.311659193 0.311659193 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −20.38200282 −20.38200282 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.149327354 0.149327354 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 0 0 a_(TE) ⁽¹⁾ −3.460675692 −3.460675692 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0 0 c_(TE) 0.267488789 0.267488789 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ −0.003759233 −0.003759233 a_(ψSi) ⁽¹⁾ 0.015931998 0.015931998 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 239.0395946 239.0395946 c_(ψSi) 18.90134529 18.90134529 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.017576249 0.017576249 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −49.9103139 −49.9103139 d_(TLTTS) −152.1817236 −152.1817236 d_(TLTTE) 0 0 d_(TLTψSi) −0.359387178 −0.359387178 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) 0.911415415 0.911415415 d_(TEψSi) 0 0 d_(TEθLT) 0.275815872 0.275815872 d_(ψSiθLT) 0 0 e −3.952626598 −3.952626598;

TABLE 11 Si(100) Third higher-order mode 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −26.36951471 −26.36951471 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.161538462 0.161538462 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −10.09828536 −10.09828536 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.321025641 0.321025641 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ −21.38297597 −21.38297597 a_(TE) ⁽¹⁾ −2.383287449 −2.383287449 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0.01947666 0.01947666 c_(TE) 0.270512821 0.270512821 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0.000176024 0.000176024 a_(ψSi) ⁽²⁾ −0.001397911 −0.001397911 a_(ψSi) ⁽¹⁾ −0.107515297 −0.107515297 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ −282.3623122 −282.3623122 b_(ψSi) ⁽²⁾ 255.2071006 255.2071006 c_(ψSi) 23.84615385 23.84615385 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.085112984 0.085112984 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −48.97435897 −48.97435897 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) −0.816828716 −0.816828716 d_(TLTθLT) 0.865519967 0.865519967 d_(TSTE) 0 0 d_(TSψSi) −0.538336559 −0.538338559 d_(TSθLT) 0 0 d_(TEψSi) 0 0 d_(TEθLT) 0 0 d_(ψSiθLT) 0.002971652 0.002971652 e −3.504362202 −3.504362202;

TABLE 12 Si(100) Third higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −6.371850196 −6.371850196 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.292192192 0.292192192 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −0.609606885 −0.609606885 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.2996997 0.2996997 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 0 0 a_(TE) ⁽¹⁾ 0 0 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0 0 c_(TE) 0 0 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0.000224133 0.000224133 a_(ψSi) ⁽²⁾ −0.004048532 −0.004048532 a_(ψSi) ⁽¹⁾ −0.126847922 −0.126847922 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 1375.85979 1375.85979 b_(ψSi) ⁽²⁾ 281.2555799 281.2555799 c_(ψSi) 19.77477477 19.77477477 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.056146223 0.056146223 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −49.48948949 −49.48948949 d_(TLTTS) 94.47145497 94.47145497 d_(TLTTE) 0 0 d_(TLTψSi) 0 0 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) −0.568942451 −0.568942451 d_(TEψSi) 0 0 d_(TEθLT) 0 0 d_(ψSiθLT) 0.005654813 0.005654813 e −4.940340284 −4.940340284;

TABLE 13 Si(110) First higher-order mode 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −16.69742899 −16.69742899 −33.56520202 0 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.1675 0.1675 0.192857143 0 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 15.90196012 15.90196012 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.1525 0.1525 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 26.3030303 0 a_(TE) ⁽¹⁾ 0 0 −6.181053391 0 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0.006326531 0 c_(TE) 0 0 0.378571429 0 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ −0.000183963 −0.000183963 0 −0.000177142 a_(ψSi) ⁽²⁾ −0.003236307 −0.003236307 0 0.002186084 a_(ψSi) ⁽¹⁾ 0.071460688 0.071460688 0.085067773 0.13561432 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ −5768.71875 −5768.71875 0 2642.857143 b_(ψSi) ⁽²⁾ 399.9375 399.9375 0 500 c_(ψSi) 65.25 65.25 34.28571429 55 a_(θLT) ⁽²⁾ 0 0 0 −0.005336622 a_(θLT) ⁽¹⁾ 0 0 0.070255628 0.032718563 b_(θLT) ⁽²⁾ 0 0 0 65.75963719 c_(θLT) −90 −90 −51.42857143 −50.95238095 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 1.873870705 1.873870705 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0.716151515 0 d_(ψSiθLT) 0 0 −0.00729303 0.002110378 e −0.957101918 −0.957101918 −1.634922542 −1.290881853;

TABLE 14 Si(110) First higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −23.96596978 −4.695531045 −7.344438725 −5.603099398 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.34 0.3296875 0.338983051 0.306666667 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −23.18485905 0 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.175555556 0 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 −43.48595551 −70.50554427 −41.95412638 a_(TE) ⁽¹⁾ 0 −2.467954545 −5.460437635 −2.19025056 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0.006875 0.006716461 0.006819556 c_(TE) 0 0.15 0.365254237 0.360666667 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0.000119479 −0.000172812 a_(ψSi) ⁽²⁾ 0.018474062 0 0.003987724 0.002213009 a_(ψSi) ⁽¹⁾ 0.059131688 0 −0.047908658 0.073831446 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 −2384.203107 1647.952 b_(ψSi) ⁽²⁾ 81.55555556 0 216.791152 242.24 c_(ψSi) 35.33333333 0 30.76271186 62.6 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.009475371 0 0.026725166 0 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.33333333 −90 −49.83050847 −90 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 42.3018696 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0.617240199 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 2.612107038 0 0 0 d_(TSθLT) 2.129359248 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0.871101002 0 0 0 e −2.851861362 −2.210765625 −2.573237288 −2.440604203;

TABLE 15 Si(110) First higher-order mode 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −10.87353735 −17.74612134 −16.74814911 −16.74814911 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.167045455 0.158227848 0.168032787 0.168032787 a_(TS) ⁽²⁾ 92.14417413 275.6432031 0 0 a_(TS) ⁽¹⁾ −6.141913324 −0.713377524 −9.071522271 −9.071522271 b_(TS) ⁽²⁾ 0.004213585 0.004749239 0 0 c_(TS) 0.339772727 0.317721519 0.314754098 0.314754098 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ −37.82699975 0 0 0 a_(TE) ⁽¹⁾ 4.315324766 3.259148162 −5.270739047 −5.270739047 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.007147469 0 0 0 c_(TE) 0.153409091 0.138607595 0.356557377 0.356557377 a_(ψSi) ⁽⁶⁾ 0 0 −3.73552E−09 −3.73552E−09 a_(ψSi) ⁽⁵⁾ 0 0 −4.69013E−08 −4.69013E−08 a_(ψSi) ⁽⁴⁾ 0 0 1.07773E−05 1.07773E−05 a_(ψSi) ⁽³⁾ 0.000254041 −0.000266841 5.64997E−05 5.64997E−05 a_(ψSi) ⁽²⁾ 0.00704637 0.003350583 −0.007526984 −0.007526984 a_(ψSi) ⁽¹⁾ −0.123432463 0.05687546 −0.035719404 −0.035719404 b_(ψSi) ⁽⁶⁾ 0 0 1801696668 1801696668 b_(ψSi) ⁽⁵⁾ 0 0 6726299.443 6726299.443 b_(ψSi) ⁽⁴⁾ 0 0 1035415.498 1035415.498 b_(ψSi) ⁽³⁾ −1197.310014 2539.305207 3573.665857 3573.665857 b_(ψSi) ⁽²⁾ 188.2457386 286.0358917 720.1088417 720.1088417 c_(ψSi) 28.125 63.60759494 48.19672131 48.19672131 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.046748629 0.00460971 0 0 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −51.59090909 −50.75949367 −90 −90 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 105.3055279 0 0 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 58.63016883 0 0 0 d_(TSψSi) 0.443510572 0.274149566 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0.293912516 −0.280924747 0 0 d_(TEθLT) 0 0.457718571 0 0 d_(ψSiθLT) 0 −0.005165328 0 0 e −1.722804167 −2.484892701 −2.976959016 −2.976959016;

TABLE 16 Si(110) First higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 39.48011293 a_(TLT) ⁽¹⁾ −5.239160454 −5.820942031 −4.867344296 −2.496300587 b_(TLT) ⁽²⁾ 0 0 0 0.00654321 c_(TLT) 0.309375 0.302702703 0.286363636 0.288888889 a_(TS) ⁽²⁾ 24.40391167 40.38499201 0 40.45660337 a_(TS) ⁽¹⁾ −2.128595361 −6.73354721 −3.626479228 −6.290401812 b_(TS) ⁽²⁾ 0.006013184 0.005624543 0 0.005617234 c_(TS) 0.3265625 0.275675676 0.31 0.272222222 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 −51.46488975 0 0 a_(TE) ⁽¹⁾ −1.921891837 −0.509929613 −1.508039016 −0.870147512 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0.006479182 0 0 c_(TE) 0.153125 0.147297297 0.341818182 0.351388889 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 −0.000165117 0 −9.55404E−05 a_(ψSi) ⁽²⁾ 0.000936051 0.00475603 0 0.002198207 a_(ψSi) ⁽¹⁾ −0.02141106 0.040196571 −0.017752634 0.036260775 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 2115.829763 0 1531.394676 b_(ψSi) ⁽²⁾ 246.9177246 196.5668371 0 199.8263889 c_(ψSi) 24.140625 57.97297297 21.13636364 60.41666667 a_(θLT) ⁽²⁾ 0 0 0 −0.003220943 a_(θLT) ⁽¹⁾ 0.023743346 0.023741003 0.038368027 0.005042496 b_(θLT) ⁽²⁾ 0 0 0 72.22222222 c_(θLT) −50.078125 −48.51351351 −50.81818182 −50 d_(TLTTS) 0 0 0 −43.45862557 d_(TLTTE) −35.16960363 −48.00382984 23.6423037 52.46703277 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0.234382842 0 0 −0.273892853 d_(ψSiθLT) 0 −0.00130658 −0.001221935 0 e −2.175330984 −2.239116787 −2.271294054 −2.496300587;

TABLE 17 Si(110) Second higher-order mode 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −7.587457615 −7.587457615 −7.587457615 −7.587457615 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.174380165 0.174380165 0.174380165 0.174380165 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −3.979714537 −3.979714537 −3.979714537 −3.979714537 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.150413223 0.150413223 0.150413223 0.150413223 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ −0.865040993 −0.865040993 −0.865040993 −0.865040993 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.245867769 0.245867769 0.245867769 0.245867769 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 5.87537E−07 5.87537E−07 5.87537E−07 5.87537E−07 a_(ψSi) ⁽³⁾ −8.59015E−07 −8.59015E−07 −8.59015E−07 −8.59015E−07 a_(ψSi) ⁽²⁾ −0.001948222 −0.001948222 −0.001948222 −0.001948222 a_(ψSi) ⁽¹⁾ −0.027558032 −0.027558032 −0.027558032 −0.027558032 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 1129197.497 1129197.497 1129197.497 1129197.497 b_(ψSi) ⁽³⁾ −1524.372996 −1524.372996 −1524.372996 −1524.372996 b_(ψSi) ⁽²⁾ 776.3813947 776.3813947 776.3813947 776.3813947 c_(ψSi) 41.52892562 41.52892562 41.52892562 41.52892562 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.018744549 0.018744549 0.018744549 0.018744549 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.25619835 −49.25619835 −49.25619835 −49.25619835 d_(TLTTS) 140.6234074 140.6234074 140.6234074 140.6234074 d_(TLTTE) −25.20654793 −25.20654793 −25.20654793 −25.20654793 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0 0 0 e −1.789519626 −1.789519626 −1.789519626 −1.789519626;

TABLE 18 Si(110) Second higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 39.68139696 39.68139696 a_(TLT) ⁽¹⁾ −3.912934705 −3.912934705 −3.801935963 −3.801935963 b_(TLT) ⁽²⁾ 0 0 0.00692398 0.00692398 c_(TLT) 0.306451613 0.306451613 0.297857143 0.297857143 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0 0 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0 0 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ 1.912614784 1.91264784 −6.089810932 −6.089810932 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.148924731 0.148924731 0.347857143 0.347857143 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 8.78847E−06 8.78847E−06 a_(ψSi) ⁽²⁾ −0.0004718 −0.0004718 −0.000160567 −0.000160567 a_(ψSi) ⁽¹⁾ 0.003265633 0.003265633 −0.023574651 −0.023574651 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 2351.597668 2351.597668 b_(ψSi) ⁽²⁾ 847.4765869 847.4765869 880.2091837 880.2091837 c_(ψSi) 35.32258065 36.32258065 43.07142857 43.07142857 a_(θLT) ⁽²⁾ 0.005014741 0.005014741 0 0 a_(θLT) ⁽¹⁾ 0.023115164 0.023115164 0.030121011 0.030121011 b_(θLT) ⁽²⁾ 67.0626662 67.0626662 0 0 c_(θLT) −49.62365591 −49.62365591 −51.28571429 −51.28571429 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0 0 0.125572529 0.125572529 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0.563162206 0.563162206 −0.417002414 −0.417002414 d_(ψSiθLT) 0 0 0 0 e −2.002512986 −2.002512986 −2.550158637 −2.550158637;

TABLE 19 Si(110) Second higher-order mode 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ 2.992014692 2.992014692 −1.461725087 −1.461725087 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.156390977 0.156390977 0.155345912 0.155345912 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −9.089925228 −9.089925228 −1.247751383 −1.247751383 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.305263158 0.305263158 0.327672956 0.327672956 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 −130.6388144 −130.6388144 a_(TE) ⁽¹⁾ 5.773590917 5.773590917 −0.010504162 −0.010504162 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0.006662711 0.006662711 c_(TE) 0.166541353 0.166541353 0.341823899 0.341823899 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 1.03604E−05 1.03604E−05 a_(ψSi) ⁽²⁾ −0.000377109 −0.000377109 −0.000138558 −0.000138558 a_(ψSi) ⁽¹⁾ −0.013702515 −0.013702515 −0.028102653 −0.028102653 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 3096.349671 3096.349671 b_(ψSi) ⁽²⁾ 792.2381141 792.2381141 957.6361695 957.6361695 c_(ψSi) 41.39097744 41.39097744 43.20754717 43.20754717 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.015804666 0.015804666 0.028892246 0.028892246 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.32330827 −49.32330827 −49.62264151 −49.62264151 d_(TLTTS) 0 0 −44.5976835 −44.5976835 d_(TLTTE) 80.90186655 80.90186655 −150.2428298 −150.2428298 d_(TLTψSi) 0 0 0.225109644 0.225109644 d_(TLTθLT) 0 0 0 0 d_(TSTE) 29.68261053 29.68261053 47.35851038 47.35851038 d_(TSψSi) 0.136750854 0.136750854 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) −0.146211814 −0.146211814 0 0 d_(TEθLT) 0.41229257 0.41229257 0 0 d_(ψSiθLT) 0 0 0 0 e −2.596813807 −2.596813807 −2.049341112 −2.049341112;

TABLE 20 Si(110) Second higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −2.80791074 −2.80791074 0 0 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.3069869 0.3069869 0 0 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −5.618098986 −5.618098986 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.286462882 0.286462882 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 −73.23839461 −73.23839461 a_(TE) ⁽¹⁾ 8.962154821 8.962154821 −5.710295136 −5.710295136 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0.007310763 0.007310763 c_(TE) 0.167467249 0.167467249 0.330930233 0.330930233 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0 a_(ψSi) ⁽¹⁾ 0.003677309 0.003677309 0 0 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 0 c_(ψSi) 40.93886463 40.93886463 0 0 a_(θLT) ⁽²⁾ 0.00527863 0.00527863 0 0 a_(θLT) ⁽¹⁾ 0.008431458 0.008431458 0 0 b_(θLT) ⁽²⁾ 66.00179249 66.00179249 0 0 c_(θLT) −50.61135371 −50.61135371 −90 −90 d_(TLTTS) 63.6265441 63.6265441 0 0 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 57.20229582 57.20229582 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) −0.098212695 −0.098212695 0 0 d_(TEθLT) 0.32576925 0.32576925 0 0 d_(ψSiθLT) 0 0 0 0 e −2.431352404 −2.431352404 −2.39032093 −2.39032093;

TABLE 21 Si(110) Third higher-order mode 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −11.04825287 −11.04825287 −11.04825287 −11.04825287 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.164705882 0.164705882 0.164705882 0.164705882 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0 0 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0 0 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ −12.86806521 −12.86806521 −12.86806521 −12.86806521 a_(TE) ⁽¹⁾ 39.88235294 39.88235294 39.88235294 39.88235294 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.019258131 0.019258131 0.019258131 0.019258131 c_(TE) 0.286470588 0.286470588 0.286470588 0.286470588 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ −0.000762445 −0.000762445 −0.000762445 −0.000762445 a_(ψSi) ⁽¹⁾ −0.031584918 −0.031584918 −0.031584918 −0.031584918 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 749.7716263 749.7716263 749.7716263 749.7716263 c_(ψSi) 52.58823529 52.58823529 52.58823529 52.58823529 a_(θLT) ⁽²⁾ −0.004115091 −0.004115091 −0.004115091 −0.004115091 a_(θLT) ⁽¹⁾ 0.023260981 0.023260981 0.023260981 0.023260981 b_(θLT) ⁽²⁾ 81.16262976 81.16262976 81.16262976 81.16262976 c_(θLT) −50.11764706 −50.11764706 −50.11764706 −50.11764706 d_(TLTTS) 0 0 0 0 d_(TLTTE) −32.35244505 −32.35244505 −32.35244505 −32.35244505 d_(TLTψSi) 0.348515389 0.348515389 0.348515389 0.348515389 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0.000823202 0.000823202 0.000823202 0.000823202 e −1.678155024 −1.678155024 −1.678155024 −1.678155024;

TABLE 22 Si(110) Third higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 34.01092867 34.01092867 a_(TLT) ⁽¹⁾ −3.294448859 −3.294448859 −2.996122319 −2.996122319 b_(TLT) ⁽²⁾ 0 0 0.005572031 0.005572031 c_(TLT) 0.328378378 0.328378378 0.31344086 0.31344086 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 2.752851676 2.752851676 −1.564359965 −1.564359965 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.162837838 0.162837838 0.160752688 0.160752688 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ −4.548790211 −4.548790211 −1.370514553 −1.370514553 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.165540541 0.165540541 0.355913978 0.355913978 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ −7.03888E−08 −7.03888E−08 −3.78178E−08 −3.78178E−08 a_(ψSi) ⁽⁴⁾  1.4265E−06  1.4265E−06 9.79065E−07 9.79065E−07 a_(ψSi) ⁽³⁾ 0.000180358 0.000180358 9.73597E−05 9.73597E−05 a_(ψSi) ⁽²⁾ −0.002681874 −0.002681874 −0.00192926 −0.00192926 a_(ψSi) ⁽¹⁾ −0.092266284 −0.092266284 −0.04329175 −0.04329175 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 11701030.08 11701030.08 24265475.25 24265475.25 b_(ψSi) ⁽⁴⁾ 1439156.296 1439156.296 1705613.393 1705613.393 b_(ψSi) ⁽³⁾ 1798.436559 1798.436559 6938.899332 6938.899332 b_(ψSi) ⁽²⁾ 930.5183985 930.5183985 1060.880593 1060.880593 c_(ψSi) 40.23648649 40.23648649 40.08064516 40.08064516 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.046000242 0.046000242 0.001380272 0.001380272 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.52702703 −49.52702703 −50.05376344 −50.05376344 d_(TLTTS) −136.9978702 −136.9978702 −73.06084164 −73.06084164 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0 0 0.096651605 0.096651605 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 −56.78924979 −56.78924979 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0.081014811 0.081014811 0 0 d_(TEθLT) 0 0 −0.194432704 −0.194432704 d_(ψSiθLT) 0 0 0.000875955 0.000875955 e −2.543790382 −2.543790382 −2.964933907 −2.964933907;

TABLE 23 Si(110) Third higher-order mode 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −13.1565646 −13.1565646 −13.1565646 −13.1565646 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.179661017 0.179661017 0.179661017 0.179661017 a_(TS) ⁽²⁾ −54.97015257 −54.97015257 −54.97015257 −54.97015257 a_(TS) ⁽¹⁾ 1.195559996 1.195559996 1.195559996 1.195559996 b_(TS) ⁽²⁾ 0.006496856 0.006496856 0.006496856 0.006496856 c_(TS) 0.299435028 0.299435028 0.299435028 0.299435028 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ −12.83875925 −12.83875925 −12.83875925 −12.83875925 a_(TE) ⁽¹⁾ −2.591177902 −2.591177902 −2.591177902 −2.591177902 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.02062115 0.02062115 0.02062115 0.02062115 c_(TE) 0.282768362 0.282768362 0.282768362 0.282768362 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ −0.00094978 −0.00094978 −0.00094978 −0.00094978 a_(ψSi) ⁽¹⁾ −0.016861509 −0.016861509 −0.016861509 −0.016861509 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ −0.00094978 −0.00094978 −0.00094978 −0.00094978 c_(ψSi) 44.83050847 44.83050847 44.83050847 44.83050847 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.020120147 0.020120147 0.020120147 0.020120147 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −50.50847458 −50.50847458 −50.50847458 −50.50847458 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0.250474306 0.250474306 0.250474306 0.250474306 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0.031071552 0.031071552 0.031071552 0.031071552 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0 0 0 e −1.687640015 −1.687640015 −1.687640015 −1.687640015;

TABLE 24 Si(110) Third higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −8.387315737 −8.387315737 −11.34973266 −6.017883428 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.313377926 0.313377926 0.291082803 0.294578313 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0.140898252 0.140898252 3.107378473 2.287606243 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.299331104 0.299331104 0.277707006 0.296385542 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ −1.209727849 −1.209727849 −4.259242642 −1.280235687 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.152006689 0.152006689 0.343630573 0.351204819 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ −2.33027E−08 −2.33027E−08 0 0 a_(ψSi) ⁽⁴⁾ 7.78115E−07 7.78115E−07 0 0 a_(ψSi) ⁽³⁾ 5.59108E−05 5.59108E−05 −0.000194818 0 a_(ψSi) ⁽²⁾ −0.002410767 −0.002410767 0.000247924 0 a_(ψSi) ⁽¹⁾ −0.027662563 −0.027662563 0.12904143 −0.026766472 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 2083705.649 2083705.649 0 0 b_(ψSi) ⁽⁴⁾ 1386257.115 1386257.115 0 0 b_(ψSi) ⁽³⁾ −1267.413434 −1267.413434 1811.750092 0 b_(ψSi) ⁽²⁾ 895.5856198 895.5856198 293.105197 0 c_(ψSi) 42.14046823 42.14046823 19.39490446 67.95180723 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.020067585 0.020067585 −0.011988832 0.032566601 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.73244147 −49.73244147 −49.61783439 −50.96385542 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 41.29194486 d_(TLTψSi) 0 0 −0.203585177 0.376861254 d_(TLTθLT) 0 0 −0.273779971 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 −0.20937463 d_(TSθLT) −0.349110894 −0.349110894 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) −0.216865482 −0.216865482 0 0 d_(ψSiθLT) 0 0 0.00120304 0 e −2.390757235 −2.390757235 −2.548464154 −2.523994879;

TABLE 25 Si(111) First higher-order mode 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ 16.07631847 20.22733656 30.72650306 27.83979251 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.145833333 0.1625 0.159574468 0.158695652 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 17.08812597 27.84866827 31.28009383 12.67453621 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.154166667 0.172916667 0.161702128 0.163043478 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ −96.15629371 0 138.3065683 0 a_(TE) ⁽¹⁾ −1.263589744 2.833915191 −9.345807167 −7.807789594 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.006649306 0 0.006229063 0 c_(TE) 0.170833333 0.14375 0.369148936 0.345652174 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 −0.006862727 a_(ψSi) ⁽¹⁾ −0.101535567 −0.012511908 −0.101466433 0.176438509 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 114.9456522 c_(ψSi) 24.375 44.375 22.0212766 37.5 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0 0 0 0 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −90 −90 −90 −90 d_(TLTTS) −477.9162005 −760.9473336 −1054.386561 −1044.340968 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0 1.332405924 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 −250.1524613 102.33575 105.8611165 d_(TSψSi) 0 0 0 −2.093429604 d_(TSθLT) 0 0 0 0 d_(TEψSi) −0.613440559 0 1.201832187 −0.525734733 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0 0 0 e −0.553295028 −1.074792989 −1.290770348 −1.165057152;

TABLE 26 Si(111) First higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ −262.3995984 −262.3995984 0 0 a_(TLT) ⁽¹⁾ −59.70400634 −59.70400634 −18.45032018 −20.44479246 b_(TLT) ⁽²⁾ 0.004691358 0.004691358 0 0 c_(TLT) 0.355555556 0.355555556 0.332352941 0.331914894 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −73.33869606 −73.33869606 −9.963926388 −24.5747574 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.185185185 0.185185185 0.166176471 0.165957447 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ −19.84024877 −19.84024877 −8.905455835 −17.17093947 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.157407407 0.157407407 0.369117647 0.373404255 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ −4.69771E−05 −4.69771E−05 0 0 a_(ψSi) ⁽³⁾ −0.000362538 −0.000362538 0 0 a_(ψSi) ⁽²⁾ 0.055133453 0.055133453 −0.004320224 0.021125116 a_(ψSi) ⁽¹⁾ 0.020862911 0.020862911 −0.110606012 −0.064218508 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 138552.1512 138552.1512 0 0 b_(ψSi) ⁽³⁾ −78.36076818 −78.36076818 0 0 b_(ψSi) ⁽²⁾ 203.1635802 203.1636802 145.9775087 66.20642825 c_(ψSi) 33.05555556 33.05555556 19.41176471 34.46808511 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ −0.079155699 −0.079155699 0 0.057672719 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.81481481 −49.81481481 −90 −49.14893617 d_(TLTTS) 0 0 0 0 d_(TLTTE) −254.5809235 −254.5809235 80.69948416 99.56817027 d_(TLTψSi) 2.260189055 2.260189055 0 0 d_(TLTθLT) −0.785540829 −0.785540829 0 0 d_(TSTE) −292.5762951 −292.5762951 0 0 d_(TSψSi) −5.914103654 −5.914103654 −1.139436429 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 1.75463008 1.75463008 0.660099875 −3.844659844 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0 0 0.006965097 e −1.304804416 −1.304804416 −2.734683251 −3.115044468;

TABLE 27 Si(111) First higher-order mode 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0.003649147 0 0 0 a_(TLT) ⁽¹⁾ −17.27824731 −24.3903101 −38.65647339 −21.91795924 b_(TLT) ⁽²⁾ 67.18624026 0 0 0 c_(TLT) 0.154098361 0.15631068 0.17 0.1575 a_(TS) ⁽²⁾ 84.63185118 0 148.7691928 140.0125491 a_(TS) ⁽¹⁾ −6.307527081 −32.68184816 5.38083251 −11.91949736 b_(TS) ⁽²⁾ 0.00446166 0 0.005012245 0.004623438 c_(TS) 0.352459016 0.345631068 0.331428571 0.33875 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ 2.909874306 8.840975559 −16.54803788 −0.024546617 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.135245902 0.148058252 0.372857143 0.33125 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0.006216698 0 0 a_(ψSi) ⁽¹⁾ −0.068574135 −0.018885558 −0.187578295 0.122573316 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 147.1439344 0 0 c_(ψSi) 22.62295082 43.10679612 22.71428571 39.1875 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.023219728 0.047846607 0.097088558 0.096327065 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −50.16393443 −50.38834951 −50.42857143 −51.25 d_(TLTTS) 0 −144.763071 0 0 d_(TLTTE) 0 0 −161.2345526 0 d_(TLTψSi) −0.827435588 0 0 1.107475984 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 103.0553675 −65.68497311 0 d_(TSψSi) 0 −1.329400713 0.82928215 −0.646921162 d_(TSθLT) 0 0 0 0 d_(TEψSi) −0.681669875 0.653050787 0.676734069 0.936807034 d_(TEθLT) 0 0 0.481989709 0.52746173 d_(ψSiθLT) 0 0 0 0 e −1.560056382 −2.656750279 −2.259351603 −1.805786084;

TABLE 28 Si(111) First higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 77.3065693 243.6937004 0 a_(TLT) ⁽¹⁾ −13.49335267 −9.878165228 −6.309863061 −12.90130633 b_(TLT) ⁽²⁾ 0 0.00674795 0.006522811 0 c_(TLT) 0.300961538 0.297350993 0.29858156 0.306818182 a_(TS) ⁽²⁾ 133.2691939 160.4037443 82.71737336 100.5491122 a_(TS) ⁽¹⁾ −9.215218873 −21.20902158 −9.283157312 −7.984268054 b_(TS) ⁽²⁾ 0.006618898 0.005353274 0.006382979 0.005704201 c_(TS) 0.314423077 0.303311258 0.3 0.311363636 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 90.39669198 0 0 a_(TE) ⁽¹⁾ 0.170720276 3.925569914 −15.08313602 −9.451928755 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0.006615499 0 0 c_(TE) 0.15 0.147350993 0.363475177 0.346212121 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ −0.00740803 0 0 0 a_(ψSi) ⁽¹⁾ −0.220502432 0.083594751 −0.104344279 0.088096624 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 135.4659763 0 0 0 c_(ψSi) 20.76923077 43.70860927 17.87234043 41.47727273 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ −0.017420386 −0.012240534 0 0 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −50.28846154 −50.26490066 −90 −90 d_(TLTTS) 149.298265 220.9283416 135.5319056 135.1493422 d_(TLTTE) 0 0 0 −65.38520659 d_(TLTψSi) 0 0 0 −0.663828772 d_(TLTθLT) −0.703824061 −0.739197646 0 0 d_(TSTE) 122.4270642 0 −94.62792088 0 d_(TSψSi) 0.714493384 −1.189155195 0 −1.017237669 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0.558597609 0 0 d_(TEθLT) 0.734424122 0.628956462 0 0 d_(ψSiθLT) −0.003900657 0.003268439 0 0 e −2.246432623 −2.691572945 −3.425676672 −3.236112132;

TABLE 29 Si(111) Second higher-order mode 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −26.67263869 −6.49243933 −20.61574251 −21.06290014 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.15443038 0.175438596 0.160759494 0.156896552 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −7.971316395 7.232224634 −16.40433051 −3.920556446 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.14556962 0.133333333 0.144303797 0.144827586 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 −110.7824708 −133.1826499 0 a_(TE) ⁽¹⁾ 12.77975858 −10.04988717 5.027045348 −5.686378626 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0.006463527 0.006582278 0 c_(TE) 0.151265823 0.144736842 0.35 0.35862069 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 −0.007219474 0 a_(ψSi) ⁽¹⁾ 0.028716852 0.04192074 −0.016815807 0.008780601 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 125.0280404 0 c_(ψSi) 9.683544304 50 11.58227848 48.10344828 a_(θLT) ⁽²⁾ 0.01035547 0 0 0.014789077 a_(θLT) ⁽¹⁾ 0.162093889 0.106646805 0.164306798 0.04587348 b_(θLT) ⁽²⁾ 61.8811088 0 0 55.43995244 c_(θLT) −49.62025316 −50.35087719 −51.01265823 −51.20689655 d_(TLTTS) −609.1883956 −724.6623011 −297.9828576 −203.214973 d_(TLTTE) −215.420422 0 159.6303697 0 d_(TLTψSi) 0 −3.771938969 2.003207828 −2.014745526 d_(TLTθLT) 1.80686724 0 2.218853872 0 d_(TSTE) 0 −307.4269587 0 0 d_(TSψSi) 0 0 −1.097992723 0 d_(TSθLT) 1.985202008 0 2.104127874 0 d_(TEψSi) 0 0 −1.451355926 0 d_(TEθLT) −203.386471 1.145649707 0 0 d_(ψSiθLT) 2.42647485 0.004357557 0 0 e −5.019952207 −2.13826109 −3.235663805 −3.326865691;

TABLE 30 Si(111) Second higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 45.51074293 −94.44342524 0 a_(TLT) ⁽¹⁾ 0.788515454 −3.454988617 −9.832405019 −3.192556866 b_(TLT) ⁽²⁾ 0 0.006485261 0.006459172 0 c_(TLT) 0.298058252 0.295238095 0.298461538 0.298913043 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −8.97795964 1.31344944 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.142718447 0.147619048 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ 9.791468713 0.170587985 −0.71523762 −10.72534968 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.15776699 0.124603175 0.356153846 0.347826087 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0.003924448 0.001661439 0 0.00657999 a_(ψSi) ⁽¹⁾ 0.15776699 −0.024952541 0.02404454 −0.067389114 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 148.4588557 132.0861678 0 152.6937618 c_(ψSi) 15.29126214 46.9047619 14.19230769 43.04347826 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.06700163 0.042141715 0.055240362 0.061747926 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −48.73786408 −50.15873016 −49.76923077 −49.45652174 d_(TLTTS) 116.7290786 −78.78450728 0 0 d_(TLTTE) 0 85.46351406 −49.85282875 0 d_(TLTψSi) −0.70199108 0.445481139 0 0.604657146 d_(TLTθLT) −0.726496636 0 0 0 d_(TSTE) 0 −116.360096 0 0 d_(TSψSi) 0 −0.622709588 0 0 d_(TSθLT) 2.041329502 −0.339115637 0 0 d_(TEψSi) 0 0.20688896 0 0 d_(TEθLT) 0.774150432 0.439880407 −0.6608739 −1.068569294 d_(ψSiθLT) −0.005400114 0.002667922 −0.004937546 0.006290209 e −4.209434885 −1.791078273 −3.48174155 −3.934527612;

TABLE 31 Si(111) Second higher-order mode 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −4.673850215 0 −8.8586067 −1.957300157 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.141509434 0 0.153125 0.16 a_(TS) ⁽²⁾ 82.42811022 0 87.42203531 0 a_(TS) ⁽¹⁾ −7.905282467 −4.948155925 −0.569845134 0.521030757 b_(TS) ⁽²⁾ 0.006949092 0 0.006037326 0 c_(TS) 0.294339623 0.314583333 0.297916667 0.285 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 53.51232744 −79.38404758 0 0 a_(TE) ⁽¹⁾ 10.58973083 10.26534018 8.135327356 −7.251553825 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.006016376 0.005677083 0 0 c_(TE) 0.183962264 0.1375 0.336458333 0.37 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0.001429494 a_(ψSi) ⁽¹⁾ 0.010122468 0.039888924 −0.016592245 −0.004853684 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 145.6875 c_(ψSi) 11.88679245 48.4375 14.0625 45.75 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ −0.005093912 0.011098836 0.047530531 0.04750516 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −50 −50.41666667 −50.72916667 −49.75 d_(TLTTS) 0 0 91.19418307 251.5375225 d_(TLTTE) 0 0 −156.3654518 0 d_(TLTψSi) 0.322255595 0 0 −0.289820964 d_(TLTθLT) −0.768436344 0 −0.735737765 0 d_(TSTE) 0 75.51836907 0 0 d_(TSψSi) −0.512402643 0.300543357 −0.724013025 0.245746891 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 −0.50556971 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0.002842264 0 0 e −2.770026639 −2.638591885 −1.980941925 −2.412296494;

TABLE 32 Si(111) Second higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ 4.449764983 0 −13.78321665 −10.59163435 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.321052632 0 0.309146341 0.303164557 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0 −3.433673203 −1.746861763 3.363230821 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0 0.283443709 0.287804878 0.293037975 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 86.18383552 0 a_(TE) ⁽¹⁾ 3.853394073 8.768511808 −1.867550529 −15.68616064 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0.007157942 0 c_(TE) 0.181578947 0.135430464 0.356097561 0.363291139 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0 a_(ψSi) ⁽¹⁾ 0.014178515 0.049910217 −0.008697771 0.012742666 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 0 c_(ψSi) 12.63157895 45.99337748 15.09146341 45 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0 0.061867934 0.051566965 0.028929641 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −90 −50.59602649 −50.30487805 −50.56962025 d_(TLTTS) 0 0 0 −103.0440888 d_(TLTTE) 0 0 0 0 d_(TLTψSi) −0.181721459 0 0 0 d_(TLTθLT) 0 0 0 −0.608943868 d_(TSTE) 0 113.1914268 −75.04640382 −82.04954672 d_(TSψSi) 0 0 −0.554356722 0.673316097 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 −0.512800103 0 d_(TEθLT) 0 0 −0.656702553 0 d_(ψSiθLT) 0 0 0 0 e −2.401219798 −3.18651044 −3.93030224 −4.143483981;

TABLE 33 Si(111) Third higher-order mode 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −3.047618237 −3.047618237 −3.047618237 −3.047618237 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.160869565 0.160869565 0.160869665 0.160869565 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0 0 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0 0 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 11.21750437 11.21750437 11.21750437 11.21750437 a_(TE) ⁽²⁾ −3.666215654 −3.666215654 −3.666215654 −3.666215654 a_(TE) ⁽¹⁾ −0.035248162 −0.035248162 −0.035248162 −0.035248162 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0.000381688 0.000381688 0.000381688 0.000381688 b_(TE) ⁽²⁾ 0.012589792 0.012589792 0.012589792 0.012589792 c_(TE) 0.245652174 0.245652174 0.245652174 0.245652174 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0 a_(ψSi) ⁽¹⁾ −0.003582211 −0.003582211 −0.003582211 −0.003582211 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 0 c_(ψSi) 35.86956522 35.86956522 35.86956522 35.86956522 a_(θLT) ⁽²⁾ −0.000596775 −0.000596775 −0.000596775 −0.000596775 a_(θLT) ⁽¹⁾ 0.003385783 0.003385783 0.003385783 0.003385783 b_(θLT) ⁽²⁾ 77.88279773 77.88279773 77.88279773 77.88279773 c_(θLT) −47.82608696 −47.82608696 −47.82608696 −47.82608696 d_(TLTTS) 0 0 0 0 d_(TLTTE) −2.939323227 −2.939323227 −2.939323227 −2.939323227 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) −0.000442922 −0.000442922 −0.000442922 −0.000442922 e −0.277577227 −0.277577227 −0.277577227 −0.277577227;

TABLE 34 Si(111) Third higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ 0 0 0 0 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0 0 0 0 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 6.03484153 6.03484153 6.03484153 6.03484153 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.183333333 0.183333333 0.183333333 0.183333333 a_(TE) ⁽⁴⁾ −215.3850281 −215.3850281 −215.3850281 −215.3850281 a_(TE) ⁽³⁾ 54.12265846 54.12265846 54.12265846 54.12265846 a_(TE) ⁽²⁾ 0.942905209 0.942905209 0.942905209 0.942905209 a_(TE) ⁽¹⁾ −1.08045121 −1.08045121 −1.08045121 −1.08045121 b_(TE) ⁽⁴⁾ 0.000339332 0.000339332 0.000339332 0.000339332 b_(TE) ⁽³⁾ 0.000317558 0.000317558 0.000317558 0.000317558 b_(TE) ⁽²⁾ 0.011265432 0.011265432 0.011265432 0.011265432 c_(TE) 0.211111111 0.211111111 0.211111111 0.211111111 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0 a_(ψSi) ⁽¹⁾ −0.004526908 −0.004526908 −0.004526908 −0.004526908 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 0 c_(ψSi) 27.5 27.5 27.5 27.5 a_(θLT) ⁽²⁾ −0.00046365 −0.00046365 −0.00046365 −0.00046365 a_(θLT) ⁽¹⁾ 0.005349146 0.005349146 0.005349146 0.005349146 b_(θLT) ⁽²⁾ 57.09876543 57.09876543 57.09876543 57.09876543 c_(θLT) −46.11111111 −46.11111111 −46.11111111 −46.11111111 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 45.80413521 45.80413521 45.80413521 45.80413521 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) −0.071786246 −0.071786246 −0.071786246 −0.071786246 d_(ψSiθLT) −0.000425881 −0.000425881 −0.000425881 −0.000425881 e −0.446604617 −0.446604617 −0.446604617 −0.446604617;

TABLE 35 Si(111) Third higher-order mode 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −2.477108842 −2.477108842 −2.477108842 −2.477108842 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.137349398 0.137349398 0.137349398 0.137349398 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −0.488747927 −0.488747927 −0.488747927 −0.488747927 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.336144578 0.336144578 0.336144578 0.336144578 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ −1.973253274 −1.973253274 −1.973253274 −1.973253274 a_(TE) ⁽¹⁾ −0.124870592 −0.124870592 −0.124870592 −0.124870592 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.017915517 0.017915517 0.017915517 0.017915517 c_(TE) 0.256024096 0.256024096 0.256024096 0.256024096 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾  7.6083E−07  7.6083E−07  7.6083E−07  7.6083E−07 a_(ψSi) ⁽³⁾ 7.21121E−06 7.21121E−06 7.21121E−06 7.21121E−06 a_(ψSi) ⁽²⁾ −0.000857107 −0.000857107 −0.000857107 −0.000857107 a_(ψSi) ⁽¹⁾ −0.00490823 −0.00490823 −0.00490823 −0.00490823 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 105622.9088 105622.9088 105622.9088 105622.9088 b_(ψSi) ⁽³⁾ −217.2019476 −217.2019476 −217.2019476 −217.2019476 b_(ψSi) ⁽²⁾ 208.4409929 208.4409929 208.4409929 208.4409929 c_(ψSi) 30.54216867 30.54216867 30.54216867 30.54216867 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0 0 0 0 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −90 −90 −90 −90 d_(TLTTS) 4.821777856 4.821777856 4.821777856 4.821777856 d_(TLTTE) −4.14067246 −4.14067246 −4.14067246 −4.14067246 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0.024454063 0.024454063 0.024454063 0.024454063 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0 0 0 e −0.240178915 −0.240178915 −0.240178915 −0.240178915;

TABLE 36 Si(111) Third higher-order mode 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ 0 0 0 0 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0 0 0 0 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0.380779889 0.380779889 0.380779889 0.380779889 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.285294118 0.285294118 0.285294118 0.285294118 a_(TE) ⁽⁴⁾ −165.3225345 −165.3225345 −165.3225345 −165.3225345 a_(TE) ⁽³⁾ 23.65923214 23.65923214 23.65923214 23.65923214 a_(TE) ⁽²⁾ 2.256295059 2.256295059 2.256295059 2.256295059 a_(TE) ⁽¹⁾ −0.292409126 −0.292409126 −0.292409126 −0.292409126 b_(TE) ⁽⁴⁾ 0.00051583 0.00051583 0.00051583 0.00051583 b_(TE) ⁽³⁾ 0.00070344 0.00070344 0.00070344 0.00070344 b_(TE) ⁽²⁾ 0.015017301 0.015017301 0.015017301 0.015017301 c_(TE) 0.220588235 0.220588235 0.220588235 0.220588235 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0 a_(ψSi) ⁽¹⁾ −0.004846255 −0.004846255 −0.004846255 −0.004846255 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 0 c_(ψSi) 29.55882353 29.55882353 29.55882353 29.55882353 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.00165846 0.00165846 0.00165846 0.00165846 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −48.52941176 −48.52941176 −48.52941176 −48.52941176 d_(TLTTS) −0.04933649 −0.04933649 −0.04933649 −0.04933649 d_(TLTTE) −0.021023839 −0.021023839 −0.021023839 −0.021023839 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) −7.074776252 −7.074776252 −7.074776252 −7.074776252 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) −0.00049898 −0.00049898 −0.00049898 −0.00049898 e −0.3405485 −0.3405485 −0.3405485 −0.3405485.


2. The acoustic wave device according to claim 1, wherein I_(h) for each of the first and second higher-order modes is more than about −2.4.
 3. The acoustic wave device according to claim 1, wherein I_(h) for each of the first and third higher-order modes is more than about −2.4.
 4. The acoustic wave device according to claim 1, wherein I_(h) for each of the second and third higher-order modes is more than about −2.4.
 5. The acoustic wave device according to claim 1, wherein I_(h) for each of the first, second, and third higher-order modes is more than about −2.4.
 6. The acoustic wave device according to claim 1, wherein the piezoelectric body has a thickness of about 3.5λ or less.
 7. The acoustic wave device according to claim 6, wherein the piezoelectric body has a thickness of about 2.5λ or less.
 8. The acoustic wave device according to claim 6, wherein the piezoelectric body has a thickness of about 1.5λ or less.
 9. The acoustic wave device according to claim 6, wherein the piezoelectric body has a thickness of about 0.5λ or less.
 10. The acoustic wave device according to claim 1, wherein the acoustic wave device is an acoustic wave resonator.
 11. An acoustic wave filter, comprising: a plurality of resonators; wherein at least one of the plurality of resonators is defined by the acoustic wave device according to claim
 1. 12. The acoustic wave filter according to claim 11, wherein I_(h) for each of the first and second higher-order modes is more than about −2.4.
 13. The acoustic wave filter according to claim 11, wherein I_(h) for each of the first and third higher-order modes is more than about −2.4.
 14. The acoustic wave filter according to claim 11, wherein I_(h) for each of the second and third higher-order modes is more than about −2.4.
 15. The acoustic wave filter according to claim 11, wherein I_(h) for each of the first, second, and third higher-order modes is more than about −2.4.
 16. The acoustic wave filter according to claim 11, wherein the piezoelectric body has a thickness of about 3.5λ or less.
 17. A multiplexer, comprising: N acoustic wave filters, where N is 2 or more, having different pass bands; wherein one terminal of each of the N acoustic wave filters is commonly connected on an antenna terminal side; at least one acoustic wave filter among the N acoustic wave filters excluding an acoustic wave filter having a highest-frequency pass band includes a plurality of acoustic wave resonators; and at least one acoustic wave resonator among the plurality of acoustic wave resonators is defined by the acoustic wave device according to claim
 1. 18. The multiplexer according to claim 17, wherein the multiplexer is a composite filter device for carrier aggregation.
 19. A high-frequency front-end circuit, comprising: an acoustic wave filter including the acoustic wave device according to claim 1; and a power amplifier connected to the acoustic wave filter.
 20. A communication apparatus, comprising: a high-frequency front-end circuit including an acoustic wave filter that includes the acoustic wave device according to claim 1, and a power amplifier connected to the acoustic wave filter; and an RF signal processing circuit. 